Abstract:The distribution of intrinsic point defects, comprising vacancies and self-interstitials, plays a pivotal role in determining the quality and properties of silicon wafers, with profound implications for their applications in the semiconductor industry. Previous research posits that the dominant defect type in Czochralski (Cz) Si can be manipulated by adjusting the ratio of the pulling rate (V) to the axial thermal gradient (G). The critical value of V /G establishes the equilibrium between vacancies and self-interstitials. However, conventional theories often consider ( V /G ) (crit) to be a constant based on the assumption of thermal equilibrium. In this study, we present evidence that the formation and diffusion of the intrinsic point defects are influenced by thermal stress, rendering ( V/ G ) (crit) dependent on thermal stress distribution. Through a combination of first-principles calculations and finite element simulations, we establish a quantitative theoretical model that considers thermal stress. Based on this model, the impact of thermal stress on the defect distribution during Cz Si growth and the value of ( V/ G ) (c rit) is elucidated. Our findings are validated through experimental growth of Cz Si and analytical testings. This work not only contributes to a deeper understanding of the microscopic mechanisms governing defect dynamics in Si but also advances Cz Si growth technology, ultimately enhancing the quality of the resultant Si wafers.

Simulation Of Near-Crack-Tip Strain Fields On Single-Crystal Silicon Wafer

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

Crack Tip Dislocation Emission and Nanoscale Deformation Fields in Silicon

Tensile Properties of Si Nanowires with Faulted Stacking Layers

Analysis of the Nano-Deformation Fields of Micro-Crack in Silicon by High-Resolution Transmission Electron Microscopy

Nanoscale deformation analysis of a crack-tip in silicon by geometric phase analysis and numerical moiré method

Nanoscale Deformation Analysis Near Crack-Tip under Residual Stress in Si by High-Resolution Transmission Electron Microscopy

Fracture of a silicon nanowire at ultra-large elastic strain

Molecular dynamics study of tensile-compressive behavior of silicon steel single crystal

Mechanism of crack evolution in nano-indentation of single crystal silicon by atomistic simulations and theoretical analysis

The Tensile Effect on Crack Formation in Single Crystal Silicon Irradiated by Intense Pulsed Ion Beam

Finite Element Simulation of Stress Distribution and Strain Model Optimization for Strain-Inducing SOI Wafers with Highly Stressed SiN Films

Coarse-grained simulations of single-crystal silicon

Critical Loading Conditions of Amorphization, Phase Transformation, and Dilation Cracking in 6h‐silicon Carbide

Cracking in semiconductor devices–effect of plasticity under triaxial constraint

Impact of Thermal Stress on Intrinsic Point Defect in Czochralski Crystal Growth: Developing a Quantitative Model for Defect Formation and Distribution

Measurement and simulation of strain fields around crack tips under mixed-mode fatigue loading

In Situ Tem Study of Deformation-Induced Crystalline-To-Amorphous Transition in Silicon

Mechanical properties of Si nanowires as revealed by in situ transmission electron microscopy and molecular dynamics simulations.

Effects of temperature and strain rate on dynamic crack propagation in brittle silicon

Revisiting the Rate-Dependent Mechanical Response of Typical Silicon Structures via Molecular Dynamics