Abstract:Dopant-segregated source/drain contacts in a p-channel Schottky-barrier metal-oxide semiconductor field-effect transistor (SB-MOSFET) require further hole Schottky barrier height (SBH) regulation toward sub-0.1 eV levels to improve their competitiveness with conventional field-effect transistors. Because of the solubility limits of dopants in silicon, the requirements for effective hole SBH reduction with dopant segregation cannot be satisfied using mono-implantation. In this study, we demonstrate a potential solution for further SBH tuning by implementing the dual implantation of boron (B) and aluminum (Al) in combination with microwave annealing (MWA). By using such a method, not only has the lowest hole SBH ever with 0.07 eV in NiSi/n-Si contacts been realized, but also the annealing duration of MWA was sharply reduced to 60 s. Moreover, we investigated the SBH tuning mechanisms of the dual-implanted diodes with microwave annealing, including the dopant segregation, activation effect, and dual-barrier tuning effect of Al. With the selection of appropriate implantation conditions, the dual implantation of B and Al combined with the MWA technique shows promise for the fabrication of future p-channel SB-MOSFETs with a lower thermal budget.

Schottky Barrier Height Tuning Via Nickel Silicide As Diffusion Source Dopant Segregation Scheme with Microwave Annealing

Schottky Barrier Height Tuning Via The Dopant Segregation Technique Through Low-Temperature Microwave Annealing

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing.

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing

The Modulation of Schottky Barrier Height of NiSi/n-Si Schottky Diodes by Silicide As Diffusion Source Technique

Silicide As Diffusion Source For Dopant Segregation In 70-Nm Mosfets With Ptsi Schottky-Barrier Source/Drain On Ultrathin-Body Soi

Abnormal oxidation in nickel silicide and nickel germanosilicide in sub-micro CMOS

Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser anneal

Ultra-shallow Junctions Formed Using Microwave Annealing

Effective Schottky Barrier Lowering in Silicon-on-insulator Schottky-barrier Metal-Oxide-semiconductor Field-Effect Transistors Using Dopant Segregation

Schottky-Barrier Height Tuning by Means of Ion Implantation into Preformed Silicide Films Followed by Drive-In Anneal

Design consideration of ion implantation in dopant segregation technique at NiSi/Si interface

A Comparative Study of Two Different Schemes to Dopant Segregation at NiSi/Si and PtSi/Si Interfaces for Schottky Barrier Height Lowering

High-Performance Germanium pMOSFETs With NiGe Metal Source/Drain Fabricated by Microwave Annealing

Silicon Nitride Interface Engineering for Fermi Level Depinning and Realization of Dopant-Free MOSFETs

Low-resistive and homogenous NiPt-silicide formation using ultra-low temperature annealing with microwave system for 22nm-node CMOS and beyond

Ni Silicide and Ni Germanosilicide Self-Aligned Process for 65nm and Beyond CMOS Technology by 2-Step Rapid Thermal Annealing

Nige Metal Source/Drain Ge Pmosfets For Future High Performance Vlsi Circuits Applications

Annealing Process Influence And Dopant-Silicide Interaction In Self-Aligned Nisi Technology

Improvement of Thermal Stability of Nickel Silicide Using Co-Sputtering of Ni and Ti on Boron Cluster Implanted Ultra-Shallow Junction for Nanoscale CMOS Technology

On Different Process Schemes for MOSFETs with a Controllable NiSi-Based Metallic Source/Drain