Enabling Power-Efficient Designs with III-V Tunnel FETs

Moon Seok Kim,Huichu Liu,Karthik Swaminathan,Xueqing Li,Suman Datta,Vijaykrishnan Narayanan
DOI: https://doi.org/10.1109/csics.2014.6978551
2014-01-01
Abstract:III-V Tunnel FETs (TFET) possess unique characteristics such as steep slope switching, high gm/IDS, uni-directional conduction, and low voltage operating capability. These characteristics have the potential to result in energy savings in both digital and analog applications. In this paper, we provide an overview of the power efficient properties of III-V TFETs and designs at the device, circuit and architectural level.
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