Abstract:The effect on the electrical parameters of the SiON/AlGaN/GaN structures of treatment of different durations of low-energy nitrogen plasma was studied. The AlGaN surface was subjected to plasma treatment in the working chamber of the plasma-chemical deposition unit before starting the monosilane to form the SiON film. Changes in the transport properties (conductivity and mobility) of the canal and capacitive properties of the structures were evaluated. It has been experimentally shown that such treatment leads to a change in the magnitude of polarization charges both at the insulator-AlGaN interface and at the AlGaN/GaN interface. With the help of C – V measurements-in the hysteresis mode, it is shown that at the control voltage U > +4 — +5 V ), some of the channel electrons are captured at deep centers at the SiON-AlGaN interface, and with an increase in the duration of exposure to plasma time, a sharp increase is observed charge Q it , formed by electronic boundary states. The use of additional treatment with nitrogen plasma transfers work for nitride structures from the D -mode ( V th = –4 V) to the E -mode ( V th = +0.9 V).Using Auger-measurements, it was shown that plasma treatment leads to a change in the amount of oxygen in the SiON layer and in nano-regions of the barrier layer, and with an increase in the duration of plasma exposure, a sharp decrease in the amount of oxygen in these layers is observed. Also, when using plasma treatment, the redistribution of Ga and Al at the AlGaN–GaN interface i.e. in the channel area. Using Auger measurements near the SiON–AlGaN interface from the side of the insulator, the localization of nitrogen atoms chemically bonded with silicon N(Si) with the formation of a peak at the interface, the size of which increases with increasing duration of plasma exposure.

Formation of Silicon on Plasma Synthesized Aluminum Nitride Structure by Ion Cutting

Fabrication of SOI Structure with AlN Film As Buried Insulator by Ion-Cut Process

Formation of Silicon on Plasma Synthesized SiOxNy and Reaction Mechanism

Fabrication of Silicon-on-aln Novel Structure and Its Residual Strain Characterization

Residual Strain of Silicon-on-AlN Novel Structure

Fabrication of Silicon-on-Insulator Structure with Si3N4 As Buried Insulating Films by Epitaxial Layer Transfer

An adjustable Ar ion-beam activation strategy to achieve hydrophilic bonding of Si and diamond by deposited AlN interlayer

Aln Thin Films Grown by Ion-Beam-Enhanced Deposition and Its Application to Soi Materials

Tetrahedral Amorphous-Carbon Thin Films for Silicon-on-insulator Application

Effect of N_2O Plasma Treatment on Luminescence of Silicon-rich Silicon Nitride Films

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Enhanced Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices by Nh3 Plasma and Annealing Treatment

Sublimation Growth of Aluminum Nitride on Silicon Carbide Substrate with Aluminum Nitride–silicon Carbide Alloy Transition Layer

Modeling the processes of formation of defects that form deep levels in SiON/AlGaN/GaN

Geometrical Deviation and Residual Strain in Novel Silicon-On-Aluminium-Nitride Bonded Wafers

Fabrication of Silicon-on-insulator-multilayer Structure by Epitaxial Layer Transfer

Preparation of Large Area Aln Films on Silicon and Its Application to the Soi Structure

Formation of Silicon on Insulator Using Separation by Implantation of Oxygen with Water Plasma

Thermal Boundary Conductance of Direct Bonded Aluminum Nitride to Silicon Interfaces

Growth of Aluminum Nitride on a Silicon Nitride Substrate for Hybrid Photonic Circuits

One-Step Synthesis of Silicon Oxynitride Films Using a Steady-State and High-Flux Helicon-Wave Excited Nitrogen Plasma