Abstract:In this paper, we proposed an approach to obtain a globally biaxially strained silicon-on-insulator (SOI) wafer, and the strain mechanism was discussed. By this process, both biaxially tensile and compressive strained SOI (sSOI) can be obtained. The strain introduced into the SOI layer is mainly contributed by the plastic deformation of the buried SiO2 film caused by annealing with the deposition of a high-stress SiN film. Furthermore, He+ implantation at the interface between SiO2 and the substrate Si layer is confirmed to effectively enhance the strain by the sliding of the buried SiO2 at the SiO2-substrate Si interface. Raman spectroscopy shows that the strain of the He+ implanted sSOI has a significant enhancement of more than 300% compared with the unimplanted sSOI.In this paper, we proposed an approach to obtain a globally biaxially strained silicon-on-insulator (SOI) wafer, and the strain mechanism was discussed. By this process, both biaxially tensile and compressive strained SOI (sSOI) can be obtained. The strain introduced into the SOI layer is mainly contributed by the plastic deformation of the buried SiO2 film caused by annealing with the deposition of a high-stress SiN film. Furthermore, He+ implantation at the interface between SiO2 and the substrate Si layer is confirmed to effectively enhance the strain by the sliding of the buried SiO2 at the SiO2-substrate Si interface. Raman spectroscopy shows that the strain of the He+ implanted sSOI has a significant enhancement of more than 300% compared with the unimplanted sSOI.

Finite Element Simulation of Stress Distribution and Strain Model Optimization for Strain-Inducing SOI Wafers with Highly Stressed SiN Films

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Stress calculation and analysis of uniaxially strained silicon on the insulator

Study of Local Stress Using Stress-Absorbing Si Diaphragm

Fabrication and Characterization of Uniaxially Strained SOI with Wafer Level by Mechanical Bending and Annealing

Simulation Of Near-Crack-Tip Strain Fields On Single-Crystal Silicon Wafer

A Novel Approach to Study Patterned Thin Film Local Stress for Microelectronics Application

Three Dimensional Modeling of Anisotropic Stress Effects in Thermal Oxidation of Silicon

Uniaxially Strained Silicon on Insulator with Wafer Level Prepared by Mechanical Bending and Annealing

The Formation Mechanism of Globally Biaxial Strain in He+ Implanted Silicon-on-insulator Wafer Based on the Plastic Deformation and Smooth Sliding of Buried SiO2 Film

Effect of Silicon-on-Insulator Substrate on Residual Strain in 3C-Sic Films

Strain effect in silicon-on-insulator materials: Investigation with optical phonons

Analyzing strained-silicon options for stress-engineering transistors

Process Characterization for Strained Si on SOI CMOS Devices

A Framework for Layout-Dependent STI Stress Analysis and Stress-Aware Circuit Optimization

An Efficient Finite-Element Method-Based Stress Simulator for Integrated Circuit Optimization Designs

Analytical Models For The Thermal Strain And Stress Induced By Annular Through-Silicon-Via (Tsv)

Experimental Analyses on Multiscale Structural and Mechanical Properties of Ε-Si/gesi/c-si Materials

Evaluating Interface Effect On Stresses In Thin Films By A Local Curvature Metrology With High Accuracy And Resolution

Modeling of enhancement factor of hole mobility for strained silicon under low stress intensity

The Effects of Stress on Interfacial Properties and Flatband Voltage Instability of 4H-Sic MOS Structures