Abstract:Thin‐film transistors (TFTs) based on transparent amorphous oxide semiconductors (TAOSs) have become essential building blocks for a broad range of electronics, since TAOSs facilitate large‐scale fabrication at moderate temperatures and hence feature compatibility with flexible substrates. An emerging indium‐free alternative to the widely commercially exploited indium gallium zinc oxide (IGZO) is amorphous zinc tin oxide (ZTO); however, according to previous reports, achieving acceptable performance of ZTO‐based devices fabricated at temperatures below 300 °C is still challenging to date. Here, key properties of the first all‐oxide and fully transparent metal‐semiconductor field‐effect transistors (MESFETs), metal‐insulator‐semiconductor field‐effect transistors (MISFETs) and junction field‐effect transistors (JFETs) based on amorphous ZTO are compared, employing PtOx, HfOy, and p‐type NiO as gate, respectively. All individual layers have been deposited exclusively at room temperature and do not require any additional postdeposition annealing to obtain sufficient device functionality. Demonstrated TFTs exhibit reasonable current on/off ratios of over six orders of magnitude with subthreshold swings as low as 61 mV dec–1 at room temperature. Transistor characteristics have been recorded for several weeks to study performance consistency over time and are further investigated regarding their stability under bias stress.

All‐Oxide Transparent Thin‐Film Transistors Based on Amorphous Zinc Tin Oxide Fabricated at Room Temperature: Approaching the Thermodynamic Limit of the Subthreshold Swing

Amorphous IZO-based transparent thin film transistors

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

Low-voltage Zinc Oxide Thin-Film Transistors with Solution-Processed Channel and Dielectric Layers below 150 °C

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

Development of Low Temperature Amorphous Tin-Doped Indium Oxide Thin-Film Transistors Technology

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

High Performance Aluminum-Doped Zno Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

High-performance transparent AZO TFTs fabricated on glass substrate

High-Performance Flexible Tin-Zinc-Oxide Thin-Film Transistors Fabricated on Plastic Substrates

59.9 mV·dec Subthreshold Swing Achieved in Zinc Tin Oxide TFTs With In Situ Atomic Layer Deposited AlO Gate Insulator

High-Performance ZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

High Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-coated Hafnium Oxide Gate Dielectrics

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

Solution-Processed Low-Operating-Voltage Thin-Film Transistors with Bottom-Gate Top-Contact Structure

High Mobility Thin-Film Transistor with Solution-Processed Hafnium-Oxide Dielectric and Zinc-Indium-Tin-Oxide Semiconductor

Ultralow-Voltage Transparent Electric-Double-Layer Thin-Film Transistors Processed at Room-Temperature

High-performance Si-doped ZnO Thin-film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

High-Performance ZnO Thin-Film Transistors on Flexible PET Substrates with a Maximum Process Temperature of 100 °C

Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate