Abstract:The band-to-band tunneling transistors have some performance advantages over the conventional MOSFETs due to the <60mV/dec sub-threshold slope. In this paper, carbon nanotubes are used as a model channel material to address issues that we believe will apply to BTBT FETs vs. MOSFETs more generally. We use pz-orbital tight-binding Hamiltonian and the non-equilibrium Green function (NEGF) formalism for rigorous treatment of dissipative quantum transport. A device level comparison of p-i-n TFETs and n-i-n MOSFETs in both ballistic and dissipative cases has been performed previously. In this paper, the possibility of using p-i-n TFETs in ultra-low power sub-threshold logic circuits is investigated using a rigorous numerical simulator. The results show that, in sub-threshold circuit operation, the p-i-n TFETs have better DC characteristics, and can deliver ~15x higher performance at the iso-P_LEAKAGE, iso-VDD conditions. Because p-i-n TFETs can operate at lower VDD than n-i-n MOSFETs, they can deliver ~3x higher performance at the same power (P_OPERATION). This results in ~3x energy reduction under iso-delay conditions. Therefore the p-i-n TFETs are more suitable for sub-threshold logic operation.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **Compare the performance of p - i - n tunnel field - effect transistors (TFETs) and n - i - n metal - oxide - semiconductor field - effect transistors (MOSFETs) in ultra - low - power sub - threshold logic circuits**. Specifically, the main research objectives include: 1. **Sub - threshold characteristic comparison**: Explore whether p - i - n TFETs can provide better performance in the sub - threshold region compared to n - i - n MOSFETs, especially in terms of direct - current (DC) characteristics and energy efficiency. 2. **Ultra - low - power application potential**: Evaluate the application potential of p - i - n TFETs in ultra - low - power sub - threshold logic circuits, especially their advantages in terms of delay, power consumption, and energy consumption. 3. **Influence factor analysis**: Study the influence of different factors (such as temperature, phonon scattering, etc.) on the performance of these two devices, and propose optimization schemes to improve the performance of p - i - n TFETs. Through these studies, the paper aims to provide theoretical basis and technical support for the design of future ultra - low - power electronic devices. Specific research methods include using strict numerical simulators for device - level and circuit - level simulations to ensure the accuracy and reliability of the results. ### Key Conclusions - **Sub - threshold slope**: p - i - n TFETs have a steeper sub - threshold slope (<60mV/dec) than MOSFETs, which makes them have lower leakage current and power consumption during sub - threshold operation. - **Performance improvement**: Under the same leakage power consumption (iso - PLEAKAGE) condition, p - i - n TFETs show about 15 - fold performance improvement in simple benchmark circuits (such as an inverter driving another identical inverter). - **Power consumption reduction**: Under the same delay condition, the energy consumption of p - i - n TFETs is about one - third of that of n - i - n MOSFETs. - **Voltage operation advantage**: Since p - i - n TFETs can operate at a lower working voltage, they can provide higher performance under the same power consumption condition. In summary, this paper demonstrates the significant advantages of p - i - n TFETs in ultra - low - power sub - threshold logic circuits, providing an important reference for the development of future high - efficiency, low - power electronic devices.

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