Abstract:Ultrathin indium oxide (InOx) films (≤5 nm), which are grown by plasma-enhanced (PE) atomic layer deposition (ALD) with (C2H5)2InCH3 and O2 plasma, are explored as channels of thin-film transistors (TFTs). First, we investigate the effects of channel thickness ( ${T}_{\text{ch}}$ ), channel length ( ${L}_{\text{ch}}$ ), and post-annealing conditions on the performance of TFTs with HfO2 gate dielectrics, respectively. The results indicate that superior overall performance can be achieved for the device with 2.5 nm ${T}_{\text{ch}}$ , $2 ~\mu \text{m} {L}_{\text{ch}}$ , and 8.5 nm HfO2 gate dielectric after annealing at 325 °C for 180 s in O2. Increasing the post-annealing temperature to 350 °C degrades the TFTs because of crystallization of HfO2 and outdiffusion of In element. Furthermore, with a PE chemical vapor-deposited SiO2 passivation layer on the back of the channel, the performance of the TFTs is significantly improved after post-annealing, especially at 300 °C for 1 h in air, such as near-zero-threshold voltage, a very small subthreshold slope (SS) of 69 mV/dec, a very high On/Off current ratio of ~1010, and relatively high field effect mobility of 17 cm2/ $\text{V}\cdot \text{s}$ . Finally, the positive and negative gate bias stress (NGBS) measurements of the devices also indicate that the SiO2 passivation layer can improve remarkably the NGBS stability. Thus, such a kind of device could be very promising for low-voltage and low-power applications.

1‐2: High Performance of InSnO Thin‐Film Transistors Enabled by Anodization Techniques

Anodized ITO Thin‐Film Transistors

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Indium–Tin–Oxide Thin-Film Transistors with in Situ Anodized Ta 2 O 5 Passivation Layer

Fabrication of Indium-Tin-Oxide Thin-Film Transistor Using Anodization

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

High Performance (vth ~ 0 V, SS ~ 69 Mv/dec, IOn/IOff ~ 1010) Thin-Film Transistors Using Ultrathin Indium Oxide Channel and SiO2 Passivation

Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition

Low-Voltage a-InGaZnO Thin-Film Transistors With Anodized Thin HfO 2 Gate Dielectric

Enhancement of Two-Step Low-Temperature Annealing Treatment on Electrical Performance of In-Sn-O Thin-Film Transistors

Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Technique

High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate

High-Performance Thin-Film Transistors with ZnO/Al2O3 Superlattice Channel Fabricated by Atomic Layer Deposition

Homojunction In2O3-TFTs Prepared by Anodization Technique

P‐1.1: Co‐sputtering‐deposited Hf‐doped ITO Thin Films for Thin Film Transistors Application

High-performance nano-scale InSnO transistors

One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature

Effects of Source/Drain Electrodes on the Performance of InSnO Thin-Film Transistors

Improved Environmental Stability of InSnO Thin-Film Transistor by Interface Engineering