Abstract:The incessant reduction of transistor dimensions requires new transformations in devices or novel materials to further sustain Moore's law. From the 5 nm technology node and beyond, the gate-all-around field effect transistor (GAAFET) dominates the semiconductor industry, owing to its ultimate gate electrostatic controllability. Two-dimensional (2D) materials possess the merits of dangling-bond-free surfaces, atomic thicknesses down to sub-1 nm, and high mobility maintenance at sub-1 nm thickness, which are challenges long plaguing traditional three-dimensional (3D) semiconductors. Herein, we devised a double-gated GAAFET (DG GAAFET) based on monolayer MoS2. Compared with a DG GAAFET based on Si with the same footprint, the MoS2 DG GAAFET demonstrates the capability of suppressing short-channel effects out of the regime of the Si DG GAAFET, though a relatively small I-on value, which is attributed to the lower density of states, has been obtained in the monolayer MoS2 DG GAAFET. A single-gated GAAFET based on monolayer MoS2 (MoS2 SG GAAFET) has also been simulated as a control device, which manifests an inferior device performance and degraded short-channel effects compared to those of the MoS2 DG GAAFET, which are revealed by larger SS and a reduced I-on/I-off ratio. It is verified to be feasible to surge I-on by 84% without short-channel effect degradation via the incorporation of an additional channel, bobbing well for the application of the DG GAAFET device based on 2D materials in high-performance electronics. Besides, a logic inverter based on a double-channeled double-gated GAAFET (DG DC GAAFET) based on WSe2 and MoS2 has been simulated, and a voltage gain of 36 has been obtained under a gate voltage of 2 V. Moreover, an additional degree of freedom can be introduced by adding a SiO2 interlayer, which contributes to the subthreshold voltage matching between a MoS2 n-type transistor and a WSe2 p-type transistor, where a voltage gain of 45 at a gate voltage of 2 V has been obtained. Both the above complementary metal-oxide-semiconductor (CMOS) inverter structures can make full play of the inner areas of the GAA structure, which sheds light on the footprint decrease of inverters, leaving room for more electronics to be crammed into a single chip.

Implementation of Low Power Inverter using Si1-xGex Pocket N & P-Channel Junction-Less Double Gate TFET

Germanium-source L-shaped TFET with dual in-line tunneling junction

Design Transmission Gates Using Double-Gate Junctionless TFETs

The Application of Gate-Drain Underlap Architecture in TFET-based Inverters

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

GaSb/Si Heterojunction Based Pocket Engineered Vertical Non-Uniform Channel Double Gate TFETs for Low Power Applications

Design, simulation and analog/RF performance evaluation of a hetero-stacked source dual metal T-shaped gate tunnel-FET in thermally variable environments

Design and Analysis of Gate Stack Silicon-on-Insulator Nanosheet FET for Low Power Applications

Comparative investigation of low-power ferroelectric material embedded with different heterojunction vertical TFET structures

GaN-based low-power JLDG-MOSFETs: Effects of doping and gate work function

Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance

Short-Channel Effect Suppression and Footprint Reduction in Double Gate-All-Around Field Effect Transistors and Inverters Based on Two-Dimensional Materials

Investigation of SiGe/Si heterojunction inductive line tunneling TFET with source Schottky contact for prospect ultra-low power applications

Ultra Low Power Circuits Design Based on III-V Group Heterojunction Tunnel Field Effect Transistor

A Dual-Drain Vertical Tunnel FET with Improved Device Performance: Proposal, Optimization, and Investigation

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

Impact of high mobility III‐V compound material of a short channel thin‐film SiGe double gate junctionless MOSFET as a source

Analysis of III-V material-based dual source T-channel junction-less TFET with metal implant for improved DC and RF performance

Digital Performance Assessment of the Dual-Material Gate GaAs/InAs/Ge Junctionless TFET

The Effect of a Dual Oxide - Dual Gate Material and a Sensitivity Analysis on the Performance of a Junctionless Tunnel FET

Digital-circuit Analysis of Short-Gate Tunnel FETs for Low-Voltage Applications