Abstract:Using molecular dynamics (MD) simulation, we investigate the mechanical response of silicon to high dose ion-irradiation. We employ a realistic and efficient model to directly simulate ion beam induced amorphization. Structural properties of the amorphized sample are compared with experimental data and results of other simulation studies. We find the behavior of the irradiated material is related to the rate at which it can relax. Depending upon the ability to deform, we observe either the generation of a high compressive stress and subsequent expansion of the material, or generation of tensile stress and densification. We note that statistical material properties, such as radial distribution functions are not sufficient to differentiate between different densities of amorphous samples. For any reasonable deformation rate, we observe an expansion of the target upon amorphization in agreement with experimental observations. This is in contrast to simulations of quenching which usually result in denser structures relative to crystalline Si. We conclude that although there is substantial agreement between experimental measurements and most simulation results, the amorphous structures being investigated may have fundamental differences; the difference in density can be attributed to local defects within the amorphous network. Finally we show that annealing simulations of our amorphized samples can lead to a reduction of high energy local defects without a large scale rearrangement of the amorphous network. This supports the proposal that defects in amorphous silicon are analogous to those in crystalline silicon.

Fracture analysis of surface exfoliation on single crystal silicon irradiated by intense pulsed ion beam

The Tensile Effect on Crack Formation in Single Crystal Silicon Irradiated by Intense Pulsed Ion Beam

A Numerical Study of Cracks Appearance on Tungsten Surface after High Intense Pulsed Ion Beam Irradiation

Novel microstructures on the surfaces of single crystal silicon irradiated by intense pulsed ion beams

Anisotropy Effect of Crater Formation on Single Crystal Silicon Surface under Intense Pulsed Ion Beam Irradiation

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Fracture Mechanics Analysis of Three-Dimensional Ion Cut Technology

Atomic-Level Modeling of A Silicon Nanofilm Irradiated by Ultrashort-Pulsed Laser Bursts

Numerical simulation and validation of subsurface modification and crack formation induced by nanosecond-pulsed laser processing in monocrystalline silicon

Fracture Mechanics Analysis on Smart-Cut ® Technology. Part 1: Effects of Stiffening Wafer and Defect Interaction

Phase Field Modeling of Irradiation-induced Shrinkage Fracture in TRISO Fuel Particle

Thermal deformation of cryogenically cooled silicon crystals under intense X-ray beams: measurement and finite-element predictions of the surface shape

Fracture Analysis of Griffith Interface Crack in Fine-Grained Piezoelectric Coating/Substrate under Thermal Loading

Nonadiabatic Study Of Dynamic Electronic Effects During Brittle Fracture Of Silicon

Effect of Ion Irradiation on Nanoindentation Fracture and Deformation in Silicon Carbide

The thermodynamical process in metal surface due to the irradiation of intense pulsed ion beam

Direct simulation of ion beam induced stressing and amorphization of silicon

Modelling Nano-Indentation of Ion-Irradiated FCC Single Crystals by Strain-Gradient Crystal Plasticity Theory

Effect of Crystallographic Orientation on Structural Response of Silicon to Femtosecond Laser Irradiation

Molecular Dynamics Simulation of High-Energy Beam Irradiation of SiO 2 Single Crystal with Three Different Morphologies: No Free Surface, with a Free Surface, and Thin Films