Abstract:Single-walled carbon nanotube (SWNT) thin-film transistors hold great potential for flexible electronics. However, fabrication of air-stable n-type devices by methods compatible with standard photolithography on flexible substrates is challenging. Here, we demonstrated that by using a bilayer dielectric structure of MgO and atomic layer deposited (ALD) Al2O3 or HfO2, air-stable n-type devices can be obtained. The mechanism for conduction type conversion was elucidated and attributed to the hole depletion in SWNT, the decrease of the trap state density by MgO assimilating adsorbed water molecules in the vicinity of SWNT, and the energy band bending because of the positive fixed charges in the ALD layer. The key advantage of the method is the relatively low temperature (120 or 90 degrees C) required here for the ALD process because we need not employ this step to totally remove the absorbates on the SWNTs. This advantage facilitates the integration of both p-type and n-type transistors through a simple lift off process and compact CMOS inverters were demonstrated. We also demonstrated that the doping of SWNTs in the channel plays a more important role than the Schottky barriers at the metal contacts in carbon nanotube thin-film transistors, unlike the situation in individual SWNT-based transistors.

Thin Film Transistors Fabricated by in Situ Growth of SnO2 Nanobeltson Au∕Pt Electrodes

Synthesis of ZnO Nanowires for Thin Film Network Transistors

Magnetron-Sputtered SnO Thin Films for p-Type and Ambipolar TFT Applications

Individual Sno2 Nanowire Transistors Fabricated by the Gold Microwire Mask Method

Nanotube and Nanowire Transistors

Tunable Electrical Properties of NiO Thin Films and P-Type Thin-Film Transistors

Fabrication and Characterization of Thin-Film Transistors with Sno2 Channel by Spray Pyrolysis

Ultra Low-Voltage Electric Double-Layer Sno2 Nanowire Transistors Gated by Microporous Sio2-Based Solid Electrolyte

In-Plane-Gate Transparent $\hbox{sno}_{2}$ Nanowire Transistors

p-Type Field Effect Transistors Based on Schottky Junction Ag@SnO Nanostructures

Study Of Dc Sputtered Sno Growth And Its Applications In Thin Film Transistors

Low-Voltage Transparent Sno2 Nanowire Transistors Gated by Microporous Sio2 Solid-Electrolyte with Improved Polarization Response

High-Mobility Transparent Thin-Film Transistors with an Sb-Doped Sno2 Nanocrystal Channel Fabricated at Room Temperature

Electrical properties of a single Ni-contact SnO2 nanowire field-effect transistors

Influence of Post-Deposition Annealing on the Novel Alloyed SnSxO1-x Semiconductor in P-Type Thin-Film Transistors

Fully Transparent Thin-Film Transistor Devices Based on Sno2 Nanowires

Preparation and characterization of SnO films via reactive sputtering for ambipolar thin-film transistor applications

Oxygen Sensing Characteristics of Individual ZnO Nanowire Transistors

Low-Voltage Sno2 Nanowire Transistors Gated by Solution-Processed Chitosan-Based Proton Conductors

Compositional changes between metastable SnO and stable SnO 2 in a sputtered film for p-type thin-film transistors

Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics