Abstract:A number of computational methods have been developed over the last 40 years to simulate the behavior of solid materials with small dimensions. On the macro-scale, Finite Element analysis calculates mechanical stress on micron-sized cantilevers and motors. On the atomic level, newer ab initio methods compute nuclear and electronic behavior of hundred atom models with unprecedented rigor. By implementing the laws of classic mechanics, empirical Molecular Dynamics (MD) programs help bridge these two computational extremes. MD identifies nonelectronic, particle motion for large 100,000 atom cells with good success. MD derives both equilibrium and nonequilibrium properties for many complex condensed regimes; quantitatively (and qualitatively) reaffirms empirical data; aids discovery of new materials processing techniques, and helps predict unknown physical phenomena often only observable under extreme environmental settings. One material of great technical importance to the semiconductor industry is silicon (Si). This element and its oxide (SiO2) play key roles in Complementary Metal-Oxide Semiconductor (CMOS) integrated circuits and in Silicon on Insulator (SOI) technology. Thousands of publications of the structure and function of Si and SiO2 fill the literature. Hundreds of these employ Molecular Dynamics. Herein, we describe the MD process; its particular application to these two materials; explore past research and propose possible directions for future work. While no review can fully comprehend or thoroughly evaluate the entire bibliographic mass, this report provides a starting point for researchers interested in the field. It attempts to uncomplicate the oft-complex mathematics and physics frequently associated with the subject. Little prior knowledge of classic Molecular Dynamics is needed. Although most information is taken directly from MD-related theory, results from experimental or non-MD-related work are occasionally added to help fill in gaps. Finally, because details of every simulation and experiment cited herein cannot be made, the reader is encouraged to refer to specific bibliographic references whenever necessary.

Self-Consistent and Environment-Dependent Hamiltonians for Materials Simulations : case Studies on Silicon Structures

MD Simulation and Transport Property Analysis of Silicon in High-Temperature Molten Fluoride Salts Electrolyte

Monte Carlo Simulation of Electron Transport in Silicon Carbide

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

Thermodynamic Behavior of a Model Covalent Material Described by the Environment-Dependent Interatomic Potential

Empirical Molecular Dynamics Modeling of Silicon and Silicon Dioxide: A Review

Environment Dependent Interatomic Potential for Bulk Silicon

Consistent Wide-Range Equation of State of Silicon by a Unified First-Principles Method

A Comprehensive Ab Initio Study of Electronic, Optical and Cohesive Properties of Silicon Quantum Dots of Various Morphologies and Sizes up to Infinity

Energetics of hydrogen/lithium complexes in silicon analyzed using the Maxwell construction

High harmonic studies of structural phase transitions in silicon

The cell-centered Finite-Volume self-consistent approach for heterostructures: 1D electron gas at the Si-SiO2interface

The Cell-Centered Finite-Volume Self-Consistent Approach for Heterostructures: 1D Electron Gas at the Si–SiO2 Interface

Effects of self-consistent extended Hubbard interactions and spin-orbit couplings on energy bands of semiconductors and topological insulators

Determining Surface Phase Diagrams Including Anharmonic Effects

Electronic Correlations in Multielectron Silicon Quantum Dots

Recent developments and applications of reference interaction site model self-consistent field with constrained spatial electron density (RISM-SCF-cSED): A hybrid model of quantum chemistry and integral equation theory of molecular liquids

Molecular Simulation of Covalent Bond Dynamics in Liquid Silicon

Combined Semiclassical And Effective-Mass Schrodinger Approach For Multiscale Analysis Of Semiconductor Nanostructures

Bridging lattice-scale physics and continuum field theory with quantum Monte Carlo simulations

Finite-Volume Self-Consistent approach for electronic properties at ultra-low temperatures: Theory and application to 1D electron gas at the Si-SiO2 interface