Abstract:Power dissipation is one of the most critical issues for nanoelectronic circuits. For low-power logic applications, Tunnel FET (TFET) and ferroelectric (FE) based negative-capacitance FET (NCFET) can break the fundamental limitation of subthreshold swing in conventional MOSFET. In this talk, from the perspective of mechanism engineering, a new kind of steep-slope device with hybrid operation mechanism is presented with the state-of-the-art comprehensive electric properties, fundamentally addressing the issue of low drive current in conventional TFETs [1-3]. Furthermore, a novel energy-efficient TFET-CMOS hybrid foundry platform based on 300nm CMOS baseline process is also demonstrated for power-constraint AIoT applications [4-5]. For FE-HfO2-based NCFET devices, the possibility of NCFET as a steep-slope device for high-speed and low-voltage operation will be re-assessed based on our proposed dynamic negative capacitance theory [6-7]. Besides, by exploiting the inherent physics of FE polarization switching, this talk will present that ferroelectric-based devices can be utilized for ultralow hardware-cost and high energy-efficient solutions for emerging computing applications. As an example, by utilizing the non-volatile polarization switching dynamics and three-terminal structure of hafnia-based FeFET device, we propose novel Leaky-FeFET based designs to mimic biological neurons [8-9], and a novel FeFET-based time-domain computing in memory system with the record highest area and energy efficiency [10]. By combing the features of FE layer with TFET device, a novel ferroelectric TFET (FeTFET) based content addressable memory cell with only one transistor is proposed and experimentally demonstrated [11], showing its great potential for area- and energy-efficient machine learning applications.

First Foundry Platform Demonstration of Hybrid Tunnel FET and MOSFET Circuits Based on a Novel Laminated Well Isolation Technology

First Foundry Platform Of Complementary Tunnel-Fets In Cmos Baseline Technology For Ultralow-Power Iot Applications: Manufacturability, Variability And Technology Roadmap

A Novel Energy-Efficient Salicide-Enhanced Tunnel Device Technology Based on 300mm Foundry Platform Towards AIoT Applications

Reliability Performance of Novel Tunneling Field Effect Transistors Based on Foundry Platform

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

Device physics and design of T-gate Schottky barrier tunnel FET with adaptive operation mechanism

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect

A Novel Electrical Isolation Solution for Tunnel FET Integration

Experimental investigation of Quasi-SOI MOSFET for highly scaled devices

Comprehensive performance re-assessment of TFETs with a novel design by gate and source engineering from device/circuit perspective

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

Investigation of Novel Hybrid Channel Complementary FET Scaling Beyond 3-nm Node From Device to Circuit

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

First Experimental Demonstration of Self-Aligned Flip FET (FFET): A Breakthrough Stacked Transistor Technology with 2.5T Design, Dual-Side Active and Interconnects

Monolithic 3D integration of back-end compatible 2D material FET on Si FinFET

High performance tunnel field-effect transistor by gate and source engineering.

Novel Tunnel- and Ferroelectric-based Devices by Mechanism Engineering for Ultra-Low Power Applications

A Novel Self-Aligned Dopant-Segregated Schottky Tunnel-FET with Asymmetry Sidewall Based on Standard CMOS Technology

First Demonstration of Vertical Sandwich GAA TFETs with Self-Aligned High-k Metal Gates and Abrupt Doping Tunneling Junctions

A Novel TFET-MOSFET Hybrid SRAM for Ultra-Low-Power Applications