Abstract:Ultrathin indium oxide (InOx) films (≤5 nm), which are grown by plasma-enhanced (PE) atomic layer deposition (ALD) with (C2H5)2InCH3 and O2 plasma, are explored as channels of thin-film transistors (TFTs). First, we investigate the effects of channel thickness ( ${T}_{\text{ch}}$ ), channel length ( ${L}_{\text{ch}}$ ), and post-annealing conditions on the performance of TFTs with HfO2 gate dielectrics, respectively. The results indicate that superior overall performance can be achieved for the device with 2.5 nm ${T}_{\text{ch}}$ , $2 ~\mu \text{m} {L}_{\text{ch}}$ , and 8.5 nm HfO2 gate dielectric after annealing at 325 °C for 180 s in O2. Increasing the post-annealing temperature to 350 °C degrades the TFTs because of crystallization of HfO2 and outdiffusion of In element. Furthermore, with a PE chemical vapor-deposited SiO2 passivation layer on the back of the channel, the performance of the TFTs is significantly improved after post-annealing, especially at 300 °C for 1 h in air, such as near-zero-threshold voltage, a very small subthreshold slope (SS) of 69 mV/dec, a very high On/Off current ratio of ~1010, and relatively high field effect mobility of 17 cm2/ $\text{V}\cdot \text{s}$ . Finally, the positive and negative gate bias stress (NGBS) measurements of the devices also indicate that the SiO2 passivation layer can improve remarkably the NGBS stability. Thus, such a kind of device could be very promising for low-voltage and low-power applications.

Indium–Tin–Oxide Thin-Film Transistors with in Situ Anodized Ta 2 O 5 Passivation Layer

Fabrication of Indium-Tin-Oxide Thin-Film Transistor Using Anodization

Anodized ITO Thin‐Film Transistors

Fabrication and performance of indium oxide based transparent thin film transistors

1‐2: High Performance of InSnO Thin‐Film Transistors Enabled by Anodization Techniques

Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Technique

High-performance indium oxide thin film transistor with ITO source/drain electrodes fabricated by reactive sputtering

Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate

High Performance (vth ~ 0 V, SS ~ 69 Mv/dec, IOn/IOff ~ 1010) Thin-Film Transistors Using Ultrathin Indium Oxide Channel and SiO2 Passivation

High Mobility Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor by Aluminum Oxide Passivation Layer

Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process

Solution-Processed Indium-Zinc-Oxide Thin-Film Transistors Based On Anodized Aluminum Oxide Gate Insulator Modified With Zirconium Oxide

High-performance nano-scale InSnO transistors

Performance improvement of tin-doped zinc oxide thin-film transistor by novel channel modulation layer of indium tin oxide/tin zinc oxide

Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition

Comparative study of amorphous indium gallium zinc oxide thin film transistors passivated by sputtered non-stoichiometric aluminum and titanium oxide layers

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

In-Plane-Gate Indium-Tin-Oxide Thin-Film Transistors Self-Assembled on Paper Substrates

Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3 Passivation Layer

Nanometre-thin Indium Tin Oxide for Advanced High-Performance Electronics

High-Performance Short-Channel Top-Gate Indium-Tin-Oxide Transistors by Optimized Gate Dielectric