Abstract:A diamondlike-carbon (DLC) layer was used to substitute for the buried SiO2 layer in silicon on insulator (SOI) to mitigate the self-heating effects in our previous study. However, we discovered drawbacks associated with the inferior Si/DLC interface, inadequate thermal stability as well as carbon-silicon interdiffusion at the Si/DLC interface that could hamper future application of this silicon-on-diamond structure to microelectronic devices. In this work, we introduced a silicon dioxide barrier layer between the Si film and DLC buried layer to form a silicon-on-SiO2∕DLC dual-insulator structure to tackle these problems. Cross-sectional high-resolution transmission electron microscopy reveals that the Si/insulator interface is atomically flat and the top Si layer has nearly perfect crystalline quality. The SiO2∕DLC dual-insulator layer retains excellent insulating properties at typical complementary metal oxide silicon processing temperatures. Numerical simulation reveals that the negative differential resistance and channel temperature are significantly reduced compared with those of the same metal oxide semiconductor field effect transistors fabricated in conventional SiO2-based SOI, suggesting that the silicon-on-dual-insulator structure can alleviate the self-heating penalty effectively.

Fabrication of Silicon-on-insulator-multilayer Structure by Epitaxial Layer Transfer

Fabrication of Silicon-on-Insulator Structure with Si3N4 As Buried Insulating Films by Epitaxial Layer Transfer

Fabrication of SOI Structure with AlN Film As Buried Insulator by Ion-Cut Process

Soi Structures Produced By Oxygen Ion-Implantation And Their Annealing Behavior

Fabrication of Silicon-on-aln Novel Structure and Its Residual Strain Characterization

A Low Temperature Silicon‐on‐Insulator Fabrication Process Using Si MBE on Double‐Layer Porous Silicon

Novel SOI technology - H+ implantation, bonding and separation

A New Silicon-On-Insulator Structure of Metal-Oxide-Semiconductor Field Effect Transistor to Reduce Self-Heating Effect

Computer Simulation for the Formation of the Insulator Layer of Silicon-On-Insulator Devices by N+ and O+ Co-Implantation

Synthesis of SOI Material Using Low Energy Water Ion Implantation

Formation of Silicon on Plasma Synthesized Aluminum Nitride Structure by Ion Cutting

Fabrication of Silicon-on-sio2/diamondlike-carbon Dual Insulator Using Ion Cutting and Mitigation of Self-Heating Effects

Formation of Silicon on Plasma Synthesized SiOxNy and Reaction Mechanism

Study of full isolation SOI technology by highly selective and self-stopping formation of porous oxidized silicon

Epitaxial Growth and Transfer of Single Crystalline Si Thin Films on Double Layered Porous Silicon Substrate

Formation of Silicon on Insulator Using Separation by Implantation of Oxygen with Water Plasma

Optical Characteristics of Multilayer Structures Formed by Ion-Beam Synthesis and Their Computer-Simulation

AUGER ELECTRON SPECTROSCOPIC STUDIES OF INTERFA CE AND BURIED LAYER OF SOI STRUCTURE FORMED BY ION IMPLANTATION

Fabrication of Device-grade Separation-by-implantation-of-oxygen Materials by Optimizing Dose-energy Match

Experimental Results on Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Fabrication of a Novel SOI Material with Non-Planar Buried Oxide Layer