Nigel M. Hooper (editor): Alzheimer’s disease. Methods and protocols

R. Cowburn

DOI: https://doi.org/10.1007/s004390100517

2001-05-11

Human Genetics

Abstract:

What problem does this paper attempt to address?

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

Q. Fu,H. F. Zhan,Y. T. Gu

DOI: https://doi.org/10.1166/asl.2012.3997

2012-01-01

Advanced Science Letters

Abstract:Molecular dynamics (MD) simulations have been employed to investigate the single-crystal Si properties with different pre-existing cavities under nanoindentation. Cavities with different radii and positions have been considered. It is found that pre-existing cavities in the Si substrate would obviously influence the mechanical properties of Si under nanoindentation. Furthermore, pre-existing cavities would absorb part of the strain energy during loading and then release during unloading. It would decrease plastic deformation to the substrate. Particularly, the larger of the cavity or the nearer of the cavity to the substrate’s top surface, the larger decrease of Young’s modulus and hardness is usually observed. Just as expected, the larger offset of the cavity in the lateral direction, the less influence is usually seen.
Effect of Nanoindentation Temperature on Plastic Deformation of 3C-SiC Based on the Molecular Dynamics Method

Tao Chen,Le Dong,Jiaqi Yi,Xiang Ning,Wenjie Li,Nanxing Wu

DOI: https://doi.org/10.1155/2022/6036159

IF: 3.791

2022-06-02

Journal of Nanomaterials

Abstract:To explore the effect of nanoindentation temperature on the plastic deformation of 3C-SiC, it is possible to analyze the 3C-SiC load-displacement changes at different temperatures and the dislocation propagation in the plastic deformation stage. The 3C-SiC nanoindentation model is established on the basis of molecular dynamics interatomic interaction potential. The model combines the 3C-SiC crystal structure to optimize the Vashishta potential function and modifies the relaxation system, system boundary, and other simulated environmental factors. The plastic deformation process of 3C-SiC at different temperatures is analyzed from multiple angles such as the load-displacement curve, the stress distribution during the plastic deformation stage of the matrix, and the formation and growth of specimen dislocations. During the pressing process, intermolecular dislocations and stress are concentrated in the elastic-plastic deformation zone. The load value of the elastic-plastic deformation zone under high temperature environment is generally higher, and the energy of the dislocation loop will be released. In the plastic deformation zone, the dislocation loop will break under the action of high temperature environmental load. The premature release of energy will cause the load value to drop. During the pressing process, the bearing capacity of 3C-SiC polycrystalline will decrease as the temperature rises. Plastic deformation occurs inside the material, and dislocations nucleate and expand from the grain boundary to the crystal and finally form a U-shaped dislocation ring.

materials science, multidisciplinary,nanoscience & nanotechnology
Response of mechanical properties and subsurface damage in β-SiC to temperature and crystal plane during nanoindentation simulation

Jingjing Chen,Hao Wu,Shuhua Bai,Jinliang Huang

DOI: https://doi.org/10.1016/j.mssp.2023.107651

IF: 4.1

2023-06-16

Materials Science in Semiconductor Processing

Abstract:A series of theoretical calculations based on molecular dynamics (MD) was carried out to investigate the ceramic material mechanical response of β-SiC. Importantly, the effect of temperature and crystal plane on material mechanical performance, correlative mechanisms of subsurface damage behavior, and otherness in the subsurface layer as well as explored and analyzed at nanoindentation process. MD calculation results show that the ambient temperature rises can promote SiC material dislocation generation, nucleation, and propagation, which leads to the degree of damage in the subsurface layer increases and material brittle failure occurs because of the concentration of internal stress in ceramic material. Moreover, it was discovered that dislocation ring was a microscopic phenomenon of the transformation from elastic deformation to plastic deformation of SiC, and the dislocation ring nucleus, dislocation ring growth, dislocation ring propagation, dislocation ring brittle fracture are the main plastic deformation characteristics of SiC during nanoindentation simulation. In addition, with the increase of temperature, the damage degree of subsurface layer is intensified. The direct driving force could induce partial phase transformation occurs for β-SiC material from cubic sphalerite structure to the hexagonal wurtzite structure. Moreover, the majority of amorphous atoms generated at low temperatures would decrease with increasing temperature. The results of this work can be to enrich understand the details information on dynamic microstructure evolution process, and the corresponding subsurface damage behavior at the atomic scale when materials are subjected to external working loads and extreme temperature.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Molecular dynamics simulation on nanoindentation response of a copper workpiece

Yuan-liu Chen,Yuki Shimizu,So Ito,Wei Gao

2015-01-01

Abstract:Surface damages are caused on a workpiece by a diamond tool during the contact detection process. The contact detection process can be treated as a nanoindentation process. In order to investigate the deformation mechanism of the surface damages caused by the tool-workpiece contact, nanoindentation tests of a copper workpiece with a diamond indenter are carried out by molecular dynamics simulation. By considering the contact time between the indenter and workpiece, the dependence of the indentation shape on the holding time of tool at the maximum indentation depth are observed. In addition, the physical properties of the workpiece are also analyzed in this paper.
Grain Size and Temperature Effects on the Indentation Induced Plastic Deformations of Nano Polycrystalline Diamond

Genchun He,Chao Xu,Chunmei Liu,Huaping Liu,Haikuo Wang

DOI: https://doi.org/10.1016/j.apsusc.2019.02.229

IF: 6.7

2019-01-01

Applied Surface Science

Abstract:Although nano polycrystalline diamond (NPD) is found with hardness equal to, or even higher than that of single crystal diamond, there are still some controversies about its mechanical responses as well as the plastic deformation mechanisms during the indenting processes. Through molecular dynamics simulations, we have investigated the effects of grain size and temperature on the indentations of NPD. Our results indicate that when the grain size is smaller than 10 nm, NPD would soften as the grain size decreases. For the studied grain sizes of 5, 7, and 10 nm, plastic deformations are resulted from the dislocation propagation mode and the atomic disordering mode. For NPD with the studied grain size of 2 nm, its plastic deformation is mainly determined by the atomic disordering of the diamond grains. Our simulations reveal that higher temperatures result in the softening of NPD, and the plastic deformation mechanisms at high temperatures are basically the same with that at 300 K. The results presented in this work not only provide an answer for the questions about the grain size and temperature effects on the mechanical responses of NPD, but also offer insights into plastic deformation mechanisms of NPD, which could provide reference data for the potential applications as well as the design of novel nano structured superhard materials.
0701 Molecular Dynamics Simulation of Nano-Contact Between a Diamond Cutting Tool and a Copper Surface

Yindi Cai,Yuanliu Chen,Yuki Shimizu,So Ito,Wei Gao,Ying Chen

DOI: https://doi.org/10.1299/jsmelem.2015.8._0701-1_

2015-01-01

Abstract:This paper presents molecular dynamics simulation on nanoindentation of diamond indenter on a copper workpiece. Surface damages of the workpiece are caused in the contact detection process for ultra-precision fabrication and form measurement of surface by using a force sensor-integrated fast tool servo. Molecular dynamics simulations are carried out in this paper to theoretically investigate the geometries of the damages due to the contact deformation. Taking into consideration of the holding period at the maximum indentation depth between the loading and the unloading processes, the dependence of the indentation geometry on the holding time are observed. Based on the simulation results, physical properties of the workpiece are also analyzed.
Temperature Effect on Nanotwinned Ni under Nanoindentation Using Molecular Dynamic Simulation

Xi He,Ziyi Xu,Yushan Ni

DOI: https://doi.org/10.1088/1674-1056/acf997

2024-01-01

Chinese Physics B

Abstract:Temperature effect on atomic deformation of nanotwinned Ni (nt-Ni) under localized nanoindentation is investigated in comparison with nanocrystalline Ni (nc-Ni) through molecular simulation. The nt-Ni exhibits enhanced critical load and hardness compared to nc-Ni, where perfect, stair-rod and Shockley dislocations are activated at (11 over bar 1) , (1 over bar 11) and (111 over bar ) slip planes in nt-Ni compared to only Shockley dislocation nucleation at (11 over bar 1) and (1 over bar 11) slip planes of nc-Ni. The nt-Ni exhibits a less significant indentation size effect in comparison with nc-Ni due to the dislocation slips hindrance of the twin boundary. The atomic deformation associated with the indentation size effect is investigated during dislocation transmission. Different from the decreasing partial slips parallel to the indenter surface in nc-Ni with increasing temperature, the temperature-dependent atomic deformation of nt-Ni is closely related to the twin boundary: from the partial slips parallel to the twin boundary (similar to 10 K), to increased confined layer slips and decreased twin migration(300 K-600 K), to decreased confined layer slips and increased dislocation interaction of dislocation pinning and dissociation (900 K-1200 K). Dislocation density and atomic structure types through quantitative analysis are implemented to further reveal the above-mentioned dislocation motion and atomic structure alteration. Our study is helpful for understanding the temperature-dependent plasticity of twin boundary in nanotwinned materials.
Mechanism of crack evolution in nano-indentation of single crystal silicon by atomistic simulations and theoretical analysis

Yuqi Zhou,Houfu Dai,Ping Li

DOI: https://doi.org/10.1177/09544062211006442

2021-05-29

Abstract:The molecular dynamics (MD) model of nano-indentation process was established to study the crack evolution in single crystal during nano-indentation. Two workpieces with different cracks and one workpiece with no crack were selected for indentation simulation in this study. The parameters of atom displacement, coordination number (CN), temperature, potential energy and loading force in the indentation process are analyzed in detail. Cracks were found to close during nano-indentation. Two modes of crack closure are observed: cooperative displacement and indentation failure. The existence of cracks will affect the size of transformation zone and the coordination number of atoms after indentation. Besides, the existence of cracks will reduce the increase of temperature and potential energy, and the closing mode of cracks is found to affect the value of indentation load. In addition, the change of stress with indentation depth at crack tip is calculated by theoretical model. The calculated stress curves reveal the evolution trend of cracks during indentation. These results provide guidance for the production of silicon wafer with higher surface quality.
Mechanical Load-Induced Atomic-Scale Deformation Evolution and Mechanism of SiC Polytypes Using Molecular Dynamics Simulation

Haoxiang Wang,Shang Gao,Renke Kang,Xiaoguang Guo,Honggang Li

DOI: https://doi.org/10.3390/nano12142489

IF: 5.3

2022-07-20

Nanomaterials

Abstract:Silicon carbide (SiC) is a promising semiconductor material for making high-performance power electronics with higher withstand voltage and lower loss. The development of cost-effective machining technology for fabricating SiC wafers requires a complete understanding of the deformation and removal mechanism. In this study, molecular dynamics (MD) simulations were carried out to investigate the origins of the differences in elastic–plastic deformation characteristics of the SiC polytypes, including 3C-SiC, 4H-SiC and 6H-SiC, during nanoindentation. The atomic structures, pair correlation function and dislocation distribution during nanoindentation were extracted and analyzed. The main factors that cause elastic–plastic deformation have been revealed. The simulation results show that the deformation mechanisms of SiC polytypes are all dominated by amorphous phase transformation and dislocation behaviors. Most of the amorphous atoms recovered after completed unload. Dislocation analysis shows that the dislocations of 3C-SiC are mainly perfect dislocations during loading, while the perfect dislocations in 4H-SiC and 6H-SiC are relatively few. In addition, 4H-SiC also formed two types of stacking faults.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Thermal softening-suppressed inter-granular embrittlement of polycrystalline 3C-SiC under diamond cutting

Liang Zhao,Jianguo Zhang,Yufan Fu,Junjie Zhang,Alexander Hartmaier,Tao Sun

DOI: https://doi.org/10.1016/j.matdes.2022.111250

2022-10-14

Abstract:While the deformation behavior of grain boundaries has a strong impact on the mechanical response of polycrystalline materials, investigating the coupled thermal–mechanical properties of grain boundaries in their real formats is crucial for enhancing the ductile machinability of hard brittle polycrystalline ceramic materials. In the present work, we report the thermal softening-suppressed inter-granular fracture, accompanied with enhanced stacking fault formation, increased healing ability of grain boundaries and promoted ductile material removal, in diamond cutting of polycrystalline 3C-SiC at elevated temperatures by multi-scale simulations. Molecular dynamics simulations and experiments of high temperature nanoindentations are performed to derive the temperature-dependent mechanical properties of bulk polycrystalline 3C-SiC. Furthermore, molecular dynamics simulations of Mode I (tension) and Mode II (shearing) loading of a Σ9 {1 2 2} symmetric tilt grain boundary at elevated temperatures are performed to extract the temperature-dependent mechanical properties of grain boundaries in polycrystalline 3C-SiC. A novel finite element model of heat treatment-assisted diamond cutting of polycrystalline 3C-SiC with the comprehensive consideration of thermal properties of both grains and grain boundaries at elevated temperatures is established to reveal the transition of material removal mode, grain boundary failure behavior, cutting force characteristics and chip profile with temperature.

materials science, multidisciplinary
The Simultaneous Determination of the Forces and Viscoelastic Properties of Adsorbed Polymer Layers.

G. Braithwaite,P. Luckham

DOI: https://doi.org/10.1006/JCIS.1999.6298

IF: 9.9

1999-10-01

Journal of Colloid and Interface Science

Abstract:The viscoelastic properties of a solvated adsorbed film of gelatin on glass have been determined by modifying a particle forces apparatus which is a derivative of an atomic force microscope (AFM). Here a particle is attached to the end of an AFM lever. Gelatin is allowed to adsorb to the particle and to a flat glass surface. The surface is driven toward the particle using a piezoelectric ceramic and the deflection of the lever monitored using a laser beam and a position-sensitive photodiode. In the experiments reported here a relatively low frequency oscillation (20-1000 Hz) is superimposed on the linear motion. By examining the in-phase and out-of-phase responses of the particle to the applied oscillation, the viscous and elastic properties of the gap may be determined with separation. This information is obtained simultaneously with the forces of interaction between the gelatin-coated glass surfaces. The data show that a viscous response dominates until the gelatin layers interact. After contact the elastic response increases and dominates at high compression of the adsorbed gelatin layers. Problems concerning the quantitative analysis of the data in terms of viscous and elastic moduli are discussed. Copyright 1999 Academic Press.
Depth-sensing ductile and brittle deformation in 3C-SiC under Berkovich nanoindentation

Liang Zhao,Junjie Zhang,Janine Pfetzing,Masud Alam,Alexander Hartmaier

DOI: https://doi.org/10.1016/j.matdes.2020.109223

2021-01-01

Abstract:The interplay between ductile and brittle deformation modes in hard brittle materials exhibits a strong size effect. In the present work, indentation depth-dependent deformation mechanisms of single-crystal 3C-SiC under Berkovich nanoindentation are elucidated by finite element simulations and corresponding experiments. A novel finite element framework, that combines a crystal plasticity constitutive model for describing dislocation slip-based ductile deformation and a cohesive zone model for capturing crack initiation and propagation-induced brittle fracture, is established. The utilized parameters in the crystal plasticity model of 3C-SiC are calibrated according to the load-displacement curves obtained from corresponding Berkovich nanoindentation experiments. Subsequent finite element simulations and experiments of nanoindentation jointly reveal co-existing microscopic plastic deformation and brittle fracture of 3C-SiC at different indentation depths, which significantly affect the observed macroscopic mechanical response and surface pile-up topography. In particular, the predicted morphology of surface cracks at an indentation depth of 500 nm agrees well with experimental observation, and the correlation of crack initiation and propagation with surface pile-up topography is theoretically analyzed.

materials science, multidisciplinary
Nanoindentation-induced interface behavior between DLC film and monocrystalline silicon substrate at high temperature: A molecular dynamics simulation study

Qingkang Liu,Yufei Hu,Xiaohong Zhu,Liang Peng,Ziyue Wang,Kaihao Huang,Zhen Chen,Wenkai Wu,Yao Zhang

DOI: https://doi.org/10.1016/j.mtcomm.2024.108205

IF: 3.8

2024-02-12

Materials Today Communications

Abstract:Diamond-like carbon (DLC) film is an excellent protective coating material, which has a wide range of applications. The interface behavior between around 1 nm DLC film and the monocrystalline silicon substrate is difficult to characterize through experiments. In this work, the nanoindentation molecular dynamics simulations are performed to investigate the interface behavior between DLC film and the silicon substrate at high temperature. A method for determining the depth of indentation has been proposed. As the temperature increases, the maximum repulsive force between indenter and DLC film decreases, the maximum adhesive force increases. High atomic shear strains locate at the interface between DLC and monocrystalline silicon during indentation process. High temperature enlarges the atomic strain distribution region. The number of holes in the monocrystalline silicon substrate increases with increase of temperature after indentation process. The evolution processes of silicon atomic structures have been revealed. Both the repulsive force and adhesive force in the indentation process contribute the silicon phase transformation. But the final silicon atom bonding structure and pop-out phenomena are determined by the adhesive force during the unloading process.

materials science, multidisciplinary
Microscopic residual stress evolution at the SiC/Al interface during nanoindentation via molecular dynamics simulation

Yuxin Liu,Qingping Wang,Chunyang Lu,Tingting Xue,Biao Hu,Chao Zhang

DOI: https://doi.org/10.1016/j.surfin.2022.102210

IF: 6.2

2022-10-01

Surfaces and Interfaces

Abstract:We investigated the evolution of structure and microscopic residual stress at the SiC/Al interface at the atomic scale during nanoindentation by using molecular dynamics simulations. We find that microscopic residual stresses mainly distribute in the interface region, especially the SiC side ranging from 50 to 60 GPa after relaxation. During nanoindentation, there is a large microscopic residual stress concentration at the indentation area. The microscopic residual stress of the SiC side at the indentation area is more serious than that of the Al side. It is found that some SiC atoms in the indentation region are extruded from the SiC side by the indenter, and the fractured SiC atoms are subjected continuously by the indenter, which accelerates the evolution of structure and microscopic residual at the SiC/Al interface. The fractured SiC atoms aggravate the microscopic residual stress concentration at the SiC/Al interface. Al may release some of the microscopic residual stresses by plastic deformation, while the SiC can only reduce the microscopic residual stress by fracture. Therefore, it is necessary to remove the fractured SiC atoms in time to prevent more complex microscopic residual stresses and to improve the machining process of SiC/Al composites.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Effect of crystal orientation and temperature on the mechanical properties and fracture mechanism of silicon carbide nanowires

Mengan Cao,Zhaofeng Chen,Le Lu,Shijie Chen,Zhudan Ma,Lixia Yang

DOI: https://doi.org/10.1007/s11051-023-05899-9

IF: 2.533

2023-11-23

Journal of Nanoparticle Research

Abstract:Silicon carbide nanowires (SiC NWs) are widely used as reinforcing materials in composite materials based on ceramics, metals, and polymers, and their high-temperature mechanical properties have become a focus of attention. In this paper, the effect of temperature and crystal orientation on the tensile mechanical behavior of SiC NWs was explored through molecular dynamics simulation. It is observed that the fracture mode and mechanical properties of SiC NWs express a significant temperature dependence. Both critical stress and Young's modulus of nanowires with different orientations decrease with increasing temperature and the [111]- and [112]-oriented nanowires exhibit brittle fracture characteristics at low temperatures and become ductile fractures at high temperatures. The transition temperature for ductile–brittle fracture is between 1300-1800 K. The fracture surfaces of SiC NWs with different orientations are all {111} planes at low temperatures. This study provides theoretical support for SiC NWs' laboratory growth and toughening mechanism research.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Atomic-scale deformation behavior of SiC polytypes using molecular dynamics simulation

Kaili Yin,Yesheng Zhong,Liping Shi,Xiaoliang Ma,Hongchi Zhang,Xiaodong He

DOI: https://doi.org/10.1016/j.mtcomm.2024.110406

IF: 3.8

2024-09-22

Materials Today Communications

Abstract:The atomic-scale deformation behavior of the Silicon carbide (SiC) polytypes, including 3 C-SiC and 4 H-SiC, during the nanoindentation with different square-based pyramid indenter angles was investigated by molecular dynamics (MD) simulations. Detailed analyses were conducted on atomic displacement magnitude, atomic structure, radial distribution function and dislocation distribution were analyzed in-depth in both loading and unloading processes. The results show that the indentation deformation phenomenon of ''pile-up'' occurs with indenter angles below 120°. Maximum load shows a non-linear increase trend as the indenter angles increase. The residual depth of the 3 C polytype has insignificant fluctuations while that of the 4 H polytype generally increases as the angle decreases and fluctuates at the indenter angles of 100° ∼ 110°. The number of amorphous atoms in 4 H is greater than that of 3 C polytype. Most of the amorphous atoms recover to their original structure after the indenter is fully withdrawn. Dislocation analysis indicates that the total length of dislocation lines increases with larger indenter angles. The length of the 3 C dislocation line is greater than that of 4 H. At the same indenter angle, the dislocation slip depth of 3 C polytype is greater than that of 4 H polytype due to the different lattice stacking order of 3 C polytype is greater than that of 4 H polytype due to the different lattice stacking order.

materials science, multidisciplinary
Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial correlation

Daxi Guo,Ignacio Martin-Bragado,Chaohui He,Hang Zang,Peng Zhang

DOI: https://doi.org/10.1063/1.4902145

2015-01-12

Abstract:Based on the parameters from published ab-inito theoretical and experimental studies, and combining Molecular Dynamics (MD) and kinetic Monte Carlo (KMC) simulations, a framework of multi-scale modeling is developed to investigate the long-term evolution of displacement damage induced by heavy-ion irradiation in cubic silicon carbide. The isochronal annealing after heavy ion irradiation is simulated, and the annealing behaviors of total interstitials are found consistent with previous experiments. Two annealing stages below 600K and one stage above 900K are identified. The mechanisms for those recovery stages are interpreted by the evolution of defects. The influence of the spatial correlation in primary damage on defect recovery has been studied and found insignificant when the damage dose is high enough, which sheds light on the applicability of approaches with mean-field approximation to the long-term evolution of damage by heavy ions in SiC.

Materials Science
Molecular dynamics simulation of subsurface damage mechanism during nanoscratching of single crystal silicon

Houfu Dai,Shaobo Li,Genyu Chen

DOI: https://doi.org/10.1177/1350650118765351

2018-03-27

Abstract:Three-dimension molecular dynamics (MD) simulation is employed to investigate the nanoscratching process of monocrystalline silicon with diamond tools. The effects of tool geometry on subsurface damage and scratching surface integrity are investigated by analyzing phase transformation, chip, defect atoms, hydrostatic stress, von Mises stress and workpiece deformation. In addition, a theoretical analytical model to study the subsurface damage mechanism by analyzing the zone size of phase transformation and normal force with diamond tools at different half-apex angles on silicon surfaces is established. The results show that a bigger half apex angle causes a higher hydrostatic stress, a larger chip volume, a higher temperature and a higher potential energy, and increases subsurface damage. The results also reveal that the evolution of crystalline phases is consistent with the distribution of hydrostatic stress and temperature. In addition, tip scratching with a bigger half-apex angle would result in a larger scratching force and a bigger phase transformation zone, which is in good agreement with the results of the theoretical analytical model.
Study on nanometer cutting mechanism of single crystal silicon at different temperatures

