Abstract:Objective: In our previous publication, a core-structured field effect transistor (CoreFET) device shows field effect transistor (FET) behavior. In this work, we investigated factors such as the thickness of the film and the channel on the conductivity of the device in order to optimize the geometry to provide guidance on the fabrication of the device with the best performance. Methods: This study uses Silvaco ATLAS numerical simulation software to investigate the performance of CoreFET. The effects of the thickness of the dielectric layer, SiO2, and the distance between the drain and source (channel length) on the conductivity of the semi-conductor indium gallium zinc oxide (IGZO) have been studied. The flat FET models with the same parameters were used for comparison. Results: Our simulation results demonstrate a directed correlation between the optimized conductivity of the device and the thickness of the dielectric material, as well as the length of the channel. Enhanced sensitivity is achievable by employing a thinner dielectric layer and a narrower channel. Conclusion: According to the results, the device can achieve better performance by optimizing the thickness of the insulator and the gap distance between drain and source electrodes. The remarkable similarity between them indicates that the FET effect remained largely unaffected by variations in FET shape. This observation suggests a consistent outcome across FETs, reinforcing the notion that CoreFET exhibits comparable results as those of film FETs. This finding significantly broadens the scope of CoreFET applications.

Influence of Corner Effect on Performance of Three-Dimensional Tunnel Field-Effect Transistor

Three-dimensional Modeling of Core-structured Field Effect Transistor

High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure

A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect

Multi-state Tunnel Field Effect Transistor Based on Face Tunneling with Gate-Source Overlap

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

Characteristics of Cylindrical Surrounding-Gate GaAs X Sb 1-X /in Y Ga 1-Y As Heterojunction Tunneling Field-Effect Transistors

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

Comparison of the Performance Improvement for the Two Novel SOI-tunnel FETs with the Lateral Dual-Gate and Triple-Gate

Corner Effects in Double-Gate/gate-all-around MOSFETs

The Application of Gate-Drain Underlap Architecture in TFET-based Inverters

Double-gate-all-around Tunnel Field-Effect Transistor

A Simulation Study of Vertical Tunnel Field Effect Transistors

Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials

Performance studies in nanowire field-effect transistors with different cross sections

Reduction of Corner Effect in ZG-ES-TFET for Improved Electrical Performance and its Reliability Analysis in the Presence of Traps

Corner Effects In Vertical Mosfets

Lateral Energy Band Profile Modulation in Tunnel Field Effect Transistors Based on Gate Structure Engineering

Triple-Gate Fin Field Effect Transistors with Fin-Thickness Optimization to Reduce the Impact of Fin Line Edge Roughness

A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor

T-Shaped III-V Heterojunction Tunneling Field-Effect Transistor