Abstract:Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature. The devices with 230nm thick SiO2 gate insulating layers show excellent output current-voltage characteristics with early saturation voltages under 2 volts, constant saturation current and exceptionally low dependence of saturation voltage with the gate field. Operational principles of these devices are markedly different from traditional ohmic-contact field-effect transistors (FETs), and are explained using the source-gated transistor (SGT) concept in which the semiconductor under the reverse biased Schottky source barrier is depleted leading to low voltage pinch-off and saturation of drain current. Device parameters including activation energy are extracted at different temperatures and gate voltages to estimate the Schottky barrier height for different electrode materials to establish transistor performance - barrier height relationships. Numerical simulations are performed using 2D thin-film approximation of the device structures at various Schottky barrier heights. Without any adjustable parameters and only assuming low p-doping of the transistor channel, the modelled data show exceptionally good correlation with the measured data. From both experimental and simulation results, it is concluded that source-barrier controlled nanowire transistors have excellent potential advantages compared with a standard FET including mitigation of short-channel effects, insensitivity in device operating currents to device channel length variation, higher on/off ratios, higher gain, lower power consumption and higher operational speed for solution processable and printable nanowire electronics.

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ZnO Nanowire and $\hbox{ws}_{2}$ Nanotube Electronics

Thin Film Transistors Fabricated by in Situ Growth of SnO2 Nanobeltson Au∕Pt Electrodes

Electrical properties of a single Ni-contact SnO2 nanowire field-effect transistors

Transparent Metallic Sb-Doped Sno2 Nanowires

Ultraclean Individual Suspended Single-Walled Carbon Nanotube Field Effect Transistor

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ZnO Nanowire Network Transistors Based on a Self-Assembly Method

Orientational Self-Assembled Field-Effect Transistors Based on A Single-Walled Carbon Nanotube

Fabrication and Optoelectronic Characterization of Suspended In2O3 Nanowire Transistors

Si Nanowire - Array Source Gated Transistors

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Single-ZnO-Nanobelt-Based Single-Electron Transistors

A single SnO₂ nanowire-based microelectrode.

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Low-Voltage Transparent Sno2 Nanowire Transistors Gated by Microporous Sio2 Solid-Electrolyte with Improved Polarization Response

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