Abstract:Tunnel field-effect transistors (TFETs) are promising for use in ultralow-power applications owing to their distinct band-to-band tunneling operation. However, the ON-state current of these Si-based tunnel devices is considerably lower than that of MOSFETs. Furthermore, a high-<inline-formula> <tex-math notation="LaTeX">$\kappa $ </tex-math></inline-formula> dielectric is used as a gate insulator or spacer to increase the TFET’s tunneling field strength; this usually causes fringe-induced barrier lowering and deterioration of its subthreshold characteristics. Here, in this paper, a gate field plate TFET (GFP-TFET) structure is proposed to enhance the driving current and suppress the current kink induced by fringe-induced barrier lowering. A detailed investigation into the effects of a gate field plate on TFET performance was conducted with the help of extensive device simulations. The gate oxide and gate field plate oxide could be used to tailor the electric field lines to increase the electric field in the tunnel junction. Meanwhile, the fringing field concentration was reduced by using a metal with a relatively high work function as the field plate electrode. Thus, the electric field strength decreased near the gate edge and increased in the channel. The GFP-TFET exhibited high driving current and low subthreshold characteristics at the cost of a reduction in cutoff frequency. A GFP-TFET structure with optimized parameters had a <inline-formula> <tex-math notation="LaTeX">$10^{3}\times $ </tex-math></inline-formula> higher ON-state current compared with a normal silicon tunnel FET. The minimum subthreshold swing decreased from 146.3 to 21.4 mV/dec and the ON/OFF current ratio increased from <inline-formula> <tex-math notation="LaTeX">$10^{7}$ </tex-math></inline-formula> to <inline-formula> <tex-math notation="LaTeX">$10^{13}$ </tex-math></inline-formula> compared with a normal TFET.

Reduction of Corner Effect in ZG-ES-TFET for Improved Electrical Performance and its Reliability Analysis in the Presence of Traps

Physics based analysis of a High-Performance Dual line Tunneling TFET with Reduced Corner Effects

A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect

Interfacial charge and temperature analysis of gate-all-around line tunneling TFET for improved device reliability

A Comparative Study on the Impacts of Interface Traps on Tunneling Fet and Mosfet

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

Influence of Corner Effect on Performance of Three-Dimensional Tunnel Field-Effect Transistor

Assessment of Trap Charges for Analog/RF FOMs and Linearity Behaviour on InAs Based Dual Metal Hetero Gate Oxide TFET for Enhanced Reliability

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

The Application of Gate-Drain Underlap Architecture in TFET-based Inverters

Impact of Interface Trap Distribution on the Performance of LTPS TFT

Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure

Investigation of Reliability Issues in a hybrid Extended Dual Source Double Gate Tunnel FET

Influence of charge traps on charge plasma-germanium double-gate TFET for RF/Analog & low-power switching applications

Trap assisted tunneling and its effect on subthreshold swing of tunnel field effect transistors

Impact of Noise and Interface Trap Charge on a Heterojunction Dual-Gate Vertical TFET Device

Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current

Gate Field Plate Structure for Subthreshold Swing Improvement of Si Line-Tunneling FETs

Simulation Study and Comparative Analysis of Some TFET Structures with a Novel Partial-Ground-Plane (PGP) Based TFET on SELBOX Structure