Abstract:We prepared amorphous indium–gallium–zinc oxide (a-IGZO) thin films with various Ga content ratios and investigated their feasibility as the active channel layers of top-gate thin-film transistors (TFT). First, the 2-inch IGZO sputtering targets with stoichiometric ratios of InGaZn2O5, InGaZnO4, and InGa2ZnO5.5 were fabricated using In2O3, Ga2O3, and ZnO oxide powders as raw materials via sintering treatments at temperatures ranging from 900 °C to 1300 °C for 6 h or 8 h. X-ray diffraction analysis indicated that the InGaZn2O5 and InGaZnO4 targets are single-phase structures whereas the InGa2ZnO5.5 target is a two-phase structure. Hall effect measurement indicated that the a-InGaZn2O5 and a-InGaZnO4 layers possess a carrier concentration (N) of about 1019 cm−3 and a resistivity (ρ) of about 10−2 Ω·cm; however, the N of the a-InGa2ZnO5.5 layer is only 1017 cm−3, and the ρ is about 1 to 4 Ω·cm. Moreover, the a-InGaZn2O5 layer exhibited the highest Hall-effect mobility (μHall) of 21.17 cm2·V−1·sec−1. This indicated that the impedance of Ga3+ ions to carrier migration is the main factor affecting the electrical properties of a-IGZO layers. Ga content in the a-IGZO channel similarly affects the performance of the TFT devices prepared in this study. The annealing at 300 °C for 1 h in an ambient atmosphere was found to significantly improve the electrical properties of the TFT devices. The best performance was observed in the a-InGaZnO4 TFT sample subjected to post-annealing at 300 °C with Vth = −0.85 V, μFE = 8.46 cm2, V−1·sec−1, SS = 2.31, V·decade−1, and Ion/Ioff = 2.9 × 104.

Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Technique

Fabrication and performance of indium oxide based transparent thin film transistors

Fabrication of Indium-Tin-Oxide Thin-Film Transistor Using Anodization

Indium–Tin–Oxide Thin-Film Transistors with in Situ Anodized Ta 2 O 5 Passivation Layer

Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers

Development of Low Temperature Amorphous Tin-Doped Indium Oxide Thin-Film Transistors Technology

High performance amorphous IGO TFTs grown at low temperature

1‐2: High Performance of InSnO Thin‐Film Transistors Enabled by Anodization Techniques

Anodized ITO Thin‐Film Transistors

Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate

Influence of the Channel Layer Thickness on Electrical Properties of Indium Zinc Oxide Thin-Film Transistor

The Fabrication of Indium–Gallium–Zinc Oxide Sputtering Targets with Various Gallium Contents and Their Applications to Top-Gate Thin-Film Transistors

Fabrication of Transparent Indium Zinc Oxide Thin Film Transistors by Sol-gel Technology

High-performance nano-scale InSnO transistors

Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition

Thin Film Transistor Using Amorphous InGaZnO Films as Both Channel and Source/Drain Electrodes

Plasma-enhanced atomic layer deposition of Sn-doped indium oxide semiconductor nano-films for thin-film transistors

Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors

Effect of vacuum annealing on indium tin oxide transistor with nanometer-thin channel

Amorphous zinc-doped indium oxide channel layers prepared by DC reactive magnetron sputtering

Process Development of Amorphous Indium Tin Gallium Oxide (ITGO) Thin Film Transistors