Abstract:Negative differential capacitance induced by the energy barrier formed by the nonlinear ferroelectric insulating layer during the phase transition in negative capacitance field effect transistors (NCFETs) can break through the fundamental thermionic limit of the metal-oxide-semiconductor field effect transistors (MOSFETs), which is set at a subthreshold swing (SS) of 60mV/dec at room temperature for low-power switching. Strain engineering has been shown effective for modulating both intrinsic and coupled properties of ferroelectric materials. However, while the modulation of negative capacitance (NC) by strain primarily remains within theoretical predictions, there is a lack of experimental studies to explore its effect on NCFETs. This study introduces strain to NCFETs by utilizing the magnetostriction of Terfenol-D upon the applied magnetic field. Results reveal a decrease in SSmin from 43.5mV/dec to 15.2mV/dec with a compressive strain increase from 0 to -0.005%. Additionally, theoretical results by using time-evolving Ginzburg-Landau equations and Kirchhoff's laws demonstrate that compressive strain enhances both the amplitude and duration of transient NC in CuInP2S6, while vice versa under tensile strain. This work offers valuable insights for the design of NCFET devices.

Strain Consideration of Charge Plasma Structure on Junctionless Transistor With Line Edge Roughness

Source/Drain Engineered Charge-Plasma Junctionless Transistor for the Immune of Line Edge Roughness Effect

Variation Investigation of Junction-less Transistor with Side-wall Charge-plasma Structure Induced by Line Edge Roughness

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Strain Effect on the Performance of Proton-Irradiated GaN-based HEMT

The Immunity of Doping-Less Junctionless Transistor Variations Including the Line Edge Roughness

Strain Tuning on Van Der Waals Negative Capacitance Transistors

Impacts of gate line edge roughness on sub 100nm MOSFETs

Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Impact of channel line-edge roughness on junctionless FinFET

Effects of Non-Fatal Electrostatic Discharge on the Threshold Voltage Degradation in Nano CMOS Devices

Suppression of Statistical Variability in Junctionless FinFET Using Accumulation-Mode and Charge Plasma Structure

Effects of Gate Metal Work Function and Line Edge Roughness on the Variability of Junctionless Field-Effect Transistor

Investigation of Trench Process Variation on the Recessed-Gate Junctionless MOSFETs Considering the Circuit Application

Performance Evaluation And Influence Of Device Parameters On Threshold Voltage Of Dual-Material Strained Gate-All-Around Mosfet

A Study of Subthreshold Behavior of Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs from an Electrostatic Potential Viewpoint

Charge-plasma Based Negative Capacitance Junctionless Transistor With Sub-60mV/dec Subthreshold Swing and High Ion/IoffRatio

Electrical Stress on the CMOS Inverters Made by Junctionless Gate-All-Around Transistors

Drain bias effects on statistical variability and reliability and related subthreshold variability in 20-nm bulk planar MOSFETs

Interface Roughness Effects on the Performance of Magnetic Tunnel Junctions