Abstract:Amorphous oxide semiconductors, especially indium gallium zinc oxide (IGZO), have been widely studied and obtained significant progress in flexible thin-film transistors (TFTs) due to the high carrier mobility and low deposition temperature. However, a further annealing step is generally required to activate electrical properties and improve the device performance, which limited their applications in flexible electronics. In this study, we achieved flexible TFTs and arrays using co-sputtered IGZO and indium tin oxide (ITO) as channels deposited at room temperature without post-annealing. It was found that better transistor switching properties could be effectively achieved by regulating the sputtering power of ITO in the co-sputtered deposition. The device performance is comparable to that of the conventional oxide TFTs with high annealing temperatures (≥300 °C), exhibiting a high saturation mobility (μsat) of 15.3 cm 2 V -1 s -1 , a small subthreshold swing (SS) of 0.21 V dec -1 , and a very high on-off ratio (Ion/off) of 10 11 . In addition, a 12 × 12 flexible TFT array was achieved with uniform performance owing to the low-temperature processing advantage of this technique. The flexible TFTs exhibited robust mechanical flexibility with a minimum bending radius of 5 mm and bending cycles up to 1000. Furthermore, an inverter based on co-sputtered IGZO and ITO was demonstrated with the maximum gain of 22. All these achievements based on the proposed TFTs without post-annealing process are expected to promote the applications in advanced flexible displays and large-area integrated circuits.

Development of Low Temperature Amorphous Tin-Doped Indium Oxide Thin-Film Transistors Technology

All‐Oxide Transparent Thin‐Film Transistors Based on Amorphous Zinc Tin Oxide Fabricated at Room Temperature: Approaching the Thermodynamic Limit of the Subthreshold Swing

Low-temperature fabrication of high performance indium oxide thin film transistors

High performance amorphous IGO TFTs grown at low temperature

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Technique

Room-temperature fabrication of flexible oxide TFTs by co-sputtering of IGZO and ITO

Effect of Different Thermo-Treatment at Relatively Low Temperatures on the Properties of Indium‑tin-Oxide Thin Films

Low-Temperature Fabrication of Fully Transparent Igzo Thin Film Transistors on Glass Substrate

Transparent Amorphous Indium-Gallium-Zinc-Oxygen Thin Film Transistors Using Solution Technology at Low Temperature

Stability of Low Temperature and Transparent Amorphous Ingazno Thin Film Transistor under Illumination

Chemical and Electrical Properties of Low-Temperature Solution-Processed In–Ga–Zn-O Thin-Film Transistors

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

Low-Temperature Solution-Processed Zirconium Oxide Gate Insulators for Thin-Film Transistors

Low Resistivity ITO Thin Films Deposited by NCD Technique at Low Temperature: Variation of Tin Concentration

High-Performance Amorphous Zinc–Tin–Oxide Thin-Film Transistors With Low Tin Concentration

1‐2: High Performance of InSnO Thin‐Film Transistors Enabled by Anodization Techniques

Transparent and Flexible Thin‐Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition

High‐mobility Flexible Thin‐film Transistors with a Low‐temperature Zirconium‐doped Indium Oxide Channel Layer

Amorphous IZO-based transparent thin film transistors

Low‐Temperature, Nontoxic Water‐Induced Metal‐Oxide Thin Films and Their Application in Thin‐Film Transistors