Coarse-grained simulations of single-crystal silicon

Liming Xiong,Youping Chen
DOI: https://doi.org/10.1088/0965-0393/17/3/035002
IF: 2.421
2009-02-05
Modelling and Simulation in Materials Science and Engineering
Abstract:An atomistic-continuum field theory (AFT) and its applications in coarse-grained (CG) simulations of single-crystal silicon are presented in this paper. Formulation of AFT and its finite element (FE) implementations are introduced. The robustness and stability of the numerical implementation are demonstrated through the simulations of dynamic wave propagation, meeting and separation in silicon. Under uniaxial tension, the elastic constant and the tensile strength of single-crystal silicon are measured. The internal deformations within the unit cells are monitored during the loading process. It is observed that there is a critical bond stretch with the onset of the material instability. Under a critical uniaxial compressive loading, silicon undergoes a first-order phase transition from the diamond structure to the metallic ?-Sn structure. Under three-point bending, the local stress and strain are measured. In this paper, all the CG simulation results are also directly compared with molecular dynamics (MD) simulation results. Although the majority of the degrees of freedom have been eliminated, it is shown that CG simulations with linear FE shape functions are able to simulate nonlinear large-deformation material behavior with good accuracy. However, with the occurrence of material instability, CG simulations will no longer be able to capture the localized phenomena such as dislocations or stacking fault.
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