Abstract:The semiconductor industry is undergoing a transformative phase, marked by the relentless drive for miniaturization and a constant demand for higher performance and energy efficiency. However, the reduction of metal–oxide–semiconductor field-effect transistor sizes for advanced technology nodes below 10 nm presents several challenges. In response, strained silicon technology has emerged as a key player, exploiting strain induction in the silicon crystal lattice to improve device performance. At the same time, there has been a growing need for characterization techniques that allow in-line monitoring of sample conditions during semiconductor manufacturing, as an alternative to traditional methods such as transmission electron microscopy or high-resolution X-ray diffraction, which have several limitations in terms of measurement time and sample destructiveness. This paper explores the application of advanced spectroscopic characterization techniques, in particular μ-Raman spectroscopy and tip-enhanced Raman spectroscopy (TERS), to meet the evolving needs of the semiconductor industry for quality control and failure analysis, increasingly requiring faster and non-destructive characterization techniques. μ-Raman provides insight into strain values and distributions of strained layers with different thicknesses and germanium concentrations, but its lateral resolution is constrained by the Abbe diffraction limit. TERS, on the other hand, emerges as a powerful non-destructive technique capable of overcoming diffraction limits by exploiting the combination of an atomic force microscope with a Raman spectrometer. This breakthrough makes it possible to estimate the chemical composition and induced strain in the lattice by evaluating the Raman peak position shifts in strained and unstrained silicon layers, providing crucial insights for nanoscale strain control. In particular, this paper focuses on the TERS characterization of Si 0.7 Ge 0.3 epitaxial layers grown on a silicon-on-insulator device, demonstrating the effectiveness of this technique and the high lateral resolution that can be achieved.

Process Characterization for Strained Si on SOI CMOS Devices

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Fabrication and Characterization of Uniaxially Strained SOI with Wafer Level by Mechanical Bending and Annealing

Strain relaxation in patterned strained silicon directly on insulator structures

Strain effect in silicon-on-insulator materials: Investigation with optical phonons

Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing

Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

Strained Silicon Technology: Non-Destructive High-Lateral-Resolution Characterization Through Tip-Enhanced Raman Spectroscopy

The Formation Mechanism of Globally Biaxial Strain in He+ Implanted Silicon-on-insulator Wafer Based on the Plastic Deformation and Smooth Sliding of Buried SiO2 Film

Fabrication of Strain Relaxed Silicon-Germanium-on-Insulator (Si 0.35 Ge 0.65 OI) Wafers using Cyclical Thermal Oxidation and Annealing

Strain Relaxation in Ultrathin SGOI Substrates Fabricated by Multistep Ge Condensation Method

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Composition and stress analysis in Si structures using micro-raman spectroscopy

Characterization Of Strained Si/Si1-Xgex/Si Heterostructures Annealed In Oxygen Or Argon

Experimental Analyses on Multiscale Structural and Mechanical Properties of Ε-Si/gesi/c-si Materials

Retarded Thermal Oxidation of Strained Si Substrate

Finite Element Simulation of Stress Distribution and Strain Model Optimization for Strain-Inducing SOI Wafers with Highly Stressed SiN Films

Strained-Si N-Mos Surface-Channel and Buried Si0.7Ge0.3 Compressively-Strained P-Mos Fabricated in a 0.25μm Heterostructure CMOS Process

Structural and electrical characterization of Al2O3/HfO2/Al2O3 on strained SiGe

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Different Strain Relaxation Mechanisms in Strained Si/Si1−xGex/Si Heterostructures by High Dose B+ and BF2+ Doping