Abstract:Heat accumulation and self-heating have become key issues in microelectronics owing to the ever-decreasing size of components and the move toward three-dimensional structures. A significant challenge for solving these issues is thermally isolating materials, such as silicon dioxide (SiO2), which are commonly used in microelectronics. The silicon-on-insulator (SOI) structure is a great demonstrator of the limitations of SiO2 as the low thermal conductivity insulator prevents heat dissipation through the bottom of a device built on a SOI wafer. Replacing SiO2 with a more thermally conductive material could yield immediate results for improved heat dissipation of SOI structures. However, the introduction of alternate materials creates unknown interfaces, which can have a large impact on the overall thermal conductivity of the structure. In this work, we studied a direct bonded AlN-to-SOI wafer (AlN-SOI) by measuring the thermal conductivity of AlN and the thermal boundary conductance (TBC) of silicon (Si)/AlN and Si/SiO2/aluminum-oxygen-nitrogen (AlON)/AlN interfaces, the latter of which were formed during plasma-activated bonding. The results show that the AlN-SOI possesses superior thermal properties to those of a traditional SOI wafer, with the thermal conductivity of AlN measured at roughly 40 W m-1 K-1 and the TBC of both interfaces at roughly 100 MW m-2 K-1. These results show that AlN-SOI is a very promising structure for improving heat dissipation in future microelectronics.

Geometrical Deviation and Residual Strain in Novel Silicon-On-Aluminium-Nitride Bonded Wafers

Fabrication of Silicon-on-aln Novel Structure and Its Residual Strain Characterization

Residual Strain of Silicon-on-AlN Novel Structure

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice

Formation of Silicon on Plasma Synthesized Aluminum Nitride Structure by Ion Cutting

Thermal Boundary Conductance of Direct Bonded Aluminum Nitride to Silicon Interfaces

Role of an Ultra-Thin Aln/Gan Superlattice Interlayer on the Strain Engineering of Gan Films Grown on Si(110) and Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy

MBE-grown AlN-on-Si with Improved Crystalline Quality by Using Silicon-on-insulator Substrates

Strain accumulation and relaxation on crack formation in epitaxial AlN film on Si (111) substrate

Phase stability and the interface structure of a nanoscale Si crystallite in Al-based alloys

An adjustable Ar ion-beam activation strategy to achieve hydrophilic bonding of Si and diamond by deposited AlN interlayer

Influence of Post-Bonding Annealing Treatment on Interface Characteristics of Si-Si Wafer Bonded Via Room Temperature Surface Activation

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Strain Effects on InxAl1−xN Crystalline Quality Grown on GaN Templates by Metalorganic Chemical Vapor Deposition

Finite Element Simulation of Stress Distribution and Strain Model Optimization for Strain-Inducing SOI Wafers with Highly Stressed SiN Films

Improving the structural performance of low-temperature sputtered AlN on silicon substrate

Silicon-induced Strain Relaxation and Enhanced Gallium Surfactant Effects on Gallium Nitride Island Shaping

Influence of Different Surface-Passivation Dielectrics on High-Temperature Strain Relaxation of AlGaN in AlGaN∕GaN Heterostructures

Crack-free > 1- μ m AlN layer on Si substrate using ductile interlayer for strain modification in epitaxial film