Abstract:A high recombination rate and high thermal budget for aluminum (Al) back surface field are found in the industrial p-type silicon solar cells. Direct metallization on lightly doped p-type silicon, however, exhibits a large Schottky barrier for the holes on the silicon surface because of Fermi-level pinning effect. As a result, low-temperature-deposited, dopant-free chromium trioxide (CrO x, x < 3) with high stability and high performance is first applied in a p-type silicon solar cell as a hole-selective contact at the rear surface. By using 4 nm CrO x between the p-type silicon and Ag, we achieve a reduction of the contact resistivity for the contact of Ag directly on p-type silicon. For further improvement, we utilize a CrO x (2 nm)/Ag (30 nm)/CrO x (2 nm) multilayer film on the contact between Ag and p-type crystalline silicon (c-Si) to achieve a lower contact resistance (40 mΩ·cm2). The low-resistivity Ohmic contact is attributed to the high work function of the uniform CrO x film and the depinning of the Fermi level of the SiO x layer at the silicon interface. Implementing the advanced hole-selective contacts with CrO x/Ag/CrO x on the p-type silicon solar cell results in a power conversion efficiency of 20.3%, which is 0.1% higher than that of the cell utilizing 4 nm CrO x. Compared with the commercialized p-type solar cell, the novel CrO x-based hole-selective transport material opens up a new possibility for c-Si solar cells using high-efficiency, low-temperature, and dopant-free deposition techniques.

Tunable Hole Selective Transport by Solution‐processed MoO3‐x Via Doping for p‐Type Crystalline Silicon Solar Cells

Tuning oxygen vacancies in vanadium-doped molybdenum oxide for silicon solar cells with hole selective contact

Solution-processed tungsten oxide with Ta5+ doping enhances the hole selective transport for crystalline silicon solar cells

Tunable work function of molybdenum oxynitride for electron-selective contact in crystalline silicon solar cells

Solution-processed vanadium oxide by low-temperature annealing for silicon solar cells with hole selective contact

Exceptional Hole‐Selective Properties of Ta 2 O 5 Films via Sn 4+ Doping for High Performance Silicon Heterojunction Solar Cells

Exceptional Hole-Selective Properties of Ta2O5 Films Via Sn4+ Doping for High Performance Silicon Heterojunction Solar Cells

Investigation in Feasibility of Molybdenum As A Back Contact Layer for Silicon Based Quantum Dot Solar Cells

Atomic-Layer-Deposited H:MoO x Function Layer as Efficient Hole Selective Passivating Contact in Silicon Solar Cells

Low Oxygen Content MoOx and SiOx Tunnel Layer Based Heterocontacts for Efficient and Stable Crystalline Silicon Solar Cells Approaching 22% Efficiency

Modulation of the TCO/MoO x Front Contact Enables >21% High-Efficiency Dopant-Free Silicon Solar Cells

Sn‐doped Nb2O5 films as effective hole‐selective passivating contacts for crystalline silicon solar cells

Performance analysis of c-Si heterojunction solar cell with passivated transition metal oxides carrier-selective contacts

Improved V 2 O X Passivating Contact for p ‐Type Crystalline Silicon Solar Cells by Oxygen Vacancy Modulation with a SiO X Tunnel Layer

Chromium Trioxide Hole-Selective Heterocontacts for Silicon Solar Cells

Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer

Molybdenum oxide hole selective transport layer by hot wire oxidation-sublimation deposition for silicon heterojunction solar cells

Crystalline Silicon Heterojunction Solar Cells with Metal Oxide Window Layers

Solution-processed molybdenum oxide films by low-temperature annealing for improved silicon surface passivation

Heterojunction solar cells with asymmetrically carrier-selective contact structure of molybdenum-oxide/silicon/magnesium-oxide

Numerical investigation of energy level strategy for TMO/Si tunneling heterojunction solar cells