Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope

Jingli Wang,Lejuan Cai,Jiewei Chen,Xuyun Guo,Yuting Liu,Zichao Ma,Zhengdao Xie,Hao Huang,Mansun Chan,Ye Zhu,Lei Liao,Qiming Shao,Yang Chai

DOI: https://doi.org/10.1126/sciadv.abf8744

IF: 13.6

2021-10-29

Science Advances

Abstract:van der Waals metal gate to two-dimensional semiconductors enables low-power electronic devices.

multidisciplinary sciences

What problem does this paper attempt to address?

Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors

Jingyi Ma,Xinyu Chen,Yaochen Sheng,Ling Tong,Xiaojiao Guo,Minxing Zhang,Chen Luo,Lingyi Zong,Yin Xia,Chuming Sheng,Yin Wang,Saifei Gou,Xinyu Wang,Xing Wu,Peng Zhou,David Wei Zhang,Chenjian Wu,Wenzhong Bao

DOI: https://doi.org/10.1016/j.jmst.2021.08.021

2021-01-01

Journal of Material Science and Technology

Abstract:The investigation of two-dimensional(2D)materials has advanced into practical device applications,such as cascaded logic stages.However,incompatible electrical properties and inappropriate logic levels re-main enormous challenges.In this work,a doping-free strategy is investigated by top gated(TG)MoS2 field-effect transistors(FETs)using various metal gates(Au,Cu,Ag,and Al).These metals with different work functions provide a convenient tuning knob for controlling threshold voltage(Vth)for MoS2 FETs.For instance,the Al electrode can create an extra electron doping(n-doping)behavior in the MoS2 TG-FETs due to a dipole effect at the gate-dielectric interface.In this work,by achieving matched electrical properties for the load transistor and the driver transistor in an inverter circuit,we successfully demon-strate wafer-scale MoS2 inverter arrays with an optimized inverter switching threshold voltage(VM)of 1.5 V and a DC voltage gain of 27 at a supply voltage(VDD)of 3 V.This work offers a novel scheme for the fabrication of fully integrated multistage logic circuits based on wafer-scale MoS2 film.
Manipulating the Electrical Characteristics of Two-Dimensional Semiconductor Transistors by Gate Engineering

Jingyi Ma,Ling Tong,Xiaojiao Guo,Xinyu Chen,Minxing Zhang,Chenjian Wu,Wenzhong Bao

DOI: https://doi.org/10.1109/edtm50988.2021.9420915

2021-01-01

Abstract:Various methods have been investigated to manipulate the electrical properties of MoS2 transistors to achieve applicable logic levels, which are essential for integrated multistage logic circuits. A doping-free strategy by using metal gates with different work functions is demonstrated to modulate threshold voltage (V-TH), which is critical for optimizing the matching levels of electrical properties. The optimized inverters show controllable inverter threshold voltages from 0.2 V to 0.6 V and the obtained voltage gain is over 35.
Dual-Junction Field-Effect Transistor with Ultralow Subthreshold Swing Approaching the Theoretical Limit

Xinhao Chen,Shasha Li,Lingyu Zhu,Jingbo Li,Yiming Sun,Nengjie Huo

DOI: https://doi.org/10.1021/acsami.3c17572

IF: 9.5

2024-04-30

ACS Applied Materials & Interfaces

Abstract:Metal-oxide-semiconductor field-effect transistors as basic electronic devices of integrated circuits have been greatly developed and widely used in the past decades. However, as the thickness of the conducting channel decreases, the interface electronic scattering between the gate oxide layer and the channel significantly impacts the performance of the transistor. To address this issue, van der Waals heterojunction field-effect transistors (vdWJFETs) have been proposed using two-dimensional...

materials science, multidisciplinary,nanoscience & nanotechnology
A new opportunity for two-dimensional van der Waals heterostructures: making steep-slope transistors

Juan Lv,Jing Pei,Yuzheng Guo,Jian Gong,Huanglong Li

DOI: https://doi.org/10.1002/adma.201906000

2019-08-26

Abstract:The use of a foreign metallic cold source (CS) has recently been proposed as a promising approach toward the steep-slope field-effect-transistor (FET). In addition to the selection of source material with desired density of states-energy relation (D(E)), engineering the source: channel interface for gate-tunable channel-barrier is crucial to a CS-FET. However, conventional metal: semiconductor (MS)-interfaces generally suffer from strong Fermi-level-pinning due to the inevitable chemical disorder and defect-induced gap states, precluding the gate-tunability of the barriers. By comprehensive materials and device modeling at the atomic-scale, we report that the two-dimensional (2D)-van der Waals (vdW)-MS-interfaces, with their atomic sharpness and cleanness, can be considered as general ingredients for CS-FETs. As test cases, InSe-based n-type FETs are studied. It is found that graphene can be spontaneously p-type doped along with slightly opened bandgap around the Dirac-point by interfacing with InSe, resulting in super-exponentially decaying hot carrier density with increasing n-type channel-barrier. Moreover, the D(E) relations suggest that 2D-transition-metal-dichalcogenides and 2D-transition-metal-carbides are rich libraries of CS materials. Both graphene and H-TaTe2 CSs lead to subthreshold swing below 60 mV/decade. This work broadens the application potentials of 2D-vdW-MS-heterostructures and serves as a springboard for more studies on low-power electronics based on 2D materials.

Materials Science
Engineering Top Gate Stack for Wafer-Scale Integrated Circuit Fabrication Based on Two-Dimensional Semiconductors

Jingyi Ma,Xinyu Chen,Xinyu Wang,Jihong Bian,Ling Tong,Honglei Chen,Xiaojiao Guo,Yin Xia,Xinzhi Zhang,Zihan Xu,Congrong He,Jialing Qu,Peng Zhou,Chenjian Wu,Xing Wu,Wenzhong Bao

DOI: https://doi.org/10.1021/acsami.1c22990

2022-02-25

Abstract:In recent years, two-dimensional (2D) semiconductors have attracted considerable attention from both academic and industrial communities. Recent research has begun transforming from constructing basic field-effect transistors (FETs) into designing functional circuits. However, device processing remains a bottleneck in circuit-level integration. In this work, a non-destructive doping strategy is proposed to modulate precisely the threshold voltage (VTH) of MoS2-FETs in a wafer scale. By inserting an Al interlayer with a varied thickness between the high-k dielectric and the Au top gate (TG), the doping could be controlled. The full oxidation of the Al interlayer generates a surplus of oxygen vacancy (Vo) in the high-k dielectric layer, which further leads to stable electron doping. The proposed strategy is then used to optimize an inverter circuit by matching the electrical properties of the load and driver transistors. Furthermore, the doping strategy is used to fabricate digital logic blocks with desired logic functions, which indicates its potential to fabricate fully integrated multistage logic circuits based on wafer-scale 2D semiconductors.

materials science, multidisciplinary,nanoscience & nanotechnology
Low-power MoS2 metal–semiconductor field effect transistors (MESFETs) based on standard metal–semiconductor contact

Chengzhi Yang,Cheng Jiang,Wencheng Niu,Dandan Hao,Hao Huang,Houqiang Fu,Jinshui Miao,Xingqiang Liu,Xuming Zou,Fukai Shan,Zhenyu Yang

DOI: https://doi.org/10.1063/5.0174509

IF: 4

2024-02-12

Applied Physics Letters

Abstract:With the popularization of electronic devices and the demand for portability, low-power consumption has become crucial for integrated circuit chips. Two-dimensional (2D) semiconductors offer significant potential in constructing low-power devices due to their ultrathin thickness, enabling fully depletion operation. However, fabricating these 2D low-power devices, such as negative-capacitance transistors or tunneling transistors, often requires multiple layers of gate dielectrics or channel band engineering, adding complexity to the manufacturing process and posing challenges for their integration with silicon technology. In this work, we have developed low-power MoS2 metal–semiconductor field effect transistors utilizing a standard metal–semiconductor contact, which eliminates the need for gate dielectrics and semiconductor heterojunctions. It demonstrates a sharp subthreshold slope (SS ∼ 64 mV/dec), a minimum operating gate voltage range (−0.5 ∼ 1 V), a minimum current hysteresis (3.69 mV), and a stable threshold voltage close to 0 V (Vth ∼ −0.27 V). Moreover, we implemented an inverter circuit with a high voltage gain of 47.

