Abstract:In semiconductor manufacturing, PN junction is formed by introducing dopants to activate neighboring electron and hole conductance. To avoid structural distortion and failure, it generally requires the foreign dopants localize in the designated micro-areas. This, however, is challenging due to an inevitable interdiffusion process. Here we report a brand-new junction architecture, called "layer PN junction", that might break through such limit and help redefine the semiconductor device architecture. Different from all existing semiconductors, we find that a variety of van der Waals materials are doping themselves from n- to p-type conductance with an increasing/decreasing layer-number. It means the capability of constructing homogeneous PN junctions in monolayers' dimension/precision, with record high rectification-ratio (>10 5 ) and low cut-off current (<1 pA). More importantly, it spawns intriguing functionalities, like gate-switchable-rectification and noise-signal decoupled avalanching. Findings disclosed here might open up a path to develop novel nanodevice applications, where the geometrical size becomes the only critical factor in tuning charge-carrier distribution and thus functionality.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the challenges faced by the traditional PN junction formation methods in semiconductor manufacturing when approaching the single - layer dimension. Traditional PN junctions are formed by introducing dopants to activate adjacent electron and hole conductivity, but this method is difficult to achieve at the single - layer scale because the inevitable inter - diffusion process will lead to structural distortion and failure. Specifically, the paper points out: 1. **Limitations of traditional PN junctions**: When the size of semiconductor devices is reduced to the nanoscale, especially when approaching single - layer materials, traditional chemical doping and composition modulation methods will encounter great difficulties. This is because the diffusion process causes the distribution width of dopants in the semiconductor to be comparable to or even larger than the device size, making it very difficult to precisely control the dopant distribution. 2. **Requirement for new PN junctions**: In order to overcome these limitations, researchers need to develop new methods to construct PN junctions at the nanoscale, especially in single - layer materials. This new type of PN junction not only needs to have a high rectification ratio and low cut - off current, but also needs to be able to achieve new functions, such as gate - controllable rectification and the avalanche effect for noise signal decoupling. 3. **Specific objectives**: The paper proposes a new architecture called "layered PN junction", which utilizes the self - doping characteristics of van der Waals materials (such as transition metal chalcogenides and black phosphorus) to achieve the transition from n - type to p - type conductivity by increasing or decreasing the number of layers. This method can avoid the diffusion problems in traditional doping methods and achieve PN junctions with atomic - level precision, thereby redefining the architecture of semiconductor devices. In summary, the main objective of this paper is to explore and verify a new PN junction architecture that can achieve high - precision doping in single - layer materials, thereby breaking through the limitations of traditional methods and providing the possibility for the development of new nano - devices.

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