Acetaminophen protein adducts: is acetaminophen to blame?

William J. Holubek,Lewis S. Nelson

DOI: https://doi.org/10.1053/J.GASTRO.2006.08.056

IF: 29.4

2006-10-01

Gastroenterology

Abstract:

What problem does this paper attempt to address?

III-V/Ge MOS Device Technologies for Low Power Integrated Systems

S. Takagi,M. Noguchi,M. Kim,S. -H. Kim,C. -Y. Chang,M. Yokoyama,K. Nishi,R. Zhang,M. Ke,M. Takenaka

DOI: https://doi.org/10.1016/j.sse.2016.07.002

IF: 1.916

2016-01-01

Solid-State Electronics

Abstract:CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the promising devices for high performance and low power integrated systems in the future technology nodes, because of the enhanced carrier transport properties. In addition, Tunneling-FETs (TFETs) using Ge/III-V materials are regarded as one of the most important steep slope devices for the ultra-low power applications. In this paper, we address the device and process technologies of Ge/III-V MOSFETs and TFETs on the Si CMOS platform. The channel formation, source/drain (S/D) formation and gate stack engineering are introduced for satisfying the device requirements. The plasma post oxidation to form GeOx interfacial layers is a key gate stack technology for Ge CMOS. Also, direct wafer bonding of ultrathin body quantum well III-V-OI channels, combined with Tri-gate structures, realizes high performance III-V n-MOSFETs on Si. We also demonstrate planar-type InGaAs and Ge/strained SOI TFETs. The defect-less p+-n source junction formation with steep impurity profiles is a key for high performance TFET operation.
Ultra Low Power Circuits Design Based on III-V Group Heterojunction Tunnel Field Effect Transistor

Jipan Huang,Fang Gao,Xin'an Wang,Hongying Chen

DOI: https://doi.org/10.1109/asicon.2015.7517090

2015-01-01

Abstract:With the scaling down of MOSFET, the static leakage current increases exponentially since the Subthreshold Swing(SS) is limited by the thermal theory to 60mV/dec. Tunnel field effect transistors based on BTBT have slope Subthreshold Swing and can be used for low power applications. In this paper, InverterFO1, two-input XOR gates and SRAM cell based on III-V heterojunction TFET are designed and evaluated. Leakage power of TFET InverterFO1 decreased to 1.7%. Leakage power of SRAM cell obtains 76.3X improvements over 130nm CMOS commercial model at VDD=0.6V. Meanwhile, this paper talks about the effect of asymmetry Current of TFET to the topology structure of pass-transistor based circuits.
A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

Shizheng Yang,Hongliang Lv,Bin Lu,Silu Yan,Yuming Zhang

DOI: https://doi.org/10.1109/access.2020.2970502

IF: 3.9

2020-01-01

IEEE Access

Abstract:A novel planar architecture is proposed for tunnel field-effect transistors (TFETs). The advantages of this architecture are exhibited, taking the InAs/Si TFET as an example, and the effects of different device parameters are analyzed in detail. Owing to the gate field being parallel to the tunneling interface, the gate control is enhanced, and a better electrical performance is obtained. Moreover, different from a conventional TFET, in which the effective tunneling area and current can hardly be modulated by the gate length, in our proposed device, the effective tunneling area and current can be adjusted depending on the actual requirements of circuit design, which increases the flexibility of TFET-based circuit design. In addition, the device architecture can also be extended to other materials, such as Ge/Si and GaSb/InAs, and thus be used for both n-type and p-type devices. The results show that the complementary digital inverter structure with InAs/Si as the n-type TFET and Ge/Si as the p-type TFET would be helpful for future ultralow power applications. This proposed structure without any complicated fabrication steps shows better compatibility with CMOS technology compared to other TFETs with heterojunction and structural innovations presented in theoretical works.
Atomically Thin Van Der Waals Tunnel Field-Effect Transistors and Its Potential for Applications

Shih-Hsien Yang,You-Teng Yao,Yong Xu,Che-Yi Lin,Yuan-Ming Chang,Yuen-Wuu Suen,Huabin Sun,Chen-Hsin Lien,Wenwu Li,Yen-Fu Lin

