Abstract:So far, intrinsic hydrogenated amorphous silicon (a-Si:H(i)) has been commonly used below molybdenum oxide (MoOx) to form a good contact. An a-Si:H(i)/MoOx stack gives good surface passivation, but often results in poor carrier selectivity after exposure to slightly elevated temperatures >130 °C (Geissbühler et al., 2015) [1]. For this reason, we have investigated an alternative interface layer, a very thin Al2O3 tunneling layer (<2 nm), deposited by atomic layer deposition (ALD), that can provide surface passivation, higher transparency and thermal stability without affecting the hole transport across the contact. To demonstrate this new passivating contact a 6" moly-poly cell, with an Al2O3/MoOx stack at the front side and n-type doped polysilicon at the rear side, was made using a high- throughput spatial ALD tool, and E-beam PVD, for the Al2O3 and MoOx layers, respectively. This resulted in an efficiency of 18.2% with a Voc of 651 mV, a FF of 75.6% and a Jsc of 36.9 mA/cm2. A post-deposition anneal (PDA) of the thin Al2O3 interlayer has significant effect on the Al2O3 thickness, layer stoichiometry, contact selectivity, and sputtering-induced damage. Annealing at higher TPDA (350–600 °C) results in ineffective hole carrier transport and makes the stack more sensitive to ITO damage. The best performing device was, therefore, made using an Al2O3 layer without a PDA treatment. Moreover, we have found that this solar cell structure is thermally stable up to at least 210 °C, and even slightly improves under annealing which makes this device industrially appealing.

Study on the Thermal Stability of Molybdenum Oxide‐Passivated Silicon Solar Cells

Investigation in Feasibility of Molybdenum As A Back Contact Layer for Silicon Based Quantum Dot Solar Cells

Low Oxygen Content MoOx and SiOx Tunnel Layer Based Heterocontacts for Efficient and Stable Crystalline Silicon Solar Cells Approaching 22% Efficiency

Solution-processed molybdenum oxide films by low-temperature annealing for improved silicon surface passivation

Thermally stable MoOx hole selective contact with Al2O3 interlayer for industrial size silicon solar cells

Oxygen Annealing Behavior in Multicrystalline Silicon

MoOx Hole Collection Layer for A-Si: H Based Photovoltaic Cells

Molybdenum oxide hole selective transport layer by hot wire oxidation-sublimation deposition for silicon heterojunction solar cells

Performance analysis of c-Si heterojunction solar cell with passivated transition metal oxides carrier-selective contacts

Tuning oxygen vacancies in vanadium-doped molybdenum oxide for silicon solar cells with hole selective contact

Simulation of High Efficiency Silicon Heterojunction Solar Cells with Molybdenum Oxide Carrier Selective Layer

Solution-processed vanadium oxide by low-temperature annealing for silicon solar cells with hole selective contact

Tunable Hole Selective Transport by Solution‐processed MoO3‐x Via Doping for p‐Type Crystalline Silicon Solar Cells

Annealing-Insensitive, Alcohol-Processed MoO x Hole Transport Layer for Universally Enabling High-Performance Conventional and Inverted Organic Solar Cells

Silicon solar cell with tunneling oxide on sulfur‐deficient intrinsic MoS2 thin film

Asymmetric TMO–Metal–TMO Structure for Enhanced Efficiency and Long-Term Stability of Si-Based Heterojunction Solar Cells

The Effect of Thermal Annealing of Mo Film on the CuInSe2 Layer Texture and Device Performance

Temperature dependence mechanism of high-temperature oxidation of transition metal silicide MoSi2

Atomic-Layer-Deposited H:MoO x Function Layer as Efficient Hole Selective Passivating Contact in Silicon Solar Cells

Undoped MoO X with Oxygen-rich Vacancies as Hole Transport Material for Efficient Indoor/Outdoor Organic Solar Cells

Effects of annealing temperature and atmosphere on performances of Zn0.9Mg0.1O buffer layers for CIGS solar cell