Abstract:Cubic silicon carbide (3C-SiC) has been selected as candidate structural and cladding materials for advanced nuclear systems due to its excellent properties. The influence of external mechanical load, thermal stress and radiation damage induced stress/strain field on radiation behavior in 3C-SiC is not well understood. In this work, the primary radiation damages in 3C-SiC under strain field have been investigated with molecular dynamics (MD) simulation. The results demonstrate that the strain field is of significant importance on the radiation damages in 3C-SiC. The threshold displacement energy decreases with strain from compression to tension. During displacement cascade and annealing, the surviving defect, defect clustered fraction and cluster size increase at the tensile state, while the defect recombination ratio decreases. Among the generated point defects, the vacancy and interstitial contribute to the majority of defect production increase under tensile strain. The higher energy of primary knock-on atom (PKA) results in more defect production but suffers from the same strain effect. High temperature increases the defect recombination ratio but reduces the surviving defect number during both displacement cascade and annealing process. Comparing with compressive state, tensile state exhibits a more significant temperature effect on defect production and recombination in displacement cascades, while a less significant temperature effect on defect cluster. All these results indicate that the influence of stress/strain state, especially tensile state, should be seriously taken into account for the application of SiC in nuclear reactor environment.

The Tensile Effect on Crack Formation in Single Crystal Silicon Irradiated by Intense Pulsed Ion Beam

Influence of Applied Tensile/Compressive Stress on He-Irradiated SiC: Examining Defect Evolution Through Experimental Investigation and DFT Simulations

The Interaction and the Surface Crack of Single-Crystal Silicon Induced by A Millisecond Laser

Fracture analysis of surface exfoliation on single crystal silicon irradiated by intense pulsed ion beam

Dynamic Deformation and Fracture of Single Crystal Silicon: Fracture Modes, Damage Laws, and Anisotropy

Direct simulation of ion beam induced stressing and amorphization of silicon

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Anisotropy Effect of Crater Formation on Single Crystal Silicon Surface under Intense Pulsed Ion Beam Irradiation

Simulation Of Near-Crack-Tip Strain Fields On Single-Crystal Silicon Wafer

Numerical simulation and validation of subsurface modification and crack formation induced by nanosecond-pulsed laser processing in monocrystalline silicon

Novel microstructures on the surfaces of single crystal silicon irradiated by intense pulsed ion beams

Fracture Behavior During Pulsed Laser Irradiating Silicon Wafer

Effects of temperature and strain rate on dynamic crack propagation in brittle silicon

Effect of Strain Rate on Tensile Behavior of Cubic Silicon Carbide by Molecular-Dynamics Simulation

Cracking in semiconductor devices–effect of plasticity under triaxial constraint

In-situ SEM investigation of sub-microscale deformation fields around a crack-tip in silicon

A Numerical Study of Cracks Appearance on Tungsten Surface after High Intense Pulsed Ion Beam Irradiation

The Damage Morphology of Momocrystal Silicon Irradiated by Continuous Wave Fiber Laser

Dependence of Critical Stress Intensity Factor on Crack Depth From the Loading Boundary of Crystalline Silicon

Primary Radiation Damage in 3C-Sic under Strain Field Studied with Molecular Dynamics Simulation

Damage Production in Silicon Carbide by Dual Ion Beams Irradiation