Abstract:We perform a comparative study (both for device and circuit simulations) of three carbon nanotube tunneling field-effect transistor (CNT-TFET) designs: high-K gate dielectric TFETs (HK-TFETs), hetero gate dielectric TFETs (HTFETs) and a novel CNT-TFET-based combination of light doping and hetero gate dielectric TFETs (LD-HTFETs). At device level, the effects of channel and gate dielectric engineering on the switching and high-frequency characteristics for CNT-TFET have been theoretically investigated using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions solved self-consistently with Poisson's equations. It is revealed that the proposed LD-HTFET structure can significantly reduce leakage current, enhance control ability of the gate on the channel, improve the switching speed, and is more suitable for use in low-power, high-frequency circuits. At circuit level, using HSPICE with look-up table-based Verilog-A models, the performance and reliability of CNT-TFET logic gate circuits is evaluated on the basis of power consumption, average delay, stability, energy consumption and power-delay product (PDP). Simulation results indicate that, compared to a traditional CNT-TFET-based circuit, the one based on LD-HTFET has a significantly better performance (static noise margin, energy, delay, PDP). It is also observed that our proposed design exhibits better robustness under different operational conditions by considering power supply voltage and temperature variations. Our results may be useful for designing and optimizing CNTFET devices and circuits.

Tunneling Leakage Current Reduction In Junctionless Transistors Using A Lightly Doped Region Near Drain

Suppression of Tunneling Leakage Current in Junctionless Nanowire Transistors

Tunneling Leakage Current of Gate-All-Around Nanowire Junctionless Transistor with an Auxiliary Gate

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

Performance enhancement of nanotube junctionless FETs with low doping concentration rings

Investigation of the Junctionless Line Tunnel Field-Effect Transistor

Numerical Simulation on Novel Nano-Scale Lateral Double-Gate Tunneling Field Effect Transistor

Analytical drain current model for long-channel double-gate negative capacitance junctionless transistors using Landau theory

A Short Channel Double-Gate Junctionless Transistor Model Including the Dynamic Channel Boundary Effect

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

Current Enhanced PNPN Tunnel Field-Effect Transistor with L-shaped Gate

A Junctionless Nanowire Transistor with a Dual-Material Gate

Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

A Compact Quasi-Static Terminal Charge and Drain Current Model for Double-Gate Junctionless Transistors and Its Circuit Validation

Investigation of Light Doping and Hetero Gate Dielectric Carbon Nanotube Tunneling Field-Effect Transistor for Improved Device and Circuit-Level Performance

Analysis of gate-induced drain leakage in gate-all-around nanowire transistors

Junctionless nanowire MOSFET with dynamic threshold voltage operation methodology

Simulation-Based Study of Negative Capacitance Double-Gate Junctionless Transistors with Ferroelectric Gate Dielectric

Experimental Investigation of a Novel Junction-Modulated Hetero-Layer Tunnel FET with the Striped Gate for Low Power Applications.