Abstract:We have developed a novel epitaxial nickel-aluminide silicide (NiSi 2-x Al x ) to reduce the Schottky-Barrier height (SBH) and series resistance in n-channel MuGFETs with dopant-segregated Schottky-Barrier source/drain (DSS). 10% substitutional incorporation of Al in the Si matrix at the silicide-Si interface leads to a 37% reduction in the intrinsic SBH of nickel silicide. A further 42% effective reduction in the DSS SBH was attained with the combination of NiSi 2-x Al x and DSS technology. Saturation drive current enhancement of 94% for NiSi 2-x Al x DSS MuGFETs over NiSi DSS MuGFETs was achieved, attributed to SBH lowering, series resistance reduction and possibly silicide strain effects. As a result, an excellent drive current of 882 μA/μm at V GS -V T =V DS = 1.2 V was achieved for NiSi 2-x Al x DSS MuGFETs with 55 nm gate length.

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing.

Schottky Barrier Height Tuning Via The Dopant Segregation Technique Through Low-Temperature Microwave Annealing

Schottky Barrier Height Tuning Via Nickel Silicide As Diffusion Source Dopant Segregation Scheme with Microwave Annealing

Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser anneal

A More CMOS Process Compatible Scheme to Tune the Schottky Barrier Height of NiSi to Electrons by Means of Dopant Segregation (DS) Technique

Schottky barrier height tuning using P+ DSS for NMOS contact resistance reduction

Modulation and Extraction of Schottky Barrier Height for Advanced Source/Drain Contact

Schottky-Barrier Height Tuning by Means of Ion Implantation into Preformed Silicide Films Followed by Drive-In Anneal

A Modified Scheme to Tune the Schottky Barrier Height of NiSi by Means of Dopant Segregation Technique

Silicide As Diffusion Source For Dopant Segregation In 70-Nm Mosfets With Ptsi Schottky-Barrier Source/Drain On Ultrathin-Body Soi

The Modulation of Schottky Barrier Height of NiSi/n-Si Schottky Diodes by Silicide As Diffusion Source Technique

A Comparative Study of Two Different Schemes to Dopant Segregation at NiSi/Si and PtSi/Si Interfaces for Schottky Barrier Height Lowering

Interaction of NiSi with dopants for metallic source/drain applications

Achieving Conduction Band-Edge Schottky Barrier Height for Arsenic-Segregated Nickel Aluminide Disilicide and Implementation in FinFETs With Ultra-Narrow Fin Widths

Silicon Nitride Interface Engineering for Fermi Level Depinning and Realization of Dopant-Free MOSFETs

On Different Process Schemes for MOSFETs with a Controllable NiSi-Based Metallic Source/Drain

Effective Schottky Barrier Lowering in Silicon-on-insulator Schottky-barrier Metal-Oxide-semiconductor Field-Effect Transistors Using Dopant Segregation

Novel Aluminum Segregation at NiSi/ ${P}^{+}$-Si Source/Drain Contact for Drive Current Enhancement in $P$-Channel FinFETs

Novel Nickel-Alloy Silicides For Source/Drain Contact Resistance Reduction In N-Channel Multiple-Gate Transistors With Sub-35nm Gate Length

Novel Epitaxial Nickel Aluminide-Silicide with Low Schottky-Barrier and Series Resistance for Enhanced Performance of Dopant-Segregated Source/Drain N-channel MuGFETs