Abstract:In this work, Dopant Segregated Schottky Barrier (DSSB) and Schottky Barrier (SB) vertical silicon nanowire (VSiNW) diodes were fabricated on p -type Si substrate using CMOS- compatible processes to investigate the effects of segregated dopants at the silicide/silicon interface and different annealing processes on nickel silicide formation in DSSB VSiNW diodes. With segregated dopants at the silicide/silicon interface, VSiNW diodes showed higher on- current, due to an enhanced carrier tunneling, and much lower leakage current. This can be attributed to the altered energy bands caused by the accumulated Arsenic dopants at the interface. Moreover, DSSB VSiNW diodes also gave ideality factor much closer to unity and exhibited lower electron SBH ( Φ Bn ) than SB VSiNW diodes. This proved that interfacial accumulated dopants could impede the inhomogeneous nature of the Schottky diodes and simultaneously, minimize the effect of Fermi level pinning and ionization of surface defect states. Comparing the impact of different silicide formation annealing using DSSB VSiNW diodes, the 2-step anneal process reduces the silicide intrusion length within the SiNW by ~ 5X and the silicide interface was smooth along the (100) direction. Furthermore, the 2-step DSSB VSiNW diode also exhibited much lower leakage current and an ideality factor much closer to unity, as compared to 1-step DSSB VSiNW diode.

The Modulation of Schottky Barrier Height of NiSi/n-Si Schottky Diodes by Silicide As Diffusion Source Technique

Modulation Of Schottky Barrier Height For Nisi/Si(110) Diodes Using An Antimony Interlayer

A Comparative Study of Two Different Schemes to Dopant Segregation at NiSi/Si and PtSi/Si Interfaces for Schottky Barrier Height Lowering

Interaction of NiSi with dopants for metallic source/drain applications

Study of Schottky barrier height modulation for NiSi/Si contact with an antimony interlayer

A Modified Scheme to Tune the Schottky Barrier Height of NiSi by Means of Dopant Segregation Technique

Schottky-Barrier Height Tuning by Means of Ion Implantation into Preformed Silicide Films Followed by Drive-In Anneal

Schottky Barrier Height Tuning Via Nickel Silicide As Diffusion Source Dopant Segregation Scheme with Microwave Annealing

A More CMOS Process Compatible Scheme to Tune the Schottky Barrier Height of NiSi to Electrons by Means of Dopant Segregation (DS) Technique

Schottky Barrier Height Modulation of Nickel Germanide Schottky Diodes by the Germanidation-Induced Dopant Segregation Technique

Modulation and Extraction of Schottky Barrier Height for Advanced Source/Drain Contact

Design consideration of ion implantation in dopant segregation technique at NiSi/Si interface

Silicide As Diffusion Source For Dopant Segregation In 70-Nm Mosfets With Ptsi Schottky-Barrier Source/Drain On Ultrathin-Body Soi

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing.

Effect of Nickel Silicide Induced Dopant Segregation on Vertical Silicon Nanowire Diode Performance

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing

Effects of Carbon on Schottky Barrier Heights of NiSi Modified by Dopant Segregation

Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser anneal

Thermal Stability of Ni(Zr)Si Silicide and Ni(Zr)Si/Si Schottky Diode

The material characterization of nickel germanosilicides on SiGe/Si substrate and the contact size effect on Schottky diodes

Silicon Nitride Interface Engineering for Fermi Level Depinning and Realization of Dopant-Free MOSFETs