Abstract:In spite of remarkable developments in the field of advanced materials, silicon remains one of the foremost semiconductors of the day. Of enduring relevance to science and technology is silicon's nanomechanical behaviour including phase transformation, amorphization and dislocations generation, particularly in the context of molecular dynamics and materials research. So far, comprehensive modelling of the whole cycle of events in silicon during nanoscale deformation has not been possible, however, due to the limitations inherent in the existing interatomic potentials. This paper examines how well an unconventional combination of two well-known potentials - the Tersoff and Stillinger-Weber - can perform in simulating that complexity. Our model indicates that an irreversible deformation of silicon (Si-I) is set in motion by a transformation to a non-diamond structure (Si-nd), and followed by a subsequent transition to the Si-II and Si-XII phases (Si-1→Si-nd→Si-II→Si-XII). This leads to the generation of dislocations spreading outwards from the incubation zone. In effect, our simulations parallel the structural changes detected experimentally in the deformed material. This includes both the experimentally observed sequence of phase transitions and dislocation activity, which - taken together - neither the Tersoff nor Stillinger-Weber, or indeed any other available Si interatomic potential, is able to achieve in its own right. Notably, the Si-XII phase was not discerned by any of the previous computational models, which points towards the effectiveness of our integrated approach to forecasting novel phenomena discovered by advanced structure examinations. Last not least, our method satisfies the demand for a quick means to construct potentials by opening up the huge library of existing models to new applications in various branches of materials science.

Environment Dependent Interatomic Potential for Bulk Silicon

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

Thermodynamic Behavior of a Model Covalent Material Described by the Environment-Dependent Interatomic Potential

Comprehensive structural changes in nanoscale-deformed silicon modelled with an integrated atomic potential

Double lattice potential for molecular dynamics simulation of silicon with demonstrated validity

Coarse-grained simulations of single-crystal silicon

Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

Comparison and Assessment of Different Interatomic Potentials for Simulation of Silicon Carbide

Analytic elastic coefficients in molecular calculations: Finite strain, nonaffine displacements, and many-body interatomic potentials

A Comprehensive Ab Initio Study of Electronic, Optical and Cohesive Properties of Silicon Quantum Dots of Various Morphologies and Sizes up to Infinity

Extreme Elastic Deformation of Atoms and Pressure-Induced Superconductivity in Silicon

Uncertainty Quantification in Atomistic Simulations of Silicon using Interatomic Potentials

Modeling of Covalent Bonding in Solids by Inversion of Cohesive Energy Curves

Self-Consistent and Environment-Dependent Hamiltonians for Materials Simulations : case Studies on Silicon Structures

Atomistic simulations of carbon diffusion and segregation in liquid silicon

Ab Initio Interatomic Potentials and Lattice Dynamics of C,Si and Ge

Critical assessment of machine-learned repulsive potentials for the density functional based tight-binding method: A case study for pure silicon

Model for the on-site matrix elements of the tight-binding hamiltonian of a strained crystal: Application to silicon, germanium and their alloys

Transferability of force fields for 2D silicon (silicene)

Atomistic Simulations of Elastic and Plastic Properties in Amorphous Silicon

Atomistic simulation of nearly defect-free models of amorphous silicon: An information-based approach