DOI: https://doi.org/10.1088/1361-6528/aaf765

IF: 3.5

2018-01-01

Nanotechnology

Abstract:Power dissipation is a crucial problem as the packing density of transistors increases in modern integrated circuits. Tunnel field-effect transistors (TFETs), which have high energy filtering provided by band-to-band tunneling (BTBT), have been proposed as an alternative electronics architecture to decrease the energy loss in bias operation and to achieve steep switching at room temperature. Very recently, the BTBT behavior has been demonstrated in van der Waals heterostructures by using unintentionally doped semiconductors. The reason of the BTBT formation is attributed to a significant band bending near the heterointerface, resulting in carrier accumulations. In this work, to investigate charge transport in type-III transistors, we adopted the same band-bending concept to fabricate van der Waals BP/MoS2 heterostructures. Through analyzing the temperature dependence of their electrical properties, we carefully ruled out the contribution of metal-semiconductor contact resistances and improved our understanding of carrier injection in 2D type-III transistors. The BP/MoS2 heterostructures showed both negative differential resistance and 1/f2 current fluctuations, strongly demonstrating the BTBT operation. Finally, we also designed a TFET based on this heterostructure with an ionic liquid gate, and this TFET demonstrated an subthreshold slope can successfully surmount the thermal limit of 60 mV/decade. This work improves our understanding of charge transport in such layered heterostructures and helps to improve the energy efficiency of next-generation nanoscale electronics.
Analysis of III-V material-based dual source T-channel junction-less TFET with metal implant for improved DC and RF performance

Aadil Anam,S. Intekhab Amin,Dinesh Prasad,Naveen Kumar,Sunny Anand

DOI: https://doi.org/10.1016/j.micrna.2023.207629

2023-06-12

Micro and Nanostructures

Abstract:In this paper, two III-V material-based junctionless tunnel FET devices, D-1 and D-2, are proposed. The proposed device D-1 has a low bandgap (GaSb-based) dual source and a higher bandgap (GaAs-based) T-channel junctionless, and the proposed device D-2 has the same architecture as D-1 in addition to a metal strip implant in the gate oxide near both source regions. Due to junctionless architecture, the proposed D-1 and D-2 eliminate random dopant fluctuations (RDF), remove the need for high thermal budgeting, and give better performance with less variability. The wide bandgap (GaAs) T-channel and the drain region formed far from the gate fully suppress the ambipolarity for both the proposed D-1 and D-2. The low-bandgap GaSb material in the source improves the ON current for D-1 and D-2. Compared to the conventional junctionless TFET (JL-TFET), the proposed D-2 (even at a lower bias of 0.5 V) improves the ON current by 1.7 times and the ION/IOFF ratio by 216.66 times, with a much-reduced average subthreshold swing value of 32.7 mV/dec compared to 70 mV/dec of the conventional JL-TFET. Furthermore, the proposed D-2 also provides much improved RF performance with a higher transconductance (gm) of 147.8 μs, higher cut-off frequency (fT) of 32.26 GHz, a higher gain-bandwidth product (GBW) of 3.52 GHz, higher transconductance-frequency product (TFP) of 286 GHz, and a lower transit time (τ) of 5 × 10–12 s. Furthermore, we analyze various linearity parameters such as gm2, gm3, VIP2, VIP3, IIP3, and IMD3 for both D-1 and D-2, and our findings indicate that D-2 exhibits improved linearity performance.
Design, simulation and analog/RF performance evaluation of a hetero-stacked source dual metal T-shaped gate tunnel-FET in thermally variable environments

Mukesh Kumar,Gautam Bhaskar,Aditya Chotalia,Chhavi Rani,Puja Ghosh,Soumak Nandi,Shashank Kumar Dubey,Kalyan Koley,Aminul Islam

