Abstract:Novel steep‐slope 2D tunnel field‐effect transistors are realized through the van der Waals integration of ferroelectric CuInP2S6 with WSe2/MoS2 heterojunction as well as WSe2 homojunction. These devices break through the fundamental thermionic limit, demonstrating a remarkably minimal subthreshold slope of 14.2 mV dec−1 and an impressive on/off ratio of 108, thus presenting strong potential for future low‐power applications. sPower consumption has emerged as a central concern in the realm of complementary metal‐oxide‐semiconductor (CMOS) technology. Silicon‐based semiconductor devices have now approached the fundamental thermionic limit of the subthreshold swing (SS), which is 60 mV dec−1, as defined by the Boltzmann tyranny. Tunnel field‐effect transistors (TFETs) are considered promising low‐power devices due to the band‐to‐band tunneling mechanism, which effectively avoids the thermionic limit. However, TFETs require the establishment of a staggered band alignment and currently lack effective techniques for adjusting the band offset. Here, by harnessing the robust ferroelectric field inherent to 2D CuInP2S6 (CIPS), a 2D WSe2/MoS2 heterojunction as well as a WSe2 homojunction TFET controlled by ferroelectric gate are presented. The newly developed TFET achieves an ultra‐low SS of 14.2 mV dec−1 at room temperature, an on/off current ratio exceeding 108, and a minimal hysteresis window below 10 mV. Additionally, the device demonstrates gate tunable negative differential resistance (NDR) characteristics with a very large peak‐to‐valley current ratio (PVCR) of 10.56 at room temperature. These findings underscore the significant promise of 2D ferroelectric tuning heterojunction and homojunction for future low‐power electronic applications.

Dual-Junction Field-Effect Transistor with Ultralow Subthreshold Swing Approaching the Theoretical Limit

All-2D-Materials Subthreshold-Free Field-Effect Transistor with Near-Ideal Switching Slope

2D Steep‐Slope Tunnel Field‐Effect Transistors Tuned by van der Waals Ferroelectrics

Ultra-Steep-Slope High-Gain MoS2 Transistors with Atomic Threshold-Switching Gate

Van der Waals negative capacitance transistors

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

Subthermionic field-effect transistors with sub-5 nm gate lengths based on van der Waals ferroelectric heterostructures

Numerical Simulation on Novel Nano-Scale Lateral Double-Gate Tunneling Field Effect Transistor

Two-Dimensional MX 2 Semiconductors for Sub-5 Nm Junctionless Field Effect Transistors

Device performance limit of in-plane monolayer VTe2/WTe2 heterojunction-based field-effect transistors

Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors

Hysteresis-free MoS 2 metal semiconductor field-effect transistors with van der Waals Schottky junction

Atomically Thin Van Der Waals Tunnel Field-Effect Transistors and Its Potential for Applications

Low-dimensional materials-based field-effect transistors

Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors

Sub-10 Nm Two-Dimensional Transistors: Theory and Experiment

Double‐Gate MoS2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

Double‐Gate MoS 2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

Steep-slope vertical-transport transistors built from sub-5 nm Thin van der Waals heterostructures

Sub-5-nm Ultra-thin In$_2$O$_3$ Transistors for High-Performance and Low-Power Electronic Applications

Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope