Abstract:The existing stress criterion assumes the material to be isotropic and only distinguishes elastic, plastic, and crack zones, to explain the scratching-induced sub-surface defects during the contact loading processes such as nanoindentation, nanoscratching, and grinding. However, anisotropic single-crystal materials such as monocrystalline silicon and silicon carbide have more diverse defect characteristics and sub-surface defects in these materials cannot be well explained and predicted using the existing criterion. In this study, a thorough microscopic characterisation and complementary stress analysis were performed on a single-crystal silicon wafer during nanoscratching. A novel criterion based on mechanism of dislocation multiplication and propagation was proposed and validated, providing a better understanding of sub-surface defects prediction in silicon. Compared to conventional sub-surface defects models, this new shear stress-based criterion can accurately predict the position and extent of dislocations in silicon. The dislocations layout for scratching along any direction on the (100) surface of Si were further discussed to offer a comprehensive understanding of the effect of anisotropic structure of single-crystals on the sub-surface defects. The improved understanding of inelastic deformation in single-crystal silicon, which was revealed by this new model, will have a significant impact on the nanomanufacturing sector by guiding the contact mode experiments (grinding, indentation, machining) towards efficient machining.

Mechanism of crack evolution in nano-indentation of single crystal silicon by atomistic simulations and theoretical analysis

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

The Nanoindentation-Induced Cracking of Thin Silicon Chips

Evolution of Nano-Cracks in Single-Crystal Silicon During Ultraprecision Mechanical Polishing

Unveiling the Local Deformation Behavior of Typical Microstructures of Nickel-Based Single Crystals under Nanoindentation

Molecular Dynamics of Nanometric Processing of Ion Implanted Monocrystalline Silicon Surfaces

Atomistic Simulation of Nanoindentation on Incipient Plasticity and Dislocation Evolution in Γ/γ′ Phase with Interface and Void

Nanoindentation Induced Deformation and Pop-in Events in a Silicon Crystal: Molecular Dynamics Simulation and Experiment

Pressure-induced Amorphization in the Nanoindentation of Single Crystalline Silicon

A Plastic Damage Model for Finite Element Analysis of Cracking of Silicon under Indentation

Numerical Study of Three-Body Diamond Abrasive Nanoindentation of Single-Crystal Si by Molecular Dynamics Simulation

Nanoindentation Characterization of Single-Crystal Silicon with Oxide Film

Molecular dynamics simulation of subsurface damage mechanism during nanoscratching of single crystal silicon

Modeling and Simulation of Phase Transformation and Crack Formation During Scribing of Mono-Crystalline Silicon

Microscopic Stress Analysis of Nanoscratch Induced Sub-Surface Defects in a Single-Crystal Silicon Wafer

Simulation Study of Material Deformation in Monocrystal Silicon Nano-Machining

Numerical and experimental investigation on ductile deformation and subsurface defects of monocrystalline silicon during nano-scratching

Effect of stacking fault in silicon induced by nanoindentation with MD simulation

Molecular Dynamics Simulation of the Crystal Orientation and Temperature Influences in the Hardness on Monocrystalline Silicon

Multiscale simulation and Rice-Thomson dislocation model analysis of nanoindentation

Origin and Evolution of a Crack in Silicon Induced by a Single Grain Grinding