DOI: https://doi.org/10.1007/s00542-024-05677-0

2024-05-08

Microsystem Technologies

Abstract:In this work, a new Hetero-Stacked Source Dual Metal T-shaped Gate Silicon-on-Insulator (SOI) TFET (HS-DMTG-TFET) is proposed, exhibiting significantly improved DC performance, and switching performance over existing TFET topologies. A low threshold voltage of less than 200 mV in the proposed device allows for its integration in a variety of low-power applications. This device has been proposed in response to an acute need for low-power devices for bio-sensing, in situ memory, and loss-minimized switching. The proposed structure incorporates an overlapped gate pocket with a dual metal molybdenum-aluminum gate. The inclusion of a source side pocket improves the tunneling of charge carriers, which enhances the ON-state current. The Band-to-Band-Tunneling (BTBT) characteristic of TG-TFET in a direction perpendicular to the channel contributes to an elevated ON-current, attributed to a comparatively larger tunneling area. The channel exhibits a vertical U-shape, making the proposed device more scalable as compared to existing TFETs. A series of dimension and material-specific optimizations have been made and showcased in this work along with physical reasoning for the observed improvements. An I ON /I OFF ratio of ~ 10 14 is achieved with an I ON of 1.05 × 10 –3 A/μm and an I OFF of 1.35 × 10 –17 A/μm. A highly reduced sub-threshold slope (lower is better) of 10.7 mV/dec is observed, indicating the good transient performance of the device. Considerable improvement in RF performance of the device has been showcased. The temperature dependence on transfer and RF characteristics has been also analyzed. The exhibited device characteristics indicate the potential of using composite material gates for low-power applications over their conventional single-metal counterparts. Reduced power consumption coupled with a compact device structure results in a minimally invasive device, suitable for low-power wearable sensors and bio-integrable circuits.

engineering, electrical & electronic,materials science, multidisciplinary,nanoscience & nanotechnology,physics, applied
A Novel Planar InAs/Si Hetero-TFET with Buried Drain Design and Face-tunneling Technique

Bin Lu,Hongliang Lu,Yuming Zhang,Yimen Zhang,Zhijun Lv,Yingxiang Zhao

DOI: https://doi.org/10.1109/icsict.2018.8564867

2018-01-01

Abstract:In this paper, a novel planar InAs/Si heterojunction tunnel field-effect transistor (HTFET) is proposed and studied by numerical simulations. Utilizing the large conduction band offset between InAs and Si, the buried drain design with selective doping in the Si substrate instead of the top InAs layer is applied to suppress the Shockley-Read-Hall (SRH) recombination significantly, achieving the off-state current (I OFF ) about two decades lower than the conventional InAs-doped drain. Besides, the face-tunneling technique is also incorporated to place the gate parallel with the InAs/Si tunneling interface. Thus all the points on the tunneling interface are the same distance far away from the gate electrode and the tunneling field is uniformly distributed along the tunneling interface resulting in almost simultaneous carrier tunneling process and very sharp turn on/off switch. In addition, different with most of the HTFET designs, the proposed InAs/Si HTFET with planar device architecture is more preferable for the compatibility with the standard CMOS processes, exhibiting its promising potential for future ultra-low power applications.
A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

Zhijun Lyu,Hongliang Lv,Yuming Zhang,Yimen Zhang,Yi Zhu,Jiale Sun,Miao Li,Bin Lu

DOI: https://doi.org/10.1109/TED.2020.3048917

IF: 3.1

2021-01-01

IEEE Transactions on Electron Devices

Abstract:In this article, a novel planar InAs/GaSb heterojunction face-tunneling FET (HFTFET) is proposed for device performance improvement. As is known in previous studies, the entire tunneling junction of HFTFET can be controlled by gate effectively and uniformly, and therefore, the large effective tunneling area and extremely steep turn on/off switch would be achieved. However, the leakage current between source and drain degrades the OFF-state characteristics and turn on/off switch greatly. Hence, an implanted drain is introduced in the proposed InAs/GaSb HFTFET for reducing the leakage to optimize the performance, which also makes the fabrication process compatible with the standard CMOS process platform. Consequently, large tunneling current, steep subthreshold swing, and small leakage current can be obtained simultaneously, which would further promote the development of tunnel field-effect transistors (TFETs) and their ultralow-power applications.
Performance Analysis of Heterojunction and Hetero Dielectric Triple Material Double Gate TFET

C. Sheeja Herobin Rani,R. Solomon Roach,T. S. Arun Samuel,S. Edwin Lawrence

DOI: https://doi.org/10.1007/s12633-021-01355-2

IF: 3.4

2021-09-08

Silicon

Abstract:The gate material work function engineering and hetero-dielectric engineering concepts are discussed in this paper to design a novel triple material DG Tunnel FET. The three different work functions and the hetero-dielectric material within the transistor control the charge carrier density in the source, drain, and channel region. The heterojunction germanium and silicon material in the source-channel junction improve tunneling based on the bandgap engineering. The hetero-dielectric materials, namely high–K material in the source region and low-K material in the drain region, suppress the gate-to-drain capacitance effect, enhancing the cut-off frequency. The increased tunneling enhances the ON current, and the tri material restricts the reverse tunneling, which suppresses the ambipolar behaviour of the TFET. The electrical characteristics like surface potential, electric field, drain current, transconductance, and cut-off frequency of the TMDG TFET are simulated using TCAD simulation. Also, results validate the suitable selection of the doping concentration in the source, drain region and different tri-gate work function values for the proposed TMDG TFET. The proposed device shows remarkable progress in ON current of the order (10− 3 A/µm) and the leakage current in Femto range (10− 17 A/µm), with the ION/IOFF current ratio of 1014. The proposed structure is suitable for low-power applications.