Guigen Ye,Peng Zhang,Jiansheng Zhang,Yi Zhang,Xiaoguang Huang

DOI: https://doi.org/10.1016/j.jmapro.2023.03.026

IF: 5.684

2023-03-29

Journal of Manufacturing Processes

Abstract:Thermal-assisted single point diamond turning technology is currently one of the most important methods for realizing nano-scale machining. However, the nano-chip formation mechanism as the core of the nano-cutting mechanism is still unclear, which limits the development of this advanced technology. In this study, based on the molecular dynamics simulations, the nano cutting behaviour of single crystal silicon at different temperatures were studied. The cutting force, crystal structure, particle motion characteristics, stress-strain distribution and temperature distribution during chip formation process were systematically analyzed. The underlying mechanism of nano-chip formation in single crystal silicon was summarized. The results showed that the chip formation mechanism can be divided into two types: crack and shear. At low temperatures, chips are formed by crack propagation. The concentrated distribution of high stress triaxiality and local high temperatures at the crack tip are the main causes of crack propagation. With an increase in temperature, the chip formation mode gradually changed from crack to shear. The highly resolved shear stress distributed along the slip plane is the main reason for the expansion of the amorphous bands. In addition, it's found that higher quality machined surfaces can be obtained through chip formation process by shear than by crack.

engineering, manufacturing
Effect of dislocation defects on the nano-scratching process of 4H–SiC

Yixiang Wang,Haiyang Ding,Ningchang Wang,Yuxiang Huang,Yiqing Yu,Hui Huang,Nian Duan

DOI: https://doi.org/10.1016/j.wear.2024.205343

IF: 4.695

2024-03-01

Wear

Abstract:To investigate the influence of defects on the damage mechanism of 4H–SiC, this study primarily conducted molecular dynamics simulations of a single diamond abrasive indentation process and carried out subsequent nanoindentation experiments on 4H–SiC samples. The simulation and experimental results were compared, and the force–displacement curves showed consistent trends. On this basis, the scratching simulation of an ideal material and a single diamond abrasive particle containing 4H–SiC with dislocation defects was carried out to study the influence of internal dislocation (screw dislocation and edge dislocation) in 4H–SiC and its position on the material damage mechanism during scratching, and the development and evolution of internal dislocation were further analyzed. The results reveal that the presence of internal dislocations in the material is one of the causes of the formation of dislocation loops.

engineering, mechanical,materials science, multidisciplinary

Nigel M. Hooper (editor): Alzheimer’s disease. Methods and protocols

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

Effect of Nanoindentation Temperature on Plastic Deformation of 3C-SiC Based on the Molecular Dynamics Method

Response of mechanical properties and subsurface damage in β-SiC to temperature and crystal plane during nanoindentation simulation

Molecular dynamics simulation on nanoindentation response of a copper workpiece

Grain Size and Temperature Effects on the Indentation Induced Plastic Deformations of Nano Polycrystalline Diamond

0701 Molecular Dynamics Simulation of Nano-Contact Between a Diamond Cutting Tool and a Copper Surface

Temperature Effect on Nanotwinned Ni under Nanoindentation Using Molecular Dynamic Simulation

Mechanism of crack evolution in nano-indentation of single crystal silicon by atomistic simulations and theoretical analysis

Mechanical Load-Induced Atomic-Scale Deformation Evolution and Mechanism of SiC Polytypes Using Molecular Dynamics Simulation

Thermal softening-suppressed inter-granular embrittlement of polycrystalline 3C-SiC under diamond cutting

The Simultaneous Determination of the Forces and Viscoelastic Properties of Adsorbed Polymer Layers.

Depth-sensing ductile and brittle deformation in 3C-SiC under Berkovich nanoindentation

Nanoindentation-induced interface behavior between DLC film and monocrystalline silicon substrate at high temperature: A molecular dynamics simulation study

Microscopic residual stress evolution at the SiC/Al interface during nanoindentation via molecular dynamics simulation

Effect of crystal orientation and temperature on the mechanical properties and fracture mechanism of silicon carbide nanowires

Atomic-scale deformation behavior of SiC polytypes using molecular dynamics simulation

Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial correlation

Molecular dynamics simulation of subsurface damage mechanism during nanoscratching of single crystal silicon

Study on nanometer cutting mechanism of single crystal silicon at different temperatures

Effect of dislocation defects on the nano-scratching process of 4H–SiC