Abstract:Nano-electronic integrated circuit technology is exclusively based on MOSFET transistor due to its scalability down to the nanometer range. On the other hand, bipolar junction transistor (BJT), which provides unmatched analog characteristics and frequency response, cannot be scaled to nanometer regime without the loss of transistor action. Here a versatile nanoscale transistor is introduced that provides identical BJT behavior and expands its capabilities. The new transistor uses CMOS fabrication technology and creates BJT’s emitter, base, and collector via electric fields. By allowing carrier modulation during operation, its current gain can be changed at least by several orders of magnitude. This property introduces novel adaptive, variable gain, and programmable analog modules into existing electronic circuit design and manufacturing. Regular BJT behavior in various confiurations are obtained, the common-emitter presented here indicates an ideality factor of 1.09 for forward biased emitter–base diode, a Gummel plot similar to regular BJT, and a current amplification factor that can change by 6 orfers of magnitude by varying gate voltages. A NOT gate version of this device with the critical dimension of 7 nm operates at 730 GHz, and its three-stage ring oscillator exhibits a frequency of 240 GHz. With proper gate biasing, it can also operate as a nanoscale MOSFET, easily alleviating short-channel effects.

N-P-N Bipolar Action in Junctionless Nanowire TFET: Physical Operation of a Modified Current Mechanism for Low Power Applications

A Novel Nanosheet Reconfigurable Field Effect Transistor with Dual-Doped Source/drain

A Resonant Tunneling Nanowire Field Effect Transistor with Physical Contractions: A Negative Differential Resistance Device for Low Power Very Large Scale Integration Applications

Oppositely-Doped Core-Shell Junctionless Nanowire FET: Design and Investigation

Metal-Gated Junctionless Nanowire Transistors

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Electrically Doped PNPN Tunnel Field-Effect Transistor Using Dual-Material Polarity Gate with Improved DC and Analog/RF Performance

Experimental Investigation of a Novel Junction-Modulated Hetero-Layer Tunnel FET with the Striped Gate for Low Power Applications.

Junctionless nanowire MOSFET with dynamic threshold voltage operation methodology

p-i-n Tunnel FETs vs. n-i-n MOSFETs: Performance Comparison from Devices to Circuits

Normally-off trench JFET technology in 4H silicon carbide

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

A Junctionless Nanowire Transistor with a Dual-Material Gate

In-Built N+ Pocket Electrically Doped Tunnel FET With Improved DC and Analog/RF Performance

Performance comparison between p-i-n tunneling transistors and conventional MOSFETs

Field-effect BJT: an adaptive and multifunctional nanoscale transistor

Electrostatically Doped Heterojunction TFET with Enhanced Driving Capabilities for Low Power Applications

Novel Bipolar-Enhanced Tunneling Fet with Simulated High On-Current

Lead Zirconium Titanate (PZT)-Based Gate-All-Around Negative-Capacitance Junctionless Nanowire FET for Distortionless Low-Power Applications

Implementation of Low Power Inverter using Si1-xGex Pocket N & P-Channel Junction-Less Double Gate TFET

PNP Nanofluidic Transistor with Actively Tunable Current Response and Ionic Signal Amplification