materials science, multidisciplinary,chemistry, physical
Subthreshold Performance Analysis of Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel Field Effect Transistor for Ultra Low Power Applications

M. Venkatesh,M. Suguna,N. B. Balamurugan

DOI: https://doi.org/10.1007/s11664-019-07492-0

IF: 2.1

2019-08-06

Journal of Electronic Materials

Abstract:An improved subthreshold analytical model of Germanium source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET Ge(SRC)-DH-DD-TM-SG-TFET is proposed. The dielectric gate oxide structure is comprised of Silicon-dioxide and Hafnium oxide. The high-K dielectric materials overcomes the Short Channel Effects caused by ultrathin silicon devices. The subthreshold analysis is carried out by solving a 2-D Poisson’s equation using the parabolic approximation method. The electrical characteristics of Ge(SRC)-DH-DD-TM-SG-Tunnel FET are analyzed using a 3-D Sentaurus TCAD device simulator and compared with the silicon based single halo and triple material surrounding gate TFET structures. The proposed model shows a lower ambipolar current and a better ION/IOFF ratio of 106. Moreover, the influence of germanium/silicon in dual dielectric materials has reduced the tunneling barrier width and the ON current (10−4 A/μm) of the proposed device and improved at the level of CMOS transistors.

engineering, electrical & electronic,materials science, multidisciplinary,physics, applied
Investigation on Tunneling-based Ternary CMOS with Ferroelectric-Gate Field Effect Transistor Using TCAD Simulation

Kitae Lee,Sihyun Kim,Daewoong Kwon,Byung-Gook Park

DOI: https://doi.org/10.3390/app10144977

2020-07-20

Applied Sciences

Abstract:Ternary complementary metal-oxide-semiconductor technology has been spotlighted as a promising system to replace conventional binary complementary metal-oxide-semiconductor (CMOS) with supply voltage (VDD) and power scaling limitations. Recently, wafer-level integrated tunneling-based ternary CMOS (TCMOS) has been successfully reported. However, the TCMOS requires large VDD (> 1 V), because a wide leakage region before on-current should be necessary to make the stable third voltage state. In this study, TCMOS consisting of ferroelectric-gate field effect transistors (FE-TCMOS) is proposed and its performance evaluated through 2-D technology computer-aided design (TCAD) simulations. As a result, it is revealed that the larger subthreshold swing and the steeper subthreshold swing are achievable by polarization switching in the ferroelectric layer, compared to conventional MOSFETs with high-k gate oxide, and thus the FE-TCMOS can have the more stable (larger static noise margin) ternary inverter operations at the lower VDD.
Electrostatically Doped Heterojunction TFET with Enhanced Driving Capabilities for Low Power Applications

Kanchan Cecil,Jawar Singh

DOI: https://doi.org/10.48550/arXiv.1512.06232

2015-12-19

Abstract:This paper projects the enhanced drive current of a n-type electrostatically doped (ED) tunnel field-effect transistor (ED-TFET) based on heterojunction and band-gap engineering via TCAD 2-D device simulations. The homojunction ED-TFET device utilizes the electrostatic doping in order to create the source/drain region on an intrinsic silicon nanowire that also felicitates dynamic re-configurability. The ED-TFET offers good electrostatic control over the channel with reduced thermal budget and process complexity. However, device exhibits low ON current, therefore, in this work, we elaborate on interfacing of group III-V with group IV semiconductors for heterojunction. Incorporation of heterojunction and band gap engineering in the ED-TFET has improved drive current even at very low operating voltage. The comparison of various low band gap source region materials shows that germanium (Ge) source (Si-Si-Ge) ED-TFET provides steepest subthreshold swing (SS) of about 9.5 mV/dec, and higher ON-state drive current of 1.58 mA at $V_{DS}$ = 1 V and 0.093 mA at $V_{DS}$ = 0.5 V with same SS.

