Abstract:In this work, a new Hetero-Stacked Source Dual Metal T-shaped Gate Silicon-on-Insulator (SOI) TFET (HS-DMTG-TFET) is proposed, exhibiting significantly improved DC performance, and switching performance over existing TFET topologies. A low threshold voltage of less than 200 mV in the proposed device allows for its integration in a variety of low-power applications. This device has been proposed in response to an acute need for low-power devices for bio-sensing, in situ memory, and loss-minimized switching. The proposed structure incorporates an overlapped gate pocket with a dual metal molybdenum-aluminum gate. The inclusion of a source side pocket improves the tunneling of charge carriers, which enhances the ON-state current. The Band-to-Band-Tunneling (BTBT) characteristic of TG-TFET in a direction perpendicular to the channel contributes to an elevated ON-current, attributed to a comparatively larger tunneling area. The channel exhibits a vertical U-shape, making the proposed device more scalable as compared to existing TFETs. A series of dimension and material-specific optimizations have been made and showcased in this work along with physical reasoning for the observed improvements. An I ON /I OFF ratio of ~ 10 14 is achieved with an I ON of 1.05 × 10 –3 A/μm and an I OFF of 1.35 × 10 –17 A/μm. A highly reduced sub-threshold slope (lower is better) of 10.7 mV/dec is observed, indicating the good transient performance of the device. Considerable improvement in RF performance of the device has been showcased. The temperature dependence on transfer and RF characteristics has been also analyzed. The exhibited device characteristics indicate the potential of using composite material gates for low-power applications over their conventional single-metal counterparts. Reduced power consumption coupled with a compact device structure results in a minimally invasive device, suitable for low-power wearable sensors and bio-integrable circuits.

Electrostatically Doped Heterojunction TFET with Enhanced Driving Capabilities for Low Power Applications

Germanium-source L-shaped TFET with dual in-line tunneling junction

Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance

Performance Analysis of Heterojunction and Hetero Dielectric Triple Material Double Gate TFET

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

Design Optimization of a Silicon-Germanium Heterojunction Negative Capacitance Gate-All-Around Tunneling Field Effect Transistor based on a Simulation Study

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

High On-State Current P-Type Tunnel Effect Transistor Based on Doping Modulation

A Novel Planar InAs/Si Hetero-TFET with Buried Drain Design and Face-tunneling Technique

Design and Analysis of CMOS-Compatible III-V Compound Electron-Hole Bilayer Tunneling Field-Effect Transistor for Ultra-Low-Power Applications

Performance Analysis of III-V and IV Semiconductors Based Double Gate Hetero Material Negative Capacitance TFET

Analysis of III-V material-based dual source T-channel junction-less TFET with metal implant for improved DC and RF performance

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

Design, simulation and analog/RF performance evaluation of a hetero-stacked source dual metal T-shaped gate tunnel-FET in thermally variable environments

Ultra-high on-current in two-dimensional Tl2O TFETs with tunneling width modulation

Sharp-Switching High-Current Tunneling Devices

A GaSb/In0.4Ga0.6As Heterojunction Z-Shaped Tunnel Field-Effect Transistor with High Performance

In-Built N+ Pocket Electrically Doped Tunnel FET With Improved DC and Analog/RF Performance

Inductive line tunneling FET using epitaxial tunnel layer with Ge-source and charge enhancement insulation

Investigation of SiGe/Si heterojunction inductive line tunneling TFET with source Schottky contact for prospect ultra-low power applications

High performance tunnel field-effect transistor by gate and source engineering.