Abstract:SiC nanowires (SiC NWs) possess both high thermal stability of SiC ceramic and one-dimensional nanoscale features, which makes them highly attractive as reinforcements in ceramics or building units in resilient ceramic nanowires aerogels (NWAs) as well as blocks for electronic nanodevices. Understanding the oxidation behavior of SiC NWs at high temperatures is essential for their practical applications. Herein, we investigated the oxidation behavior of SiC NWs at 900-1200 degrees C in air. Two oxidation stages were found, including an initial stage controlled by the reaction between oxygen and SiC at the SiO2/SiC interface and a subsequent oxygen diffusion-dependent stage. The oxide scale thickness was strongly influenced by the radius of the SiC NWs. With the increase of the NW radius from 40 to 120 nm, the oxidation activation energy of the oxidation process increases from 84.05 to 98.32 kJ/mol. The thermal insulation performances of SiC NWA, which is composed of SiC NWs, have been improved after oxidation. The evolution of the thermal insulation performance of SiC NWA during oxidation is consistent with the trends of the growth of the amorphous oxide layer, which indicates that exploring the oxidation kinetics is of great significance in understanding the high-temperature behavior of SiC NW-based materials. The present work provides insight into exploring the size effects on oxidation of SiC NWs, which may be helpful to further understanding the high-temperature applications of SiC NWA.

Study on Thermal Oxidation of Si Nanowires

Ultrafast growth of single-crystalline Si nanowires

Oxidation Behavior of SiC Nanowires: A Nanowire Radius‐dependent Growth of Oxide Scale Thickness

Study Of Dry Oxidation Of Triangle-Shaped Silicon Nanostructure

Microstructure and High Temperature Oxidation Resistance of Mixed Long Si3N4 Nanowires with Wide Diameter Distribution

Raman Investigation of Oxidation Mechanism of Silicon Nanowires

Tiny SiO2 nano-wires synthesized on Si (111) wafer

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Tiny SiO2 nano-wires synthesized on Si (1 1 1 ) wafer

Crystallization and Disappearance of Defects of the Annealed Silicon Nanowires

Top-Down Fabrication of Shape Controllable Si Nanowires Based on Conventional Cmos Process

Crystallization and Raman Shift of Array-Orderly Silicon Nanowires after Annealing at High Temperature

Silicon nanowires fabricated by thermal evaporation of silicon monoxide

Tuning the morphologies of SiC nanowires via the control of growth temperature, and their photoluminescence properties.

Two-Dimensional Self-Limiting Wet Oxidation of Silicon Nanowires: Experiments and Modeling

A growth mechanism of Si nanowires synthesized by gas condensation of SiO without any catalyst

Germanium-Rich SiGe Nanowires Formed Through Oxidation of Patterned SiGe FINs on Insulator

Synthesis and Characterization of Amorphous SiO2 Nanowires Via Pulsed Laser Deposition Accompanied by N2 Annealing

A novel morphology of SiOx nanowires with a modified diameter

Realization of Silicon Quantum Wires by Selective Chemical Etching and Thermal Oxidation

Tuning the Fluorescence Intensity and Stability of Porous Silicon Nanowires Via Mild Thermal Oxidation