physics, applied
2D Semimetal with Ultrahigh Work Function for Sub-0.1 V Threshold Voltage Operation of Metal-Semiconductor Field-Effect Transistors

Tianjiao Zhang,Jialei Miao,Chun Huang,Zheng Bian,Maoxin Tian,Haohan Chen,Ruihuan Duan,Lin Wang,Zheng Liu,Jingsi Qiao,Yang Xu,Bin Yu,Yuda Zhao

DOI: https://doi.org/10.1016/j.matdes.2023.112035

IF: 9.417

2023-01-01

Materials & Design

Abstract:Metal-semiconductor field-effect transistors (MESFETs) offer the advantages of efficient gate control and low power consumption due to the large junction capacitance. However, the strong Fermi-level pinning caused by the metal-induced gap states makes it a great challenge to build a high-quality Schottky junction with a large energy barrier and low leakage current. Moreover, the upper limit of the work function of conventional metals is around 5 eV, which prevents the formation of a wide depletion region and the reduction of power consumption. In this work, 2D semimetals with high work function have been used as the gate to fabricate 2D van der Waals MESFETs. Compared with PtSe2 and PdSe2, TiS2 with ultrahigh work function of 6.6 eV forms the largest Schottky barrier height with MoS2. And TiS2/MoS2 MESFETs display a sub-0.1 V threshold voltage owing to the large built-in potential and exhibit a small subthreshold swing of 73 mV/dec. The tuning of the channel carrier density from the back gate can further optimize the device performance and provide a strategy to build AND logic gate in a dual-gated transistor. Our work successfully demonstrates the use of high-work-function 2D semimetal to realize high-performance MESFET with low power consumption.& COPY; 2023 The Author(s). Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
A New Opportunity for 2D van der Waals Heterostructures: Making Steep‐Slope Transistors

Juan Lyu,Jing Pei,Yuzheng Guo,Jian Gong,Huanglong Li

DOI: https://doi.org/10.1002/adma.201906000

IF: 29.4

2019-11-28

Advanced Materials

Abstract:The use of a foreign metallic cold source (CS) has recently been proposed as a promising approach toward the steep‐slope field‐effect‐transistor (FET). In addition to the selection of source material with desired density of states–energy relation (D(E)), engineering the source:channel interface for gate‐tunable channel‐barrier is crucial to CS‐FETs. However, conventional metal:semiconductor (MS) interfaces generally suffer from strong Fermi‐level pinning due to the inevitable chemical disorder and defect‐induced gap states, precluding the gate tunability of the barriers. By comprehensive materials and device modeling at the atomic scale, it is reported that 2D van der Waals (vdW) MS interfaces, with their atomic sharpness and cleanness, can be considered as general ingredients for CS‐FETs. As test cases, InSe‐based n‐type FETs are studied. It is found that graphene can be spontaneously p‐type doped along with slightly opened bandgap around the Dirac‐point by interfacing with InSe, resulting in superexponentially decaying hot carrier density with increasing n‐type channel‐barrier. Moreover, the D(E) relations suggest that 2D transition‐metal dichalcogenides and 2D transition‐metal carbides are a rich library of CS materials. Graphene, Cd3C2, T‐VTe2, H‐VTe2, and H‐TaTe2 CSs lead to subthreshold swing below 60 mV dec−1. This work broadens the application potentials of 2D vdW MS heterostructures and serves as a springboard for more studies on low‐power electronics based on 2D materials.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Hysteresis-free MoS 2 metal semiconductor field-effect transistors with van der Waals Schottky junction

Da Wan,Qixia Wang,Hao Huang,Bei Jiang,Chen Chen,Zhenyu Yang,Guoli Li,Chuansheng Liu,Xingqiang Liu,Lei Liao

