Abstract:In this paper, the effects of nanowire line-edge roughness (LER) in gate-all-around silicon nanowire MOSFETs (SNWTs) are comprehensively investigated through 3-D statistical simulation. The LER impacts on both the device performance variation and mean value degradation are discussed in detail. Due to the unique nature of a nanowire structure, the LER in SNWTs contains two degrees of freedom, which allows the nanowire edges to vary in arbitrary transverse direction and which is different from the LER in traditional devices with one degree of freedom. In order to identify the relative importance of the diameter and center position variations, the nanowire LER can be considered as the combination of two basic types: One has a varied diameter with a fixed center (type A), and the other has a varied center position with a fixed diameter (type B). The results indicate the tradeoff between these two types of LER, with type A of a larger performance variation and type B of a larger performance degradation. Furthermore, as the gate length L-g shrinks below the correlation length. of the nanowire LER, the impacts from the source/drain extension region will dominate the variation. The impact of the main LER parameters is discussed for the scaled case with a nonGaussian distribution in the device electrical parameters observed, and a new statistical method is proposed for better evaluation. On the other hand, the performance variation becomes insensitive to the correlation length in the case of Lambda > L-g, which indicates a higher tolerance for the nanowire LER design in ultrascaled SNWTs. The optimized LER parameters are also given for the nanowire LER design with acceptable performance variation and suppressed mean value degradation in SNWTs.

Impact of channel line-edge roughness on junctionless FinFET

A novel approach to simulate Fin-width Line Edge Roughness effect of FinFET performance

A New Method to Fin-width Line Edge Roughness Effect of FinFET Performance

Full 3-D simulation of gate line edge roughness impact on sub-30nm FinFETs

Effects of Gate Metal Work Function and Line Edge Roughness on the Variability of Junctionless Field-Effect Transistor

Impacts of gate line edge roughness on sub 100nm MOSFETs

Impact of Line-Edge Roughness on Double-Gate Schottky-Barrier Field-Effect Transistors

The impact of line edge roughness on the stability of a FinFET SRAM

Source/Drain Engineered Charge-Plasma Junctionless Transistor for the Immune of Line Edge Roughness Effect

Line-Edge Roughness from Extreme Ultraviolet Lithography to Fin-Field-Effect-Transistor: Computational Study

Simulation of Correlated Line-Edge Roughness in Multi-Gate Devices

Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part II–Experimental Results and Impacts on Device Variability

Strain Consideration of Charge Plasma Structure on Junctionless Transistor With Line Edge Roughness

Investigation of Nanowire Line-Edge Roughness in Gate-All-Around Silicon Nanowire MOSFETs

Line-edge Roughness Induced Single Event Transient Variation in SOI FinFETs

Suppression of Statistical Variability in Junctionless FinFET Using Accumulation-Mode and Charge Plasma Structure

3-D simulation of geometrical variations impact on nanoscale FinFETs

Simulation of line-edge roughness effects in silicon nanowire MOSFETs

An Optimized FinFET Channel with Improved Line-Edge Roughness and Linewidth Roughness Using the Hydrogen Thermal Treatment Technology

Investigation on the effective immunity to process induced line-edge roughness in silicon nanowire MOSFETs

Triple-Gate Fin Field Effect Transistors with Fin-Thickness Optimization to Reduce the Impact of Fin Line Edge Roughness