Abstract:In this paper, we consider the strain effect of charge plasma structure when the characteristics of junctionless MOSFET with line edge roughness (LER) variation is studied. It is found that strain can lower the fluctuation rates of threshold voltage (V th ), on- (I on ) and off-state (I off ) current, while it doesn't impact that of the subthreshold swing (SS). Besides, it can also enlarge the average values of I on , V th and SS, but it reduces the average I off , at the same time. It implies that considering the strain effect makes our research on charge-plasma structure closer to the reality.

The Immunity of Doping-Less Junctionless Transistor Variations Including the Line Edge Roughness

Source/Drain Engineered Charge-Plasma Junctionless Transistor for the Immune of Line Edge Roughness Effect

Variation Investigation of Junction-less Transistor with Side-wall Charge-plasma Structure Induced by Line Edge Roughness

Strain Consideration of Charge Plasma Structure on Junctionless Transistor With Line Edge Roughness

Suppression of Statistical Variability in Junctionless FinFET Using Accumulation-Mode and Charge Plasma Structure

High Performance Ge Ultra-Shallow Junctions Fabricated by A Novel Formation Technique Featuring Spin-On Dopant and Laser Annealing for Sub-10 Nm Technology Applications

Charge Plasma-Based Junctionless FinFET for The Immune of Fin Sidewall Angle Variation

Tunneling Leakage Current Reduction In Junctionless Transistors Using A Lightly Doped Region Near Drain

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A Variation Laterl Doping Layer and Lightly Doped Region Compensated Superjunction LDMOS

Investigation on the effective immunity to process induced line-edge roughness in silicon nanowire MOSFETs

Doping-Less Tunnel Field Effect Transistor: Design and Investigation

Novel STI scheme and layout design to suppress the kink effect in LDMOS transistors

Numerical Simulation on Novel Nano-Scale Lateral Double-Gate Tunneling Field Effect Transistor

Linearly Graded Doping Drift Region: a Novel Lateral Voltage-Sustaining Layer Used for Improvement of RESURF LDMOS Transistor Performances

Performance enhancement of nanotube junctionless FETs with low doping concentration rings

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Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs

Optimal Impurity Distribution Model and Experimental Verification of Variation of Lateral Doping Termination

Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal–Oxide–Semiconductor Field-Effect Transistors

Investigation of Trench Process Variation on the Recessed-Gate Junctionless MOSFETs Considering the Circuit Application