Abstract:Junctionless Nanowire Field Effect Transistor (JL-NWFET) has garnered significant attention in recent years owing to its simplified fabrication process, achieved through uniform doping across the device. However, JL-NWFET suffers from certain drawbacks, including low drive current, insufficient volume depletion, and lateral band-to-band tunneling. To address these issues, this paper proposes Improved JL-NWFET with an oppositely doped core–shell structure along with a Dual Material gate (DMG) and high-k spacer. Furthermore, Improved JL-NWFET is optimized for parameters such as core thickness, gate oxide material, spacer material, and spacer length. The performance of Improved JL-NWFET is also evaluated in comparison with other structural variants of JL-NWFET. Notably, Improved JL-NWFET showcases an enhancement of 23.1% and 20% in ON-state current (I ON ) and transconductance (g m ), respectively when compared to the conventional JL-NWFET. Furthermore, the Subthreshold Slope (SS) experiences an 88% improvement in the Improved JL-NWFET as opposed to the JL-NWFET. Additionally, the OFF-state leakage current (I OFF ) undergoes a fivefold reduction, leading to a sixfold increase in the I ON /I OFF ratio compared to the JL-NWFET. Among all the variants of JL-NWFET devices analyzed in this paper, Improved JL-NWFET stands out with its exceptional performance characteristics.

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