Abstract:Abstract Over the past decade, two-dimensional semiconductors (2DSCs) have aroused wide interest due to their extraordinary electronic, magnetic, optical, mechanical, and thermal properties, which hold potential in electronic, optoelectronic, thermoelectric applications, and so forth. The field-effect transistor (FET), a semiconductor gated with at least three terminals, is pervasively exploited as the device geometry for these applications. For lack of effective and stable substitutional doping techniques, direct metal contact is often used in 2DSC FETs to inject carriers. A Schottky barrier (SB) generally exists in the metal–2DSC junction, which significantly affects and even dominates the performance of most 2DSC FETs. Therefore, low SB or Ohmic contact is highly preferred for approaching the intrinsic characteristics of the 2DSC channel. In this review, we systematically introduce the recent progress made in theoretical prediction of the SB height (SBH) in the 2DSC FETs and the efforts made both in theory and experiments to achieve low SB contacts. From the comparison between the theoretical and experimentally observed SBHs, the emerging first-principles quantum transport simulation turns out to be the most powerful theoretical tool to calculate the SBH of a 2DSC FET. Finally, we conclude this review from the viewpoints of state-of-the-art electrode designs for 2DSC FETs.

Impact Factors On The Performance Of Schottky Barrier Mosfets With Asymmetric Barrier Height At Source/Drain

A Comparative Study of Double Gate MOSFET with Asymmetric Barrier Heights at Source/drain and the Symmetric DG-SBFET

Performance Estimations of Gate-All-around Silicon Nanowire FETs with Asymmetric Barrier Heights at Source/drain

Investigation Of Rf Performance Of Nano-Scale Ultra-Thin-Body Schottky-Barrier Mosfets Using Monte Carlo Simulation

Impact of Gate–Source/Drain Underlap on the Performance of Monolayer SiC Schottky-Barrier Field-Effect Transistor

A planar asymmetric Schottky barrier source/drain structure for nano-scale MOSFETs

Feasible approach to the fabrication of asymmetric Schottky barrier MOSFETs by using the spacer technique

Impact Of Gate Misalignment On The Performance Of Dopant-Segregated Schottky Barrier Mosfets

Towards Schottky-Barrier Source/Drain Mosfets

An Assessment of the Performance for Double Gate Schottky Barrier MOSFETs with Modulated Back Gate

Impact of Gate Overlap on Performance of Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors Including Gate Induced Barrier Lowering Effect

High Frequency Performance of Nano-Scale Ultra-Thin-body Schottky-barrier N-Mosfets

Numerical study on Schottky-barrier double-gate MOS transistor with recessed channel and asymmetric contact

Gate-Induced Image Force Barrier Lowering in Schottky Barrier FETs

Novel Schottky Barrier Mosfet with Dual-Layer Silicide Source/Drain Structure

A Computational Study of Dopant-Segregated Schottky Barrier MOSFETs

Characterization Of Dopant Segregated Schottky Barrier Source/Drain Contacts

Monte Carlo Simulation Of 50nm N-Channel Schottky Barrier Tunneling Transistors

Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment

A Monte Carlo Study of Ambipolar Schottky Barrier MOSFETs

A Current–Voltage Model for Double Schottky Barrier Devices