Mesoscale and Nanoscale Physics
Design Optimization of a Silicon-Germanium Heterojunction Negative Capacitance Gate-All-Around Tunneling Field Effect Transistor based on a Simulation Study

Weijie Wei,Weifeng Lü,Ying Han,Caiyun Zhang,Dengke Chen

DOI: https://doi.org/10.1088/1674-1056/acaa2c

2022-12-09

Chinese Physics B

Abstract:Abstract The steep sub-threshold swing of a tunneling field-effect transistor (TFET) makes it one of the best candidates for low-power nanometer devices. However, the low driving capability of TFETs prevents their application in integrated circuits. In this study, an innovative gate-all-around (GAA) TFET, which represents a negative capacitance GAA gate-to-source overlap TFET (NCGAA-SOL-TFET), is proposed to increase the driving current. The proposed NCGAA-SOL-TFET is developed based on computer-aided design (TCAD) simulations. The proposed structure can solve the problem of the insufficient driving capability of conventional TFETs and is suitable for sub-3-nm nodes. In addition, due to the negative capacitance effect, the surface potential of the channel can be amplified, thus enhancing the driving current. The gate-to-source overlap (SOL) technique is used for the first time in an NCGAA-TFET to increase the band-to-band tunneling rate and tunneling area at the silicon-germanium heterojunction. By optimizing the design of the proposed structure by adjusting the SOL length and the ferroelectric layer thickness, a sufficiently large on-state current of 17.20 μA can be achieved and the threshold voltage can be reduced to 0.31 V with a sub-threshold swing of 44.98 mV/decade. Finally, the proposed NCGAA-SOL-TFET can overcome the Boltzmann limit-related problem, achieving a driving current that is comparable to that of the traditional complementary metal-oxide semiconductor devices.

physics, multidisciplinary
Unravelling tacit knowledge: Engagement Strategies of Centres for Excellence in Teaching and Learning

A. Kottmann

DOI: https://doi.org/10.3990/4.2589-9716.2017.03

2017-08-31

Abstract:Centres for Excellence in Teaching and Learning or Centres for Teaching and Learning have become widespread across higher education institutions in Europe. These centres can be defined as nodes of “nodes of teaching and learning-focused activities” (Saunders et al. 2008, p. 28). Recent research has shown that centres frequently face difficulties promoting their enhancement activities (Gosling & Turner, 2014). This is due to a number of reasons, in particular to the low acceptance of the pedagogical knowledge used by the centres among academic staff. It appears that centres often have not developed a strategy to engage academic staff in their enhancement activities. This working paper however investigates the engagement strategies of two Centres for Teaching and Learning, one located at a mono-disciplinary institution in Norway, the other at a research university in Germany. As these centres have been implemented differently, the working paper also discusses how implementation affects the centre’s success. As the cases under review are highly contrasting the comparison singles out facilitators and hindrances to effective engagement strategies.
Ultra-high on-current in two-dimensional Tl2O TFETs with tunneling width modulation

Chuyao Chen,Jialin Yang,Wenhan Zhou,Xuemin Hu,Tingting Guo,Shengli Zhang

DOI: https://doi.org/10.1007/s40843-023-2811-7

2024-04-05

Science China Materials

Abstract:Tunneling field-effect transistors (TFETs) have attracted tremendous attention as post-complementary metal oxide semiconductor low-power-dissipation devices. Based on the band-to-band tunneling mechanism, TFETs hold the potential for suppressing the subthreshold swing (SS) below 60 mV dec −1 . However, the relatively low on-state current compared with metal-oxide-semiconductor FETs hinders the practical application of the traditional TFETs. Herein, we propose that two-dimensional (2D) Tl 2 O possesses a direct and moderate bandgap, small effective mass for electrons and holes, unique threefold degenerate, and strong anisotropic electronic structures, which is suitable for the channel material of the pocket-doped TFETs. Benefiting from the reduced tunneling width led by the pocket, the 2D Tl 2 O TFET with a 10-nm gate length possesses an ultra-high on-state current of 3449 μA μm −1 with a sub-thermal SS of 49 mV dec −1 . Notably, the on-state current increases to 441% compared with no pocket doping and successfully meets the International Roadmap for Devices and Systems (IRDS) high-performance requests for the year 2028. This work demonstrates the great potential of 2D Tl 2 O pocket TFETs for next-generation low-power-dissipation and high-performance nanoelectronics.

