Abstract:In this paper, the novel Quasi-SOI CMOS architecture is fabricated based on bulk Si substrate for the first time. The whole fabrication is basically compatible with the conventional CMOS technology. The path of the draininduced barrier lowering (DIBL) effect can be effectively suppressed by the "L-Type" insulator surrounding the source and drain in Quasi-SOI MOSFET. Such device structure can effectively suppress the short-channel effects (SCEs) and prevent the transistor from the bulk punch-through. The leakage current will not increase with the high doping concentration of the substrate due to the absence of P/N junctions surrounding the S/D regions which brings more flexibility on the modulation of the threshold voltage. Moreover, the influence of process-induced variations on the new transistor performance and implications for manufacturing processes comparing with UTB SOI MOSFET are also studied by simulations in order to investigate the sensitivity of the important characteristics to the device crucial physical parameter fluctuations introduced by the process. The results show that Quasi-SOI MOSFET can be more tolerant of process-induced variation for the deep nanometer scale regime. The highly manufacturable Quasi-SOI MOSFET which can combine the advantages of ultra-thin body (UTB) SOI MOSFET and bulk silicon device can be considered as a promising candidate for highly scaled devices.

Comparison of the Characteristics of DSOI, SOI and Bulk-Si MOSFETs

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Experimental Results on Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Investigation of Thermal Property of Novel DSOI MOSFETs Fabricated with Local SIMOX Technique

A Novel Drain Source On Insulator (Dsoi) Structure To Fully Suppress The Floating-Body And Self-Heating Effects

Simulation for a Novel Vertical SOI Configuration

Novel Localized-SOI MOSFET's Combining the Advantages of SOI and Bulk Substrates for Highly-Scaled Devices

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Channel Design of Silicon-On-Insulator (soi) Mosfet for Low-Voltage Low-Power Application

Analysis and Optimization of SDOI Structure to Maximize the Intrinsic Performance of Extremely Scaled MOSFETs

Experimental investigation of Quasi-SOI MOSFET for highly scaled devices

Patterned Buried Oxide Layers under A Single Mosfet to Improve the Device Performance

A study of source/drain-on-insulator structure for extremely scaled MOSFETs

A new self-aligned BOI (Body-on-insulator) finfet fabricated on bulk SI wafers

High-Performance BOI FinFETs Based on Bulk-Silicon Substrate

A New Silicon-On-Insulator Structure of Metal-Oxide-Semiconductor Field Effect Transistor to Reduce Self-Heating Effect

Double-gate SOI MOSFET Fabrication from Bulk Silicon Wafer

Characterization of DC, Analog/rf, and Low Frequency Noise in Silicon-on-insulator Nmosfets with Different Body-Contact Structures

Fully depleted SOI devices with TiN gate and elevated source-drain structures

Quasi-Soi Mosfet: A Novel Architecture Combining the Advantages of Soi and Bulk Devices

The Simulation Analysis of Thick Film Fully Depleted SOI MOSFET Implemented by Anti-Doped Silicon Island