Abstract:Silicon-on-insulator (SOI) technology offers many advantages for transistors while also presenting significant challenges in thermal management. The buried oxide (BOX) layer impedes vertical heat dissipation, rendering conventional cooling solutions based on air and liquid coolers inefficient. In this study, we propose a novel theoretical design of a holey silicon-based lateral thermoelectric cooler (TEC) that provides a unique cooling solution for SOI transistors. By redistributing heat laterally, this TEC overcomes the limitation of poor vertical heat dissipation caused by the BOX layer, meanwhile taking advantage of the sustained temperature gradient in the device layer. In addition, we present a novel precooling strategy which utilizes a long-time, optimal-voltage TEC cooling pulse to cool down a short-time, high-power-density heating pulse. We evaluate the cooling performance through simulation of two devices: an SOI transistor-TEC device and a $5\times5$ SOI transistor-TEC array device. Under a 10 $\mu \text{s}$ transient heat pulse with high-power density of 11000 W/cm2 (1.6 W), the SOI transistor-TEC device with a 10 $\mu \text{m}$ thick BOX layer can be cooled from 465.7 °C down to 407.4 °C ( $\Delta {T}$ = 58.3 °C) in peak hotspot temperature when precooled with a 1000 $\mu \text{s}$ TEC pulse, consuming 0.20 W of TEC power. Furthermore, the SOI transistor-TEC array device provides spatial temperature control by incorporating multiple coolers which enable selective cooling for individual transistor units without significant loss of cooling performance. In summary, our TEC design exhibits great potential in offering dynamic thermal management for a wide range of advanced SOI devices.

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Simulation for a Novel Vertical SOI Configuration

A Novel Drain Source On Insulator (Dsoi) Structure To Fully Suppress The Floating-Body And Self-Heating Effects

Investigation of Self-Heating Effect in SOI Tunnel Field-Effect Transistor

Patterned Buried Oxide Layers under A Single Mosfet to Improve the Device Performance

Fabrication of Silicon-on-insulator-multilayer Structure by Epitaxial Layer Transfer

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Experimental Results on Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Comparison of the Characteristics of DSOI, SOI and Bulk-Si MOSFETs

Quasi-Soi Mosfet: A Novel Architecture Combining the Advantages of Soi and Bulk Devices

Novel Localized-SOI MOSFET's Combining the Advantages of SOI and Bulk Substrates for Highly-Scaled Devices

Fabrication of Silicon-on-Insulator Structure with Si3N4 As Buried Insulating Films by Epitaxial Layer Transfer

Investigation of Thermal Property of Novel DSOI MOSFETs Fabricated with Local SIMOX Technique

Study of the SOI LDMOS with Low Conduction Loss and Less Gate Charge

Analysis and Optimization of SDOI Structure to Maximize the Intrinsic Performance of Extremely Scaled MOSFETs

Heat dissipation path of self-heating effect for SOI MOSFET considering BOX layer and TiN barrier layer

Dynamic Thermal Management in SOI Transistors Using Holey Silicon-Based Thermoelectric Cooling

A Novel Nanoscaled Device Concept: Quasi-Soi MOSFET to Eliminate the Potential Weaknesses of UTB SOI MOSFET

The Heat Dissipation Path of Self-Heating Effects for the SOI MOSFET by Considering the BOX Layer and the TiN Barrier Layer

A study of source/drain-on-insulator structure for extremely scaled MOSFETs