materials science, multidisciplinary
Enabling Power-Efficient Designs with III-V Tunnel FETs

Moon Seok Kim,Huichu Liu,Karthik Swaminathan,Xueqing Li,Suman Datta,Vijaykrishnan Narayanan

DOI: https://doi.org/10.1109/csics.2014.6978551

2014-01-01

Abstract:III-V Tunnel FETs (TFET) possess unique characteristics such as steep slope switching, high gm/IDS, uni-directional conduction, and low voltage operating capability. These characteristics have the potential to result in energy savings in both digital and analog applications. In this paper, we provide an overview of the power efficient properties of III-V TFETs and designs at the device, circuit and architectural level.
Optimizing InGaAs/GaAsSb Staggered Bandgap U-Gate Line TFET With p+-Pocket Implant and Negative Capacitance for Enhanced Performance

Aadil Anam,S. Intekhab Amin,Dinesh Prasad

DOI: https://doi.org/10.1109/tnano.2024.3437669

2024-08-18

IEEE Transactions on Nanotechnology

Abstract:In this noteworthy paper, we present a novel and comprehensive investigation into the optimization of performance parameters for the conventional U-Gate III-V line TFET through TCAD simulation. Our unprecedented threefold optimization strategy encompasses multiple facets, marking a significant contribution to the field. Firstly, in our pursuit of enhancing OFF current performance, we implemented a pioneering approach by employing a highly doped p+-pocket, effectively suppressing parasitic corner tunneling and resulting in a remarkable 258.14-fold improvement in OFF current. Secondly, we embark on another unexplored avenue in conventional U-Gate TFET by implementing the negative capacitance (NC) effect into it. The NC implementation leads to substantial improvements in ON current and subthreshold swing (SS), with an impressive 4.176-fold enhancement in ION/IOFF and a 2.151-fold reduction in average subthreshold swing (AVSS) (from 33.26 mV/dec to 15.46 mV/dec) compared to the conventional design. In the third and final stage of our optimization strategy, we efficiently combine the benefits of p+-pocket doping and NC implementation. By doing this, we simultaneously enhance the OFF current (improved by 226.91 times), ON current (improved by 1.92 times), ION/IOFF ratio (enhanced by 435.55 times), and AVSS (improved by an outstanding 2.861 times, from 33.48 mV/dec to 11.7 mV/dec), demonstrating the effectiveness of our holistic approach. This comprehensive study sets a new benchmark for U-Gate III-V line TFET optimization, paving the way for advanced applications in low-power digital circuits.

engineering, electrical & electronic,materials science, multidisciplinary,nanoscience & nanotechnology,physics, applied
High-Performance and Low-Power Transistors Based on Anisotropic Monolayer Β - TeO2

Shiying Guo,Hengze Qu,Wenhan Zhou,Shengyuan A. Yang,Yee Sin Ang,Jing Lu,Haibo Zeng,Shengli Zhang

DOI: https://doi.org/10.1103/physrevapplied.17.064010

IF: 4.6

2022-01-01

Physical Review Applied

Abstract:Two-dimensional (2D) semiconductors offer a promising prospect for high-performance and energyefficient devices especially in the sub-10-nm regime. Inspired by the successful fabrication of 2D /3-TeO2 and the high on:off ratio and high air stability of fabricated FETs [Zavabeti et al., Nat. Electron. 4, 277 (2021)], we provide a comprehensive investigation of the electronic structure of monolayer /3-TeO2 and the device performance of sub-10-nm MOSFETs based on this material. The anisotropic electronic structure of monolayer /3-TeO2 plays a critical role in the anisotropy of transport properties for MOSFETs. We show that the 5.2-nm gate-length n-type MOSFET holds an ultrahigh on-state current exceeding 3700 ??A/??m according to International Roadmap for Devices and Systems (IRDS) 2020 goals for highperformance devices, which is benefited by the highly anisotropic electron effective mass. Moreover, monolayer /3-TeO2 MOSFETs can fulfill the IRDS 2020 goals for both high-performance and low-power devices in terms of on-state current, subthreshold swing, delay time, and power-delay product. This study unveils monolayer /3-TeO2 as a promising candidate for ultrascaled devices in future nanoelectronics.
An InGaAs-based Fin-EHBTFET with a heterogate and barrier layer for high performance

