Abstract:This work includes a precise study of the mechanism of how in situ atomic layer deposition (ALD)‐stacked Al2O3 and SnO channel thin‐film transistors exhibit exceptionally low S‐value (0.15 V decade−1) and enhanced stability, which are related to the change occurring in the film. Also, using this improved p‐channel, an all‐ALD channel complementary metal–oxide–semiconductor, which has not been reported before, is fabricated. Tin monoxide (SnO) has been studied widely over the past several decades due to its promising theoretical p‐type performance. However, limited fabrication processes due to the low thermal and air stability of SnO have resulted in poor performance in thin‐film transistors (TFTs). Here, it is suggested that in situ atomic layer deposition (ALD) of an Al2O3 capping layer can improve the electrical performance in SnO TFTs. By adopting an in situ stacking process, which protects vulnerable SnO thin films from exposure to air and contamination, SnO exhibits enhanced crystallinity, electrical performance, and improved scaling limitation of channel thickness. Especially, in situ stacked Al2O3 on a 7 nm SnO TFT has an exceptionally low subthreshold swing (0.15 V decade−1), high on/off ratio (6.54 × 105), and reasonable mobility (1.14 cm2 V−1 s−1) while the bare SnO TFT is not activated. Computational thermodynamics such as chemical potential analysis, nucleation Gibbs free‐energy calculations, and various analytical techniques are used to reveal the origin of highly crystallized SnO formations via in situ deposition of Al2O3. Finally, state‐of‐the‐art all‐ALD‐channel complementary metal–oxide–semiconductor inverters using n‐type indium gallium zinc oxide and p‐type SnO TFTs are integrated, which exhibit a maximum voltage gain of 240 V V−1 and a noise margin of 89.3%.

Influence of Post-Deposition Annealing on the Novel Alloyed SnSxO1-x Semiconductor in P-Type Thin-Film Transistors

Magnetron-Sputtered SnO Thin Films for p-Type and Ambipolar TFT Applications

Highly Stable Atomic Layer Deposited Zinc Oxide Thin-Film Transistors Incorporating Triple O 2 Annealing

Preparation and characterization of SnO films via reactive sputtering for ambipolar thin-film transistor applications

Compositional changes between metastable SnO and stable SnO 2 in a sputtered film for p-type thin-film transistors

Enhancement of Two-Step Low-Temperature Annealing Treatment on Electrical Performance of In-Sn-O Thin-Film Transistors

Effects of Growth Temperature and Annealing on Properties of Zn3sn2o7 Thin Films and Application in Tfts

Effects of Annealing Process on Characteristics of Fully Transparent Zinc Tin Oxide Thin-Film Transistor

The Significance of an In Situ ALD Al2O3 Stacked Structure for p‐Type SnO TFT Performance and Monolithic All‐ALD‐Channel CMOS Inverter Applications

Effects of Sn Doping on the Electrical Performance and Stability of Sub-V Operating Metal-Oxide Thin-Film Transistors Fabricated by Oxygen Annealing

Effects of Post Annealing Atmosphere on Low-emission of SnO2: F Thin Films

Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited Zno-Channel/Al2o3-Dielectric

Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors

Highly Dense and Stable p-Type Thin-Film Transistor Based on Atomic Layer Deposition SnO Fabricated by Two-Step Crystallization

Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors

Effects of Annealing Conditions on Resistive Switching Characteristics of SnOx Thin Films

Defect Modification in Zninsno Transistor with Solution-Processed Al2o3 Dielectric by Annealing

Study Of Dc Sputtered Sno Growth And Its Applications In Thin Film Transistors

Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O2

Plasma-enhanced atomic layer deposition of Sn-doped indium oxide semiconductor nano-films for thin-film transistors

1‐2: High Performance of InSnO Thin‐Film Transistors Enabled by Anodization Techniques