Abstract:In this paper we study the device physics of a technique for realizing an n-p-n bipolar transistor action in the source side of a junctionless nanowire tunneling FET (BJN-TFET). In the on-state, tunneling of electrons from valence band of the source to conduction band of the channel enhances the hole concentration as well as the potential in the source region which drives a built-in BJT transistor by forward biasing the base-emitter junction, with the source acting as a p-type region. Owing to the sharp switching of the JN-TFET and high BJT current gain, the overall performance is improved, including favorable high on-state current (2.17*10-6 A/um), and sub 60 mV/dec subthreshold swing (~ 50 mV/dec) at low supply voltages. This approach modifies the current mechanism owning to the triggered BJT and makes the proposed structure more attractive for scaling requirements in future low power application.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to improve the performance of junctionless nanowire tunnel field - effect transistors (JN - TFETs), especially in order to achieve a high on - state current (\(I_{on}\)) in low - power applications and a subthreshold swing (SS) lower than 60 mV/dec. Traditional JN - TFETs have problems of low on - state current and subthreshold swing greater than 60 mV/dec at low operating voltages, which limit their potential in low - power applications. To solve these problems, the authors propose a new device structure - BJN - TFET (junctionless nanowire tunnel field - effect transistor with n - p - n bipolar behavior). By introducing a built - in bipolar junction transistor (BJT), the on - state performance of the device is enhanced. Specifically, when the device is in the on - state, electrons tunnel from the valence band in the source region to the conduction band in the channel, generating holes and accumulating in the source region, thereby increasing the potential of the source region, forward - biasing the base - emitter junction, and finally triggering the BJT, resulting in a large drain current (i.e., on - state current). This mechanism not only increases the on - state current but also significantly improves the subthreshold swing, enabling it to exhibit excellent performance even at low operating voltages. In summary, this paper aims to improve the performance of junctionless nanowire tunnel field - effect transistors by introducing a new current mechanism (BJT behavior triggered by tunneling) to meet the requirements of future low - power applications.

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