Hu Liu,Peifeng Li,Xiaoyu Zhou,Pengyu Wang,Yubin Li,Lei Pan,Wenting Zhang

DOI: https://doi.org/10.35848/1347-4065/ad4e7f

IF: 1.5

2024-06-20

Japanese Journal of Applied Physics

Abstract:This paper proposes a fin electron-hole bilayer tunneling FET with a heterogate and an InAlAs barrier layer (HBF-EHBTFET). The heterogate can suppress off-state leakage caused by point tunneling, while the InAlAs barrier layer prevents source–drain direct tunneling, significantly reducing the off-state current (Ioff). P-type Gaussian doping can not only solve the problem of the inability to generate a hole layer during device fabrication, but also reduce the turn-on voltage of line-tunneling, ultimately increasing on-state current and reducing average subthreshold swing (SSavg). By optimizing parameters of the heterogate and InAlAs barrier layer, HBF-EHBTFET can obtain Ioff of 2.37 × 10−16 A μm−1, SSavg of 17.97 mV dec−1, a cutoff frequency (fT) of 13.2 GHz, and a gain bandwidth product (GBW) of 1.58 GHz. Compared with traditional EHBTFET, HBF-EHBTFET exhibits a reduction in Ioff by four orders of magnitude, a decrease in SSavg by 65.27%, and an increase in fT and GBW by 78.59% and 93.62%, respectively.

physics, applied
A GaSb/In0.4Ga0.6As Heterojunction Z-Shaped Tunnel Field-Effect Transistor with High Performance

Jiarui Bao,Shuyan Hu,Guangxi Hu,Laigui Hu,Ran Liu,Lirong Zheng

DOI: https://doi.org/10.1109/asicon47005.2019.8983662

2019-01-01

Abstract:A GaSb/ln 0.4 Ga 0.6 As heterojunction Z-Shaped TFET is proposed and investigated by a TCAD simulation tool. A low subthreshold swing (16.2 mV/dec) is obtained. A large on- state current, I on (748μA/μm) and a large on-and off-state current ratio, I on /I off (7.48×10 9 ) are achieved for the device under a drain bias of 0.5 V. In addition, the temperature dependence of the proposed device is presented, and it shows that low temperatures favor for I on /I off . It is also revealed that the on-state current can be enhanced by adjusting the device geometry. Moreover, the device can work at a low supply voltage (~0.2 V).

Acetaminophen protein adducts: is acetaminophen to blame?

III-V/Ge MOS Device Technologies for Low Power Integrated Systems

Ultra Low Power Circuits Design Based on III-V Group Heterojunction Tunnel Field Effect Transistor

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

Atomically Thin Van Der Waals Tunnel Field-Effect Transistors and Its Potential for Applications

Analysis of III-V material-based dual source T-channel junction-less TFET with metal implant for improved DC and RF performance

Design, simulation and analog/RF performance evaluation of a hetero-stacked source dual metal T-shaped gate tunnel-FET in thermally variable environments

A Novel Planar InAs/Si Hetero-TFET with Buried Drain Design and Face-tunneling Technique

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

Performance Analysis of Heterojunction and Hetero Dielectric Triple Material Double Gate TFET

Subthreshold Performance Analysis of Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel Field Effect Transistor for Ultra Low Power Applications

Investigation on Tunneling-based Ternary CMOS with Ferroelectric-Gate Field Effect Transistor Using TCAD Simulation

Electrostatically Doped Heterojunction TFET with Enhanced Driving Capabilities for Low Power Applications

Design Optimization of a Silicon-Germanium Heterojunction Negative Capacitance Gate-All-Around Tunneling Field Effect Transistor based on a Simulation Study

Unravelling tacit knowledge: Engagement Strategies of Centres for Excellence in Teaching and Learning

Ultra-high on-current in two-dimensional Tl2O TFETs with tunneling width modulation

Enabling Power-Efficient Designs with III-V Tunnel FETs

Optimizing InGaAs/GaAsSb Staggered Bandgap U-Gate Line TFET With p+-Pocket Implant and Negative Capacitance for Enhanced Performance

High-Performance and Low-Power Transistors Based on Anisotropic Monolayer Β - TeO2

An InGaAs-based Fin-EHBTFET with a heterogate and barrier layer for high performance

A GaSb/In0.4Ga0.6As Heterojunction Z-Shaped Tunnel Field-Effect Transistor with High Performance