DOI: https://doi.org/10.1088/1361-6528/abd2e8

IF: 3.5

2021-01-06

Nanotechnology

Abstract:Abstract Hysteresis-free and steep subthreshold swing (SS) are essential for low-power reliable electronics. Herein, MoS 2 metal semiconductor field-effect transistors are fabricated with GeSe/MoS 2 van der Waals Schottky junction as a local gate, in which the rectification behavior of the heterojunction offers the modulation of channel carriers. The trap-free gate interface enables the hysteresis-free characteristics of the transistors, and promises an ideal SS of 64 mV/dec at room temperature. All the devices operate with a low threshold voltage less than −1 V with desirable saturation behavior. An OR logic gate is constructed with the dual-gated MoS 2 transistors by varying the back and top gate voltage. The strategy present here is promising for the design of low-power digital electronics based on 2D materials.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Two dimensional semiconducting materials for ultimately scaled transistors

Tianyao Wei,Zichao Han,Xinyi Zhong,Qingyu Xiao,Tao Liu,Du Xiang

DOI: https://doi.org/10.1016/j.isci.2022.105160

IF: 5.8

2022-10-21

iScience

Abstract:Two dimensional (2D) semiconductors have been established as promising candidates to break through the short channel effect that existed in Si metal-oxide-semiconductor field-effect-transistor (MOSFET), owing to their unique atomically layered structure and dangling-bond-free surface. The last decade has witnessed the significant progress in the size scaling of 2D transistors by various approaches, in which the physical gate length of the transistors has shrank from micrometer to sub-one nanometer with superior performance, illustrating their potential as a replacement technology for Si MOSFETs. Here, we review state-of-the-art techniques to achieve ultra-scaled 2D transistors with novel configurations through the scaling of channel, gate, and contact length. We provide comprehensive views of the merits and drawbacks of the ultra-scaled 2D transistors by summarizing the relevant fabrication processes with the corresponding critical parameters achieved. Finally, we identify the key opportunities and challenges for integrating ultra-scaled 2D transistors in the next-generation heterogeneous circuitry.

multidisciplinary sciences
Gate-controlled Reversible Rectifying Behaviour in Tunnel Contacted Atomically-Thin MoS2 Transistor

Xiao-Xi Li,Zhi-Qiang Fan,Pei-Zhi Liu,Mao-Lin Chen,Xin Liu,Chuan-Kun Jia,Dong-Ming Sun,Xiang-Wei Jiang,Zheng Han,Vincent Bouchiat,Jun-Jie Guo,Jian-Hao Chen,Zhi-Dong Zhang

DOI: https://doi.org/10.1038/s41467-017-01128-9

IF: 16.6

2017-01-01

Nature Communications

Abstract:Atomically thin two-dimensional semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their applications as compliant materials for integration in logic devices. Here, we devise a reverted stacking technique to intercalate a wrinkle-free boron nitride tunnel layer between MoS 2 channel and source drain electrodes. Vertical tunnelling of electrons therefore makes it possible to suppress the Schottky barriers and Fermi level pinning, leading to homogeneous gate-control of the channel chemical potential across the bandgap edges. The observed features of ambipolar pn to np diode, which can be reversibly gate tuned, paves the way for future logic applications and high performance switches based on atomically thin semiconducting channel.
2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

Tania Roy,Mahmut Tosun,Mark Hettick,Geun Ho Ahn,Chenming Hu,Ali Javey

DOI: https://doi.org/10.1063/1.4942647

IF: 4

2016-02-22

Applied Physics Letters

Abstract:Two-dimensional materials present a versatile platform for developing steep transistors due to their uniform thickness and sharp band edges. We demonstrate 2D-2D tunneling in a WSe2/SnSe2 van der Waals vertical heterojunction device, where WSe2 is used as the gate controlled p-layer and SnSe2 is the degenerately n-type layer. The van der Waals gap facilitates the regulation of band alignment at the heterojunction, without the necessity of a tunneling barrier. ZrO2 is used as the gate dielectric, allowing the scaling of gate oxide to improve device subthreshold swing. Efficient gate control and clean interfaces yield a subthreshold swing of ∼100 mV/dec for >2 decades of drain current at room temperature, hitherto unobserved in 2D-2D tunneling devices. The subthreshold swing is independent of temperature, which is a clear signature of band-to-band tunneling at the heterojunction. A maximum switching ratio ION/IOFF of 107 is obtained. Negative differential resistance in the forward bias characteristics is observed at 77 K. This work bodes well for the possibilities of two-dimensional materials for the realization of energy-efficient future-generation electronics.

physics, applied
Modifying the Power and Performance of 2-Dimensional MoS 2 Field Effect Transistors

Fulin Zhuo,Jie Wu,Binhong Li,Moyang Li,Chee Leong Tan,Zhongzhong Luo,Huabin Sun,Yong Xu,Zhihao Yu

DOI: https://doi.org/10.34133/research.0057

IF: 11

2023-01-01

Research

Abstract:Over the past 60 years, the semiconductor industry has been the core driver for the development of information technology, contributing to the birth of integrated circuits, Internet, artificial intelligence, and Internet of Things. Semiconductor technology has been evolving in structure and material with co-optimization of performance–power–area–cost until the state-of-the-art sub-5-nm node. Two-dimensional (2D) semiconductors are recognized by the industry and academia as a hopeful solution to break through the quantum confinement for the future technology nodes. In the recent 10 years, the key issues on 2D semiconductors regarding material, processing, and integration have been overcome in sequence, making 2D semiconductors already on the verge of application. In this paper, the evolution of transistors is reviewed by outlining the potential of 2D semiconductors as a technological option beyond the scaled metal oxide semiconductor field-effect transistors. We mainly focus on the optimization strategies of mobility ( μ ), equivalent oxide thickness ( EOT ), and contact resistance ( R C ), which enables high ON current ( I on ) with reduced driving voltage ( V dd ). Finally, we prospect the semiconductor technology roadmap by summarizing the technological development of 2D semiconductors over the past decade.

multidisciplinary sciences
Double‐Gate MoS2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

Jiali Yi,Xingxia Sun,Chenguang Zhu,Shengman Li,Yong Liu,Xiaoli Zhu,Wenxia You,Delang Liang,Qin Shuai,Yanqing Wu,Dong Li,Anlian Pan

DOI: https://doi.org/10.1002/adma.202101036

IF: 29.4

2021-01-01

Advanced Materials

Abstract:Multifunctional reconfigurable devices, with higher information capacity, smaller size, and more functions, are urgently needed and draw most attention in frontiers in information technology. 2D semiconductors, ascribing to ultrathin body and easy electrostatic control, show great potential in developing reconfigurable functional units. This work proposes a novel double-gate field-effect transistor architecture with equal top and bottom gate (TG and BG) and realizes flexible optimization of the subthreshold swing (SS) and threshold voltage (V-TH). While the TG and BG are used simultaneously, as a single gate to drive the transistor, ultralow average SS value of 65.5 mV dec(-1) can be obtained in a large current range over 10(4), enabling the application in high gain inverter. While one gate is used to initialize the channel doping, full logic swing inverter circuit with high noise margin (over 90%) is demonstrated. Such device prototype is further extended for designing reconfigurable logic applications and can be dynamically switched and well maintained between binary and ternary logics. This study provides important concept and device prototype for future multifunctional logic applications.
Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors

Bin Peng,Wei Zheng,Jiantao Qin,Wanli Zhang

DOI: https://doi.org/10.3390/ma11030430

IF: 3.4

2018-03-15

Materials

Abstract:Two-dimensional transitional metal dichalcogenide (TMDC) field-effect transistors (FETs) are proposed to be promising for devices scaling beyond silicon-based devices. We explore the different effective mass and bandgap of the channel materials and figure out the possible candidates for high-performance devices with the gate length at 5 nm and below by solving the quantum transport equation self-constantly with the Poisson equation. We find that out of the 14 compounds, MoS₂, MoSe₂, and MoTe₂ may be used in the devices to achieve a good subthreshold swing and a reasonable current ON-OFF ratio and delay. Our work points out the direction of further device optimization for experiments.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Subthermionic field-effect transistors with sub-5 nm gate lengths based on van der Waals ferroelectric heterostructures

Feng Wang,Jia Liu,Wenhao Huang,Ruiqing Cheng,Lei Yin,Junjun Wang,Marshet Getaye Sendeku,Yu Zhang,Xueying Zhan,Chongxin Shan,Zhenxing Wang,Jun He

DOI: https://doi.org/10.1016/j.scib.2020.04.019

IF: 18.9

2020-09-01

Science Bulletin

Abstract:Overcoming the sub-5 nm gate length limit and decreasing the power dissipation are two main objects in the electronics research field. Besides advanced engineering techniques, considering new material systems may be helpful. Here, we demonstrate two-dimensional (2D) subthermionic field-effect transistors (FETs) with sub-5 nm gate lengths based on ferroelectric (FE) van der Waals heterostructures (vdWHs). The FE vdWHs are composed of graphene, MoS2, and CuInP2S6 acting as 2D contacts, channels, and ferroelectric dielectric layers, respectively. We first show that the as-fabricated long-channel device exhibits nearly hysteresis-free subthermionic switching over three orders of magnitude of drain current at room temperature. Further, we fabricate short-channel subthermionic FETs using metallic carbon nanotubes as effective gate terminals. A typical device shows subthermionic switching over five-to-six orders of magnitude of drain current with a minimum subthreshold swing of 6.1 mV/dec at room temperature. Our results indicate that 2D materials system is promising for advanced highly-integrated energy-efficient electronic devices.

multidisciplinary sciences
Two-Dimensional MX 2 Semiconductors for Sub-5 Nm Junctionless Field Effect Transistors

Bin Peng,Wei Zheng,Jiantao Qin,Wanli Zhang

DOI: https://doi.org/10.3390/ma11030430

IF: 3.4

2018-01-01

Materials

Abstract:Two-dimensional transitional metal dichalcogenide (TMDC) field-effect transistors (FETs) are proposed to be promising for devices scaling beyond silicon-based devices. We explore the different effective mass and bandgap of the channel materials and figure out the possible candidates for high-performance devices with the gate length at 5 nm and below by solving the quantum transport equation self-constantly with the Poisson equation. We find that out of the 14 compounds, MoS2, MoSe2, and MoTe2 may be used in the devices to achieve a good subthreshold swing and a reasonable current ON-OFF ratio and delay. Our work points out the direction of further device optimization for experiments.
2D Short‐Channel Tunneling Transistor Relying on Dual‐Gate Modulation for Integrated Circuits Application

Ling Li,Qunrui Deng,Yiming Sun,Jielian Zhang,Tao Zheng,Wenhai Wang,Yuan Pan,Wei Gao,Jianting Lu,Jingbo Li,Nengjie Huo

DOI: https://doi.org/10.1002/adfm.202304591

IF: 19

2023-07-09

Advanced Functional Materials

Abstract:The short‐channel tunneling transistor comprising all 2D components is developed, exhibiting high switching performance due to the energy band modulation of vertical heterojunction through the dual‐gates. Leveraging the unique short‐channel and tunneling mechanism, it can circumvent the general issues of voltage spikes and long reverse recovery time, realizing an access to high‐frequency integrated circuits (IC) interface. With continuous size scaling, the surface dangling bonds and short‐channel effects will degrade silicon based transistor performance. Thus, it is of great importance to seek new channel materials and transistor architectures to further continue Moore's law. Herein, a new ultra‐thin short‐channel tunneling transistor is developed comprising all 2D‐ components. Distinct from usual 2D planar transistor, this device is configured with vertical MoS2/WSe2 junction and in‐plane WSe2 channel, the switch states are realized by the gate‐regulated barrier height of heterojunction, enabling the transition of transport mechanism between thermionic‐emission and tunneling. Under dual‐gate configuration, the transistor exhibits high performance with drive current of 4.58 μA, on/off ratio of 4 × 107, subthreshold swing (SS) of 97 mV decade−1 and drain‐induced barrier lowering (DIBL) of 12 mV V−1, that can meet the requirement of logical applications in integrated circuits (IC). Taking advantage of the high‐speed tunneling current and unique short‐channel architecture, the device overcomes the issues of voltage spikes and long reverse recovery time that exist in usual electric components, and thus gains an access to the IC interface. This work provides a proof‐of‐concept transistor architecture relying on dual‐gate modulation, opening up a promising perspective for next generation low‐power, high‐density, and large‐scale IC technologies.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
A next-generation transistor with low supply voltage operation constructed based on 2D materials' metal-semiconductor phase transition

Xingyi Tan,Hengze Qu,Jialin Yang,Shengli Zhang,Hua-Hua Fu

DOI: https://doi.org/10.1039/d4mh00662c

2024-08-15

Abstract:Power dissipation, a fundamental limitation for realizing high-performance electronic devices, may be effectively reduced by an external supply voltage. However, a small supply voltage simultaneously brings another serious challenge, that is, a remarkable device inability in transistors. To deal with this issue, we propose a new transistor design based on the metal-semiconductor phase transition in a AsGeC3 monolayer, which provides a switching mechanism of band-to-band tunneling at on- and off-states by gate-voltage modulation. Our first-principles calculations uncover that the monolayer AsGeC3 field-effect transistors (FETs) with gate lengths of 5, 4, and 3 nm may meet well the requirements for on-state current (Ion), power dissipation (PDP), and delay period (τ) as outlined by the International Technology Roadmap for Semiconductors (ITRS) in 2013 to achieve higher performance by the year 2028. Importantly, high performances are achieved only under a very low supply voltage (VDD = 0.05/0.10 V). Significantly, the AsGeC3 FETs exhibit remarkably lower values of both PDP and τ than those of nearly all the transistors reported up to date. These novel 2D metal-semiconductor phase transition-based FETs open up a new door for designing next-generation low-power electronic devices.
Double‐Gate MoS 2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

Jiali Yi,Xingxia Sun,Chenguang Zhu,Shengman Li,Yong Liu,Xiaoli Zhu,Wenxia You,Delang Liang,Qin Shuai,Yanqing Wu,Dong Li,Anlian Pan

DOI: https://doi.org/10.1002/adma.202101036

IF: 29.4

2021-05-31

Advanced Materials

Abstract:Multifunctional reconfigurable devices, with higher information capacity, smaller size, and more functions, are urgently needed and draw most attention in frontiers in information technology. 2D semiconductors, ascribing to ultrathin body and easy electrostatic control, show great potential in developing reconfigurable functional units. This work proposes a novel double-gate field-effect transistor architecture with equal top and bottom gate (TG and BG) and realizes flexible optimization of the subthreshold swing (SS) and threshold voltage (VTH). While the TG and BG are used simultaneously, as a single gate to drive the transistor, ultralow average SS value of 65.5 mV dec−1 can be obtained in a large current range over 104, enabling the application in high gain inverter. While one gate is used to initialize the channel doping, full logic swing inverter circuit with high noise margin (over 90%) is demonstrated. Such device prototype is further extended for designing reconfigurable logic applications and can be dynamically switched and well maintained between binary and ternary logics. This study provides important concept and device prototype for future multifunctional logic applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope

Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors

Manipulating the Electrical Characteristics of Two-Dimensional Semiconductor Transistors by Gate Engineering

Dual-Junction Field-Effect Transistor with Ultralow Subthreshold Swing Approaching the Theoretical Limit

A new opportunity for two-dimensional van der Waals heterostructures: making steep-slope transistors

Engineering Top Gate Stack for Wafer-Scale Integrated Circuit Fabrication Based on Two-Dimensional Semiconductors

Low-power MoS2 metal–semiconductor field effect transistors (MESFETs) based on standard metal–semiconductor contact

2D Semimetal with Ultrahigh Work Function for Sub-0.1 V Threshold Voltage Operation of Metal-Semiconductor Field-Effect Transistors

A New Opportunity for 2D van der Waals Heterostructures: Making Steep‐Slope Transistors

Hysteresis-free MoS 2 metal semiconductor field-effect transistors with van der Waals Schottky junction

Two dimensional semiconducting materials for ultimately scaled transistors

Gate-controlled Reversible Rectifying Behaviour in Tunnel Contacted Atomically-Thin MoS2 Transistor

2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

Modifying the Power and Performance of 2-Dimensional MoS 2 Field Effect Transistors

Double‐Gate MoS2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors

Subthermionic field-effect transistors with sub-5 nm gate lengths based on van der Waals ferroelectric heterostructures

Two-Dimensional MX 2 Semiconductors for Sub-5 Nm Junctionless Field Effect Transistors

2D Short‐Channel Tunneling Transistor Relying on Dual‐Gate Modulation for Integrated Circuits Application

A next-generation transistor with low supply voltage operation constructed based on 2D materials' metal-semiconductor phase transition

Double‐Gate MoS 2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits