Abstract:Power dissipation is one of the most critical issues for nanoelectronic circuits. For low-power logic applications, Tunnel FET (TFET) and ferroelectric (FE) based negative-capacitance FET (NCFET) can break the fundamental limitation of subthreshold swing in conventional MOSFET. In this talk, from the perspective of mechanism engineering, a new kind of steep-slope device with hybrid operation mechanism is presented with the state-of-the-art comprehensive electric properties, fundamentally addressing the issue of low drive current in conventional TFETs [1-3]. Furthermore, a novel energy-efficient TFET-CMOS hybrid foundry platform based on 300nm CMOS baseline process is also demonstrated for power-constraint AIoT applications [4-5]. For FE-HfO2-based NCFET devices, the possibility of NCFET as a steep-slope device for high-speed and low-voltage operation will be re-assessed based on our proposed dynamic negative capacitance theory [6-7]. Besides, by exploiting the inherent physics of FE polarization switching, this talk will present that ferroelectric-based devices can be utilized for ultralow hardware-cost and high energy-efficient solutions for emerging computing applications. As an example, by utilizing the non-volatile polarization switching dynamics and three-terminal structure of hafnia-based FeFET device, we propose novel Leaky-FeFET based designs to mimic biological neurons [8-9], and a novel FeFET-based time-domain computing in memory system with the record highest area and energy efficiency [10]. By combing the features of FE layer with TFET device, a novel ferroelectric TFET (FeTFET) based content addressable memory cell with only one transistor is proposed and experimentally demonstrated [11], showing its great potential for area- and energy-efficient machine learning applications.

A Novel Energy-Efficient Salicide-Enhanced Tunnel Device Technology Based on 300mm Foundry Platform Towards AIoT Applications

First Foundry Platform Demonstration of Hybrid Tunnel FET and MOSFET Circuits Based on a Novel Laminated Well Isolation Technology

Computing-in-memory Circuits and Cross-Layer Integrated Design and Optimization: from SRAM to FeFET

First Foundry Platform Of Complementary Tunnel-Fets In Cmos Baseline Technology For Ultralow-Power Iot Applications: Manufacturability, Variability And Technology Roadmap

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

Novel Tunnel- and Ferroelectric-based Devices by Mechanism Engineering for Ultra-Low Power Applications

A Novel Self-Aligned Dopant-Segregated Schottky Tunnel-FET with Asymmetry Sidewall Based on Standard CMOS Technology

A Novel TFET-MOSFET Hybrid SRAM for Ultra-Low-Power Applications

Low Power and Temperature-Resilient Compute-In-Memory Based on Subthreshold-FeFET

Reliability Performance of Novel Tunneling Field Effect Transistors Based on Foundry Platform

Comprehensive performance re-assessment of TFETs with a novel design by gate and source engineering from device/circuit perspective

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

Demonstration of Tunneling FETs Based on Highly Scalable Vertical Silicon Nanowires

Ultra-Low-Power and Performance-Improved Logic Circuit Using Hybrid TFET-MOSFET Standard Cells Topologies and Optimized Digital Front-End Process

High performance tunnel field-effect transistor by gate and source engineering.

An Ultra-Low-Voltage Energy-Efficient Dynamic Fully-Regenerative Latch-Based Level-Shifter Circuit with Tunnel-FET & FinFET Devices

Enhancing subthreshold slope and ON-current in a simple iTFET with overlapping gate on source-contact, drain Schottky contact, and intrinsic SiGe-pocket

Enabling New Computation Paradigms with HyperFET - an Emerging Device.

Device physics and design of T-gate Schottky barrier tunnel FET with adaptive operation mechanism

Enabling Power-Efficient Designs with III-V Tunnel FETs

Energy-Efficient Tunneling Field-Effect Transistors for Low-Power Device Applications: Challenges and Opportunities