Abstract:As the size of an electronic element shrinks to nanoscale, trench design of Si strongly influences the performance of related semiconductor devices. By reactive force field molecular dynamics (ReaxFF MD) simulation, the initial stage oxidation on nano-trenched Si(100) angled 60 degrees, 90 degrees, 120 degrees, 150 degrees under temperatures from 300 K to 1200 K has been studied. Inhomogeneous oxidation at the convex-concave corners of the Si surface was observed. In general, the initial oxidation process on the Si surface was that, firstly, the O atoms ballistically transported into surface, then a high O concentration induced compressive stress at the surface layers, which prevented further oxidation. Compared to the concave corner, the convex one contacted a larger volume of oxygen at the very beginning stage, leading an anisotropic absorption of O atoms. Afterwards, a critical compression was produced at both the convex and concave corners to limit the oxidation. As a result, an inhomogeneous oxide film grew on nano-trenched Si. Meanwhile, due to enhanced O transport and compression relaxation by increasing temperature, the inhomogeneous oxidation was more obvious under 1200 K. These present results explained the observed experimental phenomena on the oxidation of non-planar Si and provided an aspect on the design of nano-trenched electronic components in the semiconductor field.

Retarded Thermal Oxidation of Strained Si Substrate

Thermal-mechanical Coupling Effect on Initial Stage Oxidation of Si(100) Surface

Retardation of strain relaxation in Si/SiGe/Si heterostructures during high temperature oxidation

Process Characterization for Strained Si on SOI CMOS Devices

Characterization Of Strained Si/Si1-Xgex/Si Heterostructures Annealed In Oxygen Or Argon

Understanding of the retarded oxidation effects in silicon nanostructures

ReaxFF Molecular Dynamics Simulation on Oxidation Behaviors of 3C‐SiC: Uniaxial Strain Effect

Initial stage oxidation on nano-trenched Si(1 0 0) surface

Oxidation Induced Stress In Sio2/Sic Structures

Strain relaxation in patterned strained silicon directly on insulator structures

Coupled Mechanical-Oxidation Modeling During Silicon Thermal Oxidation Process

Study Of Dry Oxidation Of Triangle-Shaped Silicon Nanostructure

Electrical properties and temperature behavior of strained-Si N-MOSFETs

Thermal Annealing Effects on a Compositionally Graded SiGe Layer Fabricated by Oxidizing a Strained SiGe Layer

A New Method of Fabricating Strained Silicon Materials

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Strain-modulated Early Stage Oxidation of Fe Films

Effects of Strain on Thermal Conductivity of Silicon Dioxide Thin Films Using Test Method Based on 3-Ω Technique and Uniaxial Strain Setup.

Understanding the Relationship Between Stress Change and Electrochemical Performance of a Heated SiO Anode Through in Situ Raman Spectrum

Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped Sno2 Thin-Film

Strain-induced I-V characteristics modulation of p-n junctions and MOS capacitors in Si CMOS devices