Abstract:To increase the gate swing, a GaN-based high-electron-mobility transistor with a junction barrier Schottky gate (JBS-HEMT) was proposed. Compared to conventional p-GaN Schottky gate HEMTs (Conv-HEMT), the high electric field at the surface is transferred to the pn junction inside the body, and the extended depletion region of the pn junction shields the surface Schottky contact interface for the JBS-HEMT. After fitting the model to the reported device, the proposed JBS-HEMT was simulated and optimized using the Sentaurus TCAD tool. The simulation results of the optimized JBS-HEMT demonstrate a high gate breakdown voltage (17.6V), which is 158.5% higher than the gate breakdown voltage of the Conv-HEMT (11.1V) and a lower gate leakage current of six orders of magnitude than the Conv-HEMT at the gate-to-source voltage of 10V. The proposed JBS-HEMT exhibits a positive threshold voltage (1.68V) and excellent threshold voltage stability, and the maximum threshold voltage drift of the JBS-HEMT (+0.237V) is smaller than that of the Conv-HEMT (-0.714V) under gate stress conditions. The peak transconductance of the JBS-HEMT (186mS/mm) at athe drain-to-source voltage of 10V showed almost no reduction compared to the Conv-HEMT (189mS/mm), which solves the problem of decreased transconductance capability of the reported GaN HEMT with a p-n junction gate (PNJ-HEMT). It was confirmed that the JBS-HEMT has excellent gate stability and potential for power